TWI907573B - 氮化物半導體紫外線發光元件及其製造方法 - Google Patents

氮化物半導體紫外線發光元件及其製造方法

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Publication number
TWI907573B
TWI907573B TW110144622A TW110144622A TWI907573B TW I907573 B TWI907573 B TW I907573B TW 110144622 A TW110144622 A TW 110144622A TW 110144622 A TW110144622 A TW 110144622A TW I907573 B TWI907573 B TW I907573B
Authority
TW
Taiwan
Prior art keywords
aforementioned
layer
algan
region
molar fraction
Prior art date
Application number
TW110144622A
Other languages
English (en)
Chinese (zh)
Other versions
TW202240932A (zh
Inventor
平野光
長澤陽祐
Original Assignee
日商日機裝股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日機裝股份有限公司 filed Critical 日商日機裝股份有限公司
Publication of TW202240932A publication Critical patent/TW202240932A/zh
Application granted granted Critical
Publication of TWI907573B publication Critical patent/TWI907573B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
TW110144622A 2021-04-14 2021-11-30 氮化物半導體紫外線發光元件及其製造方法 TWI907573B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2021/015380 2021-04-14
PCT/JP2021/015380 WO2022219731A1 (ja) 2021-04-14 2021-04-14 窒化物半導体紫外線発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
TW202240932A TW202240932A (zh) 2022-10-16
TWI907573B true TWI907573B (zh) 2025-12-11

Family

ID=83639883

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110144622A TWI907573B (zh) 2021-04-14 2021-11-30 氮化物半導體紫外線發光元件及其製造方法

Country Status (3)

Country Link
JP (1) JP7680529B2 (https=)
TW (1) TWI907573B (https=)
WO (1) WO2022219731A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200802969A (en) * 2006-02-09 2008-01-01 Rohm Co Ltd Nitride semiconductor element
JP2015079844A (ja) * 2013-10-17 2015-04-23 日亜化学工業株式会社 窒化物半導体積層体及びそれを用いた発光素子
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200802969A (en) * 2006-02-09 2008-01-01 Rohm Co Ltd Nitride semiconductor element
JP2015079844A (ja) * 2013-10-17 2015-04-23 日亜化学工業株式会社 窒化物半導体積層体及びそれを用いた発光素子
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
JPWO2019159265A1 (ja) 2018-02-14 2020-02-27 創光科学株式会社 窒化物半導体紫外線発光素子

Also Published As

Publication number Publication date
JP7680529B2 (ja) 2025-05-20
TW202240932A (zh) 2022-10-16
WO2022219731A1 (ja) 2022-10-20
JPWO2022219731A1 (https=) 2022-10-20

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