JPWO2022009306A5 - - Google Patents
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- JPWO2022009306A5 JPWO2022009306A5 JP2022534531A JP2022534531A JPWO2022009306A5 JP WO2022009306 A5 JPWO2022009306 A5 JP WO2022009306A5 JP 2022534531 A JP2022534531 A JP 2022534531A JP 2022534531 A JP2022534531 A JP 2022534531A JP WO2022009306 A5 JPWO2022009306 A5 JP WO2022009306A5
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- JP
- Japan
- Prior art keywords
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims 3
- 239000010980 sapphire Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 210000000746 body region Anatomy 0.000 description 7
- 238000005253 cladding Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/026558 WO2022009306A1 (ja) | 2020-07-07 | 2020-07-07 | 窒化物半導体紫外線発光素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022009306A1 JPWO2022009306A1 (https=) | 2022-01-13 |
| JPWO2022009306A5 true JPWO2022009306A5 (https=) | 2023-02-22 |
| JP7462047B2 JP7462047B2 (ja) | 2024-04-04 |
Family
ID=79552315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022534531A Active JP7462047B2 (ja) | 2020-07-07 | 2020-07-07 | 窒化物半導体紫外線発光素子及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12328974B2 (https=) |
| JP (1) | JP7462047B2 (https=) |
| CN (1) | CN115868033B (https=) |
| TW (1) | TWI881114B (https=) |
| WO (1) | WO2022009306A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023203599A1 (ja) * | 2022-04-18 | 2023-10-26 | 日機装株式会社 | 窒化物半導体紫外線発光素子 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016000A (ja) * | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子および窒化物系半導体基板 |
| JP4276020B2 (ja) * | 2003-08-01 | 2009-06-10 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
| JP2006060164A (ja) * | 2004-08-24 | 2006-03-02 | National Institute Of Advanced Industrial & Technology | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 |
| JP5142371B2 (ja) * | 2007-11-15 | 2013-02-13 | 国立大学法人東北大学 | 紫外線窒化物半導体発光素子およびその製造方法 |
| CN101874309B (zh) * | 2008-09-11 | 2013-01-30 | 住友电气工业株式会社 | 氮化物类半导体光元件、用于氮化物类半导体光元件的外延晶片及制造半导体发光元件的方法 |
| JP5409210B2 (ja) * | 2009-09-01 | 2014-02-05 | 学校法人金沢工業大学 | 半導体発光素子 |
| TWI557936B (zh) * | 2010-04-30 | 2016-11-11 | 美國波士頓大學信託會 | 具能帶結構位變動之高效率紫外光發光二極體 |
| US9356192B2 (en) | 2011-08-09 | 2016-05-31 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
| KR101539206B1 (ko) | 2013-04-30 | 2015-07-23 | 소코 가가쿠 가부시키가이샤 | 자외선 발광 장치 |
| WO2015181656A1 (en) * | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | Electronic devices comprising n-type and p-type superlattices |
| US9196788B1 (en) * | 2014-09-08 | 2015-11-24 | Sandia Corporation | High extraction efficiency ultraviolet light-emitting diode |
| JP6408344B2 (ja) * | 2014-11-04 | 2018-10-17 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子 |
| WO2016157518A1 (ja) | 2015-04-03 | 2016-10-06 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置 |
| US10297715B2 (en) | 2015-07-21 | 2019-05-21 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
| CN107924970B (zh) * | 2015-08-03 | 2020-04-03 | 创光科学株式会社 | 氮化物半导体晶圆及其制造方法、以及氮化物半导体紫外线发光元件及装置 |
| US10643849B2 (en) * | 2017-02-15 | 2020-05-05 | Soko Kagaku Co., Ltd. | Manufacturing method of nitride semiconductor ultraviolet light emitting element, and nitride semiconductor ultraviolet light emitting element |
| JP6686172B2 (ja) * | 2017-11-22 | 2020-04-22 | 創光科学株式会社 | 窒化物半導体発光素子 |
| JP6691090B2 (ja) * | 2017-11-28 | 2020-04-28 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
| EP3754732B1 (en) * | 2018-02-14 | 2023-04-12 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
| CN109378371B (zh) * | 2018-10-17 | 2020-10-09 | 湘能华磊光电股份有限公司 | Led外延片生长方法 |
| JP7146589B2 (ja) * | 2018-11-15 | 2022-10-04 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| CN113169255B (zh) * | 2018-12-14 | 2025-05-16 | 同和电子科技有限公司 | Iii族氮化物半导体发光元件及其制造方法 |
-
2020
- 2020-07-07 CN CN202080102781.9A patent/CN115868033B/zh active Active
- 2020-07-07 WO PCT/JP2020/026558 patent/WO2022009306A1/ja not_active Ceased
- 2020-07-07 JP JP2022534531A patent/JP7462047B2/ja active Active
- 2020-07-07 US US18/010,393 patent/US12328974B2/en active Active
-
2021
- 2021-04-20 TW TW110114068A patent/TWI881114B/zh active
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