CN115868033B - 氮化物半导体紫外线发光元件及其制造方法 - Google Patents

氮化物半导体紫外线发光元件及其制造方法 Download PDF

Info

Publication number
CN115868033B
CN115868033B CN202080102781.9A CN202080102781A CN115868033B CN 115868033 B CN115868033 B CN 115868033B CN 202080102781 A CN202080102781 A CN 202080102781A CN 115868033 B CN115868033 B CN 115868033B
Authority
CN
China
Prior art keywords
region
layer
algan
type
mole fraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080102781.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN115868033A (zh
Inventor
平野光
长泽阳祐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikkiso Co Ltd
Original Assignee
Nikkiso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikkiso Co Ltd filed Critical Nikkiso Co Ltd
Publication of CN115868033A publication Critical patent/CN115868033A/zh
Application granted granted Critical
Publication of CN115868033B publication Critical patent/CN115868033B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
CN202080102781.9A 2020-07-07 2020-07-07 氮化物半导体紫外线发光元件及其制造方法 Active CN115868033B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/026558 WO2022009306A1 (ja) 2020-07-07 2020-07-07 窒化物半導体紫外線発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
CN115868033A CN115868033A (zh) 2023-03-28
CN115868033B true CN115868033B (zh) 2025-05-16

Family

ID=79552315

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080102781.9A Active CN115868033B (zh) 2020-07-07 2020-07-07 氮化物半导体紫外线发光元件及其制造方法

Country Status (5)

Country Link
US (1) US12328974B2 (https=)
JP (1) JP7462047B2 (https=)
CN (1) CN115868033B (https=)
TW (1) TWI881114B (https=)
WO (1) WO2022009306A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101874309A (zh) * 2008-09-11 2010-10-27 住友电气工业株式会社 氮化物类半导体光元件、用于氮化物类半导体光元件的外延晶片及制造半导体发光元件的方法
CN109378371A (zh) * 2018-10-17 2019-02-22 湘能华磊光电股份有限公司 Led外延片生长方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016000A (ja) * 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子および窒化物系半導体基板
JP4276020B2 (ja) * 2003-08-01 2009-06-10 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
JP2006060164A (ja) * 2004-08-24 2006-03-02 National Institute Of Advanced Industrial & Technology 窒化物半導体デバイスおよび窒化物半導体結晶成長方法
JP5142371B2 (ja) * 2007-11-15 2013-02-13 国立大学法人東北大学 紫外線窒化物半導体発光素子およびその製造方法
JP5409210B2 (ja) 2009-09-01 2014-02-05 学校法人金沢工業大学 半導体発光素子
WO2012012010A2 (en) * 2010-04-30 2012-01-26 Trustees Of Boston University High efficiency ultraviolet light emitting diode with band structure potential fluctuations
KR20140043161A (ko) 2011-08-09 2014-04-08 소코 가가쿠 가부시키가이샤 질화물 반도체 자외선 발광 소자
WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
CN106415854B (zh) * 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 包括n型和p型超晶格的电子装置
US9196788B1 (en) 2014-09-08 2015-11-24 Sandia Corporation High extraction efficiency ultraviolet light-emitting diode
JP6408344B2 (ja) * 2014-11-04 2018-10-17 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
EP3293774B1 (en) * 2015-07-21 2020-03-18 Soko Kagaku Co., Ltd. Nitride semiconductor ultraviolet light-emitting element
JP6440846B2 (ja) * 2015-08-03 2018-12-19 創光科学株式会社 窒化物半導体ウェハ及びその製造方法、並びに、窒化物半導体紫外線発光素子及び装置
JP6560821B2 (ja) * 2017-02-15 2019-08-14 創光科学株式会社 窒化物半導体紫外線発光素子の製造方法及び窒化物半導体紫外線発光素子
WO2019102557A1 (ja) * 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
JP6691090B2 (ja) * 2017-11-28 2020-04-28 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
JP7146589B2 (ja) * 2018-11-15 2022-10-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
CN113169255B (zh) * 2018-12-14 2025-05-16 同和电子科技有限公司 Iii族氮化物半导体发光元件及其制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101874309A (zh) * 2008-09-11 2010-10-27 住友电气工业株式会社 氮化物类半导体光元件、用于氮化物类半导体光元件的外延晶片及制造半导体发光元件的方法
CN109378371A (zh) * 2018-10-17 2019-02-22 湘能华磊光电股份有限公司 Led外延片生长方法

Also Published As

Publication number Publication date
TWI881114B (zh) 2025-04-21
US12328974B2 (en) 2025-06-10
US20230299232A1 (en) 2023-09-21
CN115868033A (zh) 2023-03-28
TW202218186A (zh) 2022-05-01
JP7462047B2 (ja) 2024-04-04
WO2022009306A1 (ja) 2022-01-13
JPWO2022009306A1 (https=) 2022-01-13

Similar Documents

Publication Publication Date Title
JP5559814B2 (ja) 窒化物系半導体発光ダイオードおよびその製造方法
TW202023066A (zh) Iii族氮化物半導體發光元件及其製造方法
CN115699340B (zh) 氮化物半导体紫外线发光元件及其制造方法
CN116114073B (zh) 氮化物半导体紫外线发光元件
CN115699341B (zh) 氮化物半导体紫外线发光元件
CN115868033B (zh) 氮化物半导体紫外线发光元件及其制造方法
US12419142B2 (en) Nitride semiconductor ultraviolet light emitting element
KR102865808B1 (ko) 발광 다이오드 및 제조 방법
JP7614449B2 (ja) 窒化物半導体紫外線発光素子
TWI907573B (zh) 氮化物半導體紫外線發光元件及其製造方法
US8748899B2 (en) Nitride-based semiconductor device and method for fabricating the same
TW202218178A (zh) 氮化物半導體紫外線發光元件
WO2022149183A1 (ja) 窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20230420

Address after: Tokyo, Japan

Applicant after: NIKKISO Co.,Ltd.

Address before: Ishikawa County, Japan

Applicant before: SOKO KAGAKU Co.,Ltd.

GR01 Patent grant
GR01 Patent grant