JP7462047B2 - 窒化物半導体紫外線発光素子及びその製造方法 - Google Patents

窒化物半導体紫外線発光素子及びその製造方法 Download PDF

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JP7462047B2
JP7462047B2 JP2022534531A JP2022534531A JP7462047B2 JP 7462047 B2 JP7462047 B2 JP 7462047B2 JP 2022534531 A JP2022534531 A JP 2022534531A JP 2022534531 A JP2022534531 A JP 2022534531A JP 7462047 B2 JP7462047 B2 JP 7462047B2
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JPWO2022009306A5 (https=
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光 平野
陽祐 長澤
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Nikkiso Co Ltd
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Nikkiso Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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JP2022534531A 2020-07-07 2020-07-07 窒化物半導体紫外線発光素子及びその製造方法 Active JP7462047B2 (ja)

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PCT/JP2020/026558 WO2022009306A1 (ja) 2020-07-07 2020-07-07 窒化物半導体紫外線発光素子及びその製造方法

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JPWO2022009306A5 JPWO2022009306A5 (https=) 2023-02-22
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JP (1) JP7462047B2 (https=)
CN (1) CN115868033B (https=)
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WO (1) WO2022009306A1 (https=)

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WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子

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JP2011054717A (ja) 2009-09-01 2011-03-17 Kanazawa Inst Of Technology 半導体発光素子
WO2013021464A1 (ja) 2011-08-09 2013-02-14 創光科学株式会社 窒化物半導体紫外線発光素子
US20140103289A1 (en) 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2017013729A1 (ja) 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
WO2019102557A1 (ja) 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
JP2019102470A (ja) 2017-11-28 2019-06-24 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
JP2020087964A (ja) 2018-11-15 2020-06-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP2020098908A (ja) 2018-12-14 2020-06-25 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法

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JP2002016000A (ja) * 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子および窒化物系半導体基板
JP4276020B2 (ja) * 2003-08-01 2009-06-10 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
JP2006060164A (ja) * 2004-08-24 2006-03-02 National Institute Of Advanced Industrial & Technology 窒化物半導体デバイスおよび窒化物半導体結晶成長方法
EP2323180A1 (en) * 2008-09-11 2011-05-18 Sumitomo Electric Industries, Ltd. Nitride semiconductor optical device, epitaxial wafer for nitride semiconductor optical device, and method for manufacturing semiconductor light-emitting device
WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
CN106415854B (zh) * 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 包括n型和p型超晶格的电子装置
US9196788B1 (en) 2014-09-08 2015-11-24 Sandia Corporation High extraction efficiency ultraviolet light-emitting diode
JP6408344B2 (ja) * 2014-11-04 2018-10-17 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
JP6440846B2 (ja) * 2015-08-03 2018-12-19 創光科学株式会社 窒化物半導体ウェハ及びその製造方法、並びに、窒化物半導体紫外線発光素子及び装置
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JP2009123969A (ja) 2007-11-15 2009-06-04 Tohoku Univ 紫外線窒化物半導体発光素子およびその製造方法
JP2011054717A (ja) 2009-09-01 2011-03-17 Kanazawa Inst Of Technology 半導体発光素子
US20140103289A1 (en) 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2013021464A1 (ja) 2011-08-09 2013-02-14 創光科学株式会社 窒化物半導体紫外線発光素子
WO2017013729A1 (ja) 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
WO2019102557A1 (ja) 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
JP2019102470A (ja) 2017-11-28 2019-06-24 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
JP2020087964A (ja) 2018-11-15 2020-06-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP2020098908A (ja) 2018-12-14 2020-06-25 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法

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NAGASAWA et al.，Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs gro，Applied Physics Express，日本，The Japan Society of Applied Physics，2019年06月，Vol.12，064009
NAGASAWA, Yosuke et al.，Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based，Jouanal of Applied Physics，米国，AIP Publishing，2019年12月03日，Vol.126，215703

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TWI881114B (zh) 2025-04-21
US12328974B2 (en) 2025-06-10
US20230299232A1 (en) 2023-09-21
CN115868033A (zh) 2023-03-28
TW202218186A (zh) 2022-05-01
WO2022009306A1 (ja) 2022-01-13
CN115868033B (zh) 2025-05-16
JPWO2022009306A1 (https=) 2022-01-13

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