JPWO2022009306A1 - - Google Patents
Info
- Publication number
- JPWO2022009306A1 JPWO2022009306A1 JP2022534531A JP2022534531A JPWO2022009306A1 JP WO2022009306 A1 JPWO2022009306 A1 JP WO2022009306A1 JP 2022534531 A JP2022534531 A JP 2022534531A JP 2022534531 A JP2022534531 A JP 2022534531A JP WO2022009306 A1 JPWO2022009306 A1 JP WO2022009306A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/026558 WO2022009306A1 (ja) | 2020-07-07 | 2020-07-07 | 窒化物半導体紫外線発光素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022009306A1 true JPWO2022009306A1 (https=) | 2022-01-13 |
| JPWO2022009306A5 JPWO2022009306A5 (https=) | 2023-02-22 |
| JP7462047B2 JP7462047B2 (ja) | 2024-04-04 |
Family
ID=79552315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022534531A Active JP7462047B2 (ja) | 2020-07-07 | 2020-07-07 | 窒化物半導体紫外線発光素子及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12328974B2 (https=) |
| JP (1) | JP7462047B2 (https=) |
| CN (1) | CN115868033B (https=) |
| TW (1) | TWI881114B (https=) |
| WO (1) | WO2022009306A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023203599A1 (ja) * | 2022-04-18 | 2023-10-26 | 日機装株式会社 | 窒化物半導体紫外線発光素子 |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009123969A (ja) * | 2007-11-15 | 2009-06-04 | Tohoku Univ | 紫外線窒化物半導体発光素子およびその製造方法 |
| JP2011054717A (ja) * | 2009-09-01 | 2011-03-17 | Kanazawa Inst Of Technology | 半導体発光素子 |
| WO2013021464A1 (ja) * | 2011-08-09 | 2013-02-14 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| US20140103289A1 (en) * | 2010-04-30 | 2014-04-17 | Yitao Liao | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
| US9196788B1 (en) * | 2014-09-08 | 2015-11-24 | Sandia Corporation | High extraction efficiency ultraviolet light-emitting diode |
| WO2017013729A1 (ja) * | 2015-07-21 | 2017-01-26 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| WO2019102557A1 (ja) * | 2017-11-22 | 2019-05-31 | 創光科学株式会社 | 窒化物半導体発光素子 |
| JP2019102470A (ja) * | 2017-11-28 | 2019-06-24 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
| WO2019159265A1 (ja) * | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| JP2020087964A (ja) * | 2018-11-15 | 2020-06-04 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP2020098908A (ja) * | 2018-12-14 | 2020-06-25 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体発光素子及びその製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002016000A (ja) * | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子および窒化物系半導体基板 |
| JP4276020B2 (ja) * | 2003-08-01 | 2009-06-10 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法 |
| JP2006060164A (ja) * | 2004-08-24 | 2006-03-02 | National Institute Of Advanced Industrial & Technology | 窒化物半導体デバイスおよび窒化物半導体結晶成長方法 |
| EP2323180A1 (en) * | 2008-09-11 | 2011-05-18 | Sumitomo Electric Industries, Ltd. | Nitride semiconductor optical device, epitaxial wafer for nitride semiconductor optical device, and method for manufacturing semiconductor light-emitting device |
| WO2014178288A1 (ja) | 2013-04-30 | 2014-11-06 | 創光科学株式会社 | 紫外線発光装置 |
| CN106415854B (zh) * | 2014-05-27 | 2019-10-01 | 斯兰纳Uv科技有限公司 | 包括n型和p型超晶格的电子装置 |
| JP6408344B2 (ja) * | 2014-11-04 | 2018-10-17 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子 |
| WO2016157518A1 (ja) | 2015-04-03 | 2016-10-06 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置 |
| JP6440846B2 (ja) * | 2015-08-03 | 2018-12-19 | 創光科学株式会社 | 窒化物半導体ウェハ及びその製造方法、並びに、窒化物半導体紫外線発光素子及び装置 |
| JP6560821B2 (ja) * | 2017-02-15 | 2019-08-14 | 創光科学株式会社 | 窒化物半導体紫外線発光素子の製造方法及び窒化物半導体紫外線発光素子 |
| CN109378371B (zh) * | 2018-10-17 | 2020-10-09 | 湘能华磊光电股份有限公司 | Led外延片生长方法 |
-
2020
- 2020-07-07 WO PCT/JP2020/026558 patent/WO2022009306A1/ja not_active Ceased
- 2020-07-07 US US18/010,393 patent/US12328974B2/en active Active
- 2020-07-07 JP JP2022534531A patent/JP7462047B2/ja active Active
- 2020-07-07 CN CN202080102781.9A patent/CN115868033B/zh active Active
-
2021
- 2021-04-20 TW TW110114068A patent/TWI881114B/zh active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009123969A (ja) * | 2007-11-15 | 2009-06-04 | Tohoku Univ | 紫外線窒化物半導体発光素子およびその製造方法 |
| JP2011054717A (ja) * | 2009-09-01 | 2011-03-17 | Kanazawa Inst Of Technology | 半導体発光素子 |
| US20140103289A1 (en) * | 2010-04-30 | 2014-04-17 | Yitao Liao | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
| WO2013021464A1 (ja) * | 2011-08-09 | 2013-02-14 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| US9196788B1 (en) * | 2014-09-08 | 2015-11-24 | Sandia Corporation | High extraction efficiency ultraviolet light-emitting diode |
| WO2017013729A1 (ja) * | 2015-07-21 | 2017-01-26 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| WO2019102557A1 (ja) * | 2017-11-22 | 2019-05-31 | 創光科学株式会社 | 窒化物半導体発光素子 |
| JP2019102470A (ja) * | 2017-11-28 | 2019-06-24 | 日機装株式会社 | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 |
| WO2019159265A1 (ja) * | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| JP2020087964A (ja) * | 2018-11-15 | 2020-06-04 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP2020098908A (ja) * | 2018-12-14 | 2020-06-25 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｉｉ族窒化物半導体発光素子及びその製造方法 |
Non-Patent Citations (3)
| Title |
|---|
| KOJIMA, K. ET AL.: "Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an A", APPLIED PHYSICS LETTERS, vol. 114, JPN7020002979, 7 January 2019 (2019-01-07), US, pages 011102, ISSN: 0005146366 * |
| NAGASAWA ET AL.: "Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs gro", APPLIED PHYSICS EXPRESS, vol. 12, JPN6020036158, June 2019 (2019-06-01), JP, pages 064009, ISSN: 0005286308 * |
| NAGASAWA, YOSUKE ET AL.: "Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based", JOUANAL OF APPLIED PHYSICS, vol. 126, JPN7020002980, 3 December 2019 (2019-12-03), US, pages 215703, ISSN: 0005286309 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI881114B (zh) | 2025-04-21 |
| US12328974B2 (en) | 2025-06-10 |
| US20230299232A1 (en) | 2023-09-21 |
| CN115868033A (zh) | 2023-03-28 |
| TW202218186A (zh) | 2022-05-01 |
| JP7462047B2 (ja) | 2024-04-04 |
| WO2022009306A1 (ja) | 2022-01-13 |
| CN115868033B (zh) | 2025-05-16 |
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