TWI881114B - 氮化物半導體紫外線發光元件及其製造方法 - Google Patents

氮化物半導體紫外線發光元件及其製造方法 Download PDF

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TWI881114B
TWI881114B TW110114068A TW110114068A TWI881114B TW I881114 B TWI881114 B TW I881114B TW 110114068 A TW110114068 A TW 110114068A TW 110114068 A TW110114068 A TW 110114068A TW I881114 B TWI881114 B TW I881114B
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TW110114068A
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TW202218186A (zh
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平野光
長澤陽祐
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日商日機裝股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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TW110114068A 2020-07-07 2021-04-20 氮化物半導體紫外線發光元件及其製造方法 TWI881114B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2020/026558 2020-07-07
PCT/JP2020/026558 WO2022009306A1 (ja) 2020-07-07 2020-07-07 窒化物半導体紫外線発光素子及びその製造方法

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TW202218186A TW202218186A (zh) 2022-05-01
TWI881114B true TWI881114B (zh) 2025-04-21

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US (1) US12328974B2 (https=)
JP (1) JP7462047B2 (https=)
CN (1) CN115868033B (https=)
TW (1) TWI881114B (https=)
WO (1) WO2022009306A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子

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JP2006060164A (ja) * 2004-08-24 2006-03-02 National Institute Of Advanced Industrial & Technology 窒化物半導体デバイスおよび窒化物半導体結晶成長方法
TW201603264A (zh) * 2014-05-27 2016-01-16 西拉娜集團私人有限公司 包括ｎ型及ｐ型超晶格之電子裝置
JP2016088803A (ja) * 2014-11-04 2016-05-23 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子
TW201637237A (zh) * 2015-04-03 2016-10-16 創光科學股份有限公司 氮化物半導體紫外線發光元件及氮化物半導體紫外線發光裝置
WO2017013729A1 (ja) * 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
TW201719934A (zh) * 2015-08-03 2017-06-01 創光科學股份有限公司 氮化物半導體晶圓及其製造方法、及氮化物半導體紫外線發光元件及裝置
TW201836169A (zh) * 2017-02-15 2018-10-01 日商創光科學股份有限公司 氮化物半導體紫外線發光元件的製造方法及氮化物半導體紫外線發光元件
WO2019102557A1 (ja) * 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
TW201935707A (zh) * 2018-02-14 2019-09-01 日商創光科學股份有限公司 氮化物半導體紫外線發光元件

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JP5142371B2 (ja) * 2007-11-15 2013-02-13 国立大学法人東北大学 紫外線窒化物半導体発光素子およびその製造方法
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WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
US9196788B1 (en) 2014-09-08 2015-11-24 Sandia Corporation High extraction efficiency ultraviolet light-emitting diode
JP6691090B2 (ja) * 2017-11-28 2020-04-28 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
CN109378371B (zh) * 2018-10-17 2020-10-09 湘能华磊光电股份有限公司 Led外延片生长方法
JP7146589B2 (ja) * 2018-11-15 2022-10-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016000A (ja) * 2000-06-27 2002-01-18 Sanyo Electric Co Ltd 窒化物系半導体素子および窒化物系半導体基板
JP2006060164A (ja) * 2004-08-24 2006-03-02 National Institute Of Advanced Industrial & Technology 窒化物半導体デバイスおよび窒化物半導体結晶成長方法
TW201603264A (zh) * 2014-05-27 2016-01-16 西拉娜集團私人有限公司 包括ｎ型及ｐ型超晶格之電子裝置
JP2016088803A (ja) * 2014-11-04 2016-05-23 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板およびその製造方法、ならびにｉｉｉ族窒化物半導体発光素子
TW201637237A (zh) * 2015-04-03 2016-10-16 創光科學股份有限公司 氮化物半導體紫外線發光元件及氮化物半導體紫外線發光裝置
WO2017013729A1 (ja) * 2015-07-21 2017-01-26 創光科学株式会社 窒化物半導体紫外線発光素子
TW201719934A (zh) * 2015-08-03 2017-06-01 創光科學股份有限公司 氮化物半導體晶圓及其製造方法、及氮化物半導體紫外線發光元件及裝置
TW201836169A (zh) * 2017-02-15 2018-10-01 日商創光科學股份有限公司 氮化物半導體紫外線發光元件的製造方法及氮化物半導體紫外線發光元件
WO2019102557A1 (ja) * 2017-11-22 2019-05-31 創光科学株式会社 窒化物半導体発光素子
TW201935707A (zh) * 2018-02-14 2019-09-01 日商創光科學股份有限公司 氮化物半導體紫外線發光元件

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Publication number Publication date
US12328974B2 (en) 2025-06-10
US20230299232A1 (en) 2023-09-21
CN115868033A (zh) 2023-03-28
TW202218186A (zh) 2022-05-01
JP7462047B2 (ja) 2024-04-04
WO2022009306A1 (ja) 2022-01-13
CN115868033B (zh) 2025-05-16
JPWO2022009306A1 (https=) 2022-01-13

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