JPWO2022091173A5 - - Google Patents
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- JPWO2022091173A5 JPWO2022091173A5 JP2022558606A JP2022558606A JPWO2022091173A5 JP WO2022091173 A5 JPWO2022091173 A5 JP WO2022091173A5 JP 2022558606 A JP2022558606 A JP 2022558606A JP 2022558606 A JP2022558606 A JP 2022558606A JP WO2022091173 A5 JPWO2022091173 A5 JP WO2022091173A5
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Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/040069 WO2022091173A1 (ja) | 2020-10-26 | 2020-10-26 | 窒化物半導体紫外線発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022091173A1 JPWO2022091173A1 (https=) | 2022-05-05 |
| JPWO2022091173A5 true JPWO2022091173A5 (https=) | 2023-10-10 |
| JP7561205B2 JP7561205B2 (ja) | 2024-10-03 |
Family
ID=81383745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022558606A Active JP7561205B2 (ja) | 2020-10-26 | 2020-10-26 | 窒化物半導体紫外線発光素子 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7561205B2 (https=) |
| TW (1) | TWI907463B (https=) |
| WO (1) | WO2022091173A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100906164B1 (ko) * | 2004-11-18 | 2009-07-03 | 쇼와 덴코 가부시키가이샤 | 질화갈륨계 반도체 적층구조체, 그 제조방법, 질화갈륨계반도체 소자 및 그 소자를 사용한 램프 |
| WO2012012010A2 (en) | 2010-04-30 | 2012-01-26 | Trustees Of Boston University | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
| KR20140043161A (ko) * | 2011-08-09 | 2014-04-08 | 소코 가가쿠 가부시키가이샤 | 질화물 반도체 자외선 발광 소자 |
| US9252329B2 (en) * | 2011-10-04 | 2016-02-02 | Palo Alto Research Center Incorporated | Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction |
| WO2019159265A1 (ja) * | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| JP7312056B2 (ja) | 2019-01-07 | 2023-07-20 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP6793863B2 (ja) | 2019-01-22 | 2020-12-02 | Ｄｏｗａエレクトロニクス株式会社 | 深紫外発光素子用の反射電極の製造方法、深紫外発光素子の製造方法および深紫外発光素子 |
-
2020
- 2020-10-26 JP JP2022558606A patent/JP7561205B2/ja active Active
- 2020-10-26 WO PCT/JP2020/040069 patent/WO2022091173A1/ja not_active Ceased
-
2021
- 2021-07-20 TW TW110126567A patent/TWI907463B/zh active
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