JPWO2022091173A1 - - Google Patents
Info
- Publication number
- JPWO2022091173A1 JPWO2022091173A1 JP2022558606A JP2022558606A JPWO2022091173A1 JP WO2022091173 A1 JPWO2022091173 A1 JP WO2022091173A1 JP 2022558606 A JP2022558606 A JP 2022558606A JP 2022558606 A JP2022558606 A JP 2022558606A JP WO2022091173 A1 JPWO2022091173 A1 JP WO2022091173A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/040069 WO2022091173A1 (ja) | 2020-10-26 | 2020-10-26 | 窒化物半導体紫外線発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022091173A1 true JPWO2022091173A1 (https=) | 2022-05-05 |
| JPWO2022091173A5 JPWO2022091173A5 (https=) | 2023-10-10 |
| JP7561205B2 JP7561205B2 (ja) | 2024-10-03 |
Family
ID=81383745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022558606A Active JP7561205B2 (ja) | 2020-10-26 | 2020-10-26 | 窒化物半導体紫外線発光素子 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7561205B2 (https=) |
| TW (1) | TWI907463B (https=) |
| WO (1) | WO2022091173A1 (https=) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140103289A1 (en) * | 2010-04-30 | 2014-04-17 | Yitao Liao | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
| WO2019159265A1 (ja) * | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| JP2020113741A (ja) * | 2019-01-07 | 2020-07-27 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP2020120114A (ja) * | 2019-01-22 | 2020-08-06 | Ｄｏｗａエレクトロニクス株式会社 | 深紫外発光素子用の反射電極の製造方法、深紫外発光素子の製造方法および深紫外発光素子 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100906164B1 (ko) * | 2004-11-18 | 2009-07-03 | 쇼와 덴코 가부시키가이샤 | 질화갈륨계 반도체 적층구조체, 그 제조방법, 질화갈륨계반도체 소자 및 그 소자를 사용한 램프 |
| KR20140043161A (ko) * | 2011-08-09 | 2014-04-08 | 소코 가가쿠 가부시키가이샤 | 질화물 반도체 자외선 발광 소자 |
| US9252329B2 (en) * | 2011-10-04 | 2016-02-02 | Palo Alto Research Center Incorporated | Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction |
-
2020
- 2020-10-26 JP JP2022558606A patent/JP7561205B2/ja active Active
- 2020-10-26 WO PCT/JP2020/040069 patent/WO2022091173A1/ja not_active Ceased
-
2021
- 2021-07-20 TW TW110126567A patent/TWI907463B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140103289A1 (en) * | 2010-04-30 | 2014-04-17 | Yitao Liao | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
| WO2019159265A1 (ja) * | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
| JP2020113741A (ja) * | 2019-01-07 | 2020-07-27 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
| JP2020120114A (ja) * | 2019-01-22 | 2020-08-06 | Ｄｏｗａエレクトロニクス株式会社 | 深紫外発光素子用の反射電極の製造方法、深紫外発光素子の製造方法および深紫外発光素子 |
Non-Patent Citations (3)
| Title |
|---|
| KOJIMA, K. ET AL.: "Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an A", APPLIED PHYSICS LETTERS, vol. 114, JPN7021000017, 7 January 2019 (2019-01-07), pages 011102, ISSN: 0005344582 * |
| NAGASAWA, YOSUKE ET AL.: "Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs gro", APPLIED PHYSICS EXPRESS, vol. 12, JPN6021000067, 4 June 2019 (2019-06-04), JP, pages 064009, ISSN: 0005344584 * |
| SHI, HENGZHI ET AL.: "Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically des", OPTICS COMMUNICATIONS, vol. 441, JPN6021000066, 27 February 2019 (2019-02-27), pages 149 - 154, ISSN: 0005344583 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7561205B2 (ja) | 2024-10-03 |
| TWI907463B (zh) | 2025-12-11 |
| WO2022091173A1 (ja) | 2022-05-05 |
| TW202218178A (zh) | 2022-05-01 |
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