TWI907463B - 氮化物半導體紫外線發光元件 - Google Patents

氮化物半導體紫外線發光元件

Info

Publication number
TWI907463B
TWI907463B TW110126567A TW110126567A TWI907463B TW I907463 B TWI907463 B TW I907463B TW 110126567 A TW110126567 A TW 110126567A TW 110126567 A TW110126567 A TW 110126567A TW I907463 B TWI907463 B TW I907463B
Authority
TW
Taiwan
Prior art keywords
layer
region
type
aforementioned
algan
Prior art date
Application number
TW110126567A
Other languages
English (en)
Chinese (zh)
Other versions
TW202218178A (zh
Inventor
平野光
長澤陽祐
Original Assignee
日商日機裝股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日機裝股份有限公司 filed Critical 日商日機裝股份有限公司
Publication of TW202218178A publication Critical patent/TW202218178A/zh
Application granted granted Critical
Publication of TWI907463B publication Critical patent/TWI907463B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
TW110126567A 2020-10-26 2021-07-20 氮化物半導體紫外線發光元件 TWI907463B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2020/040069 2020-10-26
PCT/JP2020/040069 WO2022091173A1 (ja) 2020-10-26 2020-10-26 窒化物半導体紫外線発光素子

Publications (2)

Publication Number Publication Date
TW202218178A TW202218178A (zh) 2022-05-01
TWI907463B true TWI907463B (zh) 2025-12-11

Family

ID=81383745

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110126567A TWI907463B (zh) 2020-10-26 2021-07-20 氮化物半導體紫外線發光元件

Country Status (3)

Country Link
JP (1) JP7561205B2 (https=)
TW (1) TWI907463B (https=)
WO (1) WO2022091173A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173590A (ja) * 2004-11-18 2006-06-29 Showa Denko Kk 窒化ガリウム系半導体積層構造体、その製造方法、窒化ガリウム系半導体素子及びランプ
TW201308656A (zh) * 2011-08-09 2013-02-16 創光科學股份有限公司 氮化物半導體紫外線發光元件
US10008629B2 (en) * 2011-10-04 2018-06-26 Palo Alto Research Center Incorporated Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
TW201935707A (zh) * 2018-02-14 2019-09-01 日商創光科學股份有限公司 氮化物半導體紫外線發光元件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012012010A2 (en) 2010-04-30 2012-01-26 Trustees Of Boston University High efficiency ultraviolet light emitting diode with band structure potential fluctuations
JP7312056B2 (ja) 2019-01-07 2023-07-20 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP6793863B2 (ja) 2019-01-22 2020-12-02 Ｄｏｗａエレクトロニクス株式会社 深紫外発光素子用の反射電極の製造方法、深紫外発光素子の製造方法および深紫外発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173590A (ja) * 2004-11-18 2006-06-29 Showa Denko Kk 窒化ガリウム系半導体積層構造体、その製造方法、窒化ガリウム系半導体素子及びランプ
TW201308656A (zh) * 2011-08-09 2013-02-16 創光科學股份有限公司 氮化物半導體紫外線發光元件
US10008629B2 (en) * 2011-10-04 2018-06-26 Palo Alto Research Center Incorporated Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
TW201935707A (zh) * 2018-02-14 2019-09-01 日商創光科學股份有限公司 氮化物半導體紫外線發光元件

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
期刊 K. Kojima, et al. Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps Applied Physics Letters Volume 114, Issue 1 AIP Publishing 7 January 2019 011102-1~011102-5 *

Also Published As

Publication number Publication date
JP7561205B2 (ja) 2024-10-03
WO2022091173A1 (ja) 2022-05-05
JPWO2022091173A1 (https=) 2022-05-05
TW202218178A (zh) 2022-05-01

Similar Documents

Publication Publication Date Title
KR101567121B1 (ko) 반도체 광소자 어레이 및 그의 제조방법
US10995403B2 (en) Method of forming aluminum nitride film and method of manufacturing semiconductor light-emitting element
TWI883207B (zh) 氮化物半導體紫外線發光元件
TWI828945B (zh) 氮化物半導體紫外線發光元件
TWI851832B (zh) 氮化物半導體紫外線發光元件及其製造方法
US12446368B2 (en) Nitride semiconductor ultraviolet light-emitting element
TWI907463B (zh) 氮化物半導體紫外線發光元件
US12328974B2 (en) Nitride semiconductor ultraviolet light-emitting element and manufacturing method thereof
TWI907573B (zh) 氮化物半導體紫外線發光元件及其製造方法
TWI914432B (zh) 氮化物半導體紫外線發光元件之製造方法及氮化物半導體紫外線發光元件
JP7672778B2 (ja) 窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子