JP7561205B2 - 窒化物半導体紫外線発光素子 - Google Patents

窒化物半導体紫外線発光素子 Download PDF

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JP7561205B2
JP7561205B2 JP2022558606A JP2022558606A JP7561205B2 JP 7561205 B2 JP7561205 B2 JP 7561205B2 JP 2022558606 A JP2022558606 A JP 2022558606A JP 2022558606 A JP2022558606 A JP 2022558606A JP 7561205 B2 JP7561205 B2 JP 7561205B2
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JPWO2022091173A5 (https=
JPWO2022091173A1 (https=
Inventor
光 平野
陽祐 長澤
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Nikkiso Co Ltd
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Nikkiso Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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JP2022558606A 2020-10-26 2020-10-26 窒化物半導体紫外線発光素子 Active JP7561205B2 (ja)

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PCT/JP2020/040069 WO2022091173A1 (ja) 2020-10-26 2020-10-26 窒化物半導体紫外線発光素子

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JPWO2022091173A1 JPWO2022091173A1 (https=) 2022-05-05
JPWO2022091173A5 JPWO2022091173A5 (https=) 2023-10-10
JP7561205B2 true JP7561205B2 (ja) 2024-10-03

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JP (1) JP7561205B2 (https=)
TW (1) TWI907463B (https=)
WO (1) WO2022091173A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140103289A1 (en) 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
JP2020113741A (ja) 2019-01-07 2020-07-27 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP2020120114A (ja) 2019-01-22 2020-08-06 Ｄｏｗａエレクトロニクス株式会社 深紫外発光素子用の反射電極の製造方法、深紫外発光素子の製造方法および深紫外発光素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100906164B1 (ko) * 2004-11-18 2009-07-03 쇼와 덴코 가부시키가이샤 질화갈륨계 반도체 적층구조체, 그 제조방법, 질화갈륨계반도체 소자 및 그 소자를 사용한 램프
KR20140043161A (ko) * 2011-08-09 2014-04-08 소코 가가쿠 가부시키가이샤 질화물 반도체 자외선 발광 소자
US9252329B2 (en) * 2011-10-04 2016-02-02 Palo Alto Research Center Incorporated Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140103289A1 (en) 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子
JP2020113741A (ja) 2019-01-07 2020-07-27 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP2020120114A (ja) 2019-01-22 2020-08-06 Ｄｏｗａエレクトロニクス株式会社 深紫外発光素子用の反射電極の製造方法、深紫外発光素子の製造方法および深紫外発光素子

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KOJIMA, K. et al.，Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps，Applied Physics Letters，AIP Publishing，2019年01月07日，Vol.114，011102，https://doi.org/10.1063/1.5063735
NAGASAWA, Yosuke et al.，Comparison of AlxGa1-xN multiple quantum wells designed for 265 and 285 nm deep-ultraviolet LEDs grown on AlN templates having macrosteps，Applied Physics Express，日本，The Japan Society of Applied Physics，2019年06月04日，Vol.12，064009，https://doi.org/10.7567/1882-0786/ab21a9
SHI, Hengzhi et al.，Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers，Optics Communications，Vol.441，2019年02月27日，p.149-154，https://doi.org/10.1016/j.optcom.2019.02.054

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TWI907463B (zh) 2025-12-11
WO2022091173A1 (ja) 2022-05-05
JPWO2022091173A1 (https=) 2022-05-05
TW202218178A (zh) 2022-05-01

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