JPWO2023042638A5 - - Google Patents

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Publication number
JPWO2023042638A5
JPWO2023042638A5 JP2023548382A JP2023548382A JPWO2023042638A5 JP WO2023042638 A5 JPWO2023042638 A5 JP WO2023042638A5 JP 2023548382 A JP2023548382 A JP 2023548382A JP 2023548382 A JP2023548382 A JP 2023548382A JP WO2023042638 A5 JPWO2023042638 A5 JP WO2023042638A5
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JP
Japan
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region
concentration
insulated gate
bipolar transistor
concentration peak
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JP2023548382A
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English (en)
Japanese (ja)
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JPWO2023042638A1 (https=
JP7729391B2 (ja
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Priority claimed from PCT/JP2022/032121 external-priority patent/WO2023042638A1/ja
Publication of JPWO2023042638A1 publication Critical patent/JPWO2023042638A1/ja
Publication of JPWO2023042638A5 publication Critical patent/JPWO2023042638A5/ja
Application granted granted Critical
Publication of JP7729391B2 publication Critical patent/JP7729391B2/ja
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JP2023548382A 2021-09-16 2022-08-25 絶縁ゲート型バイポーラトランジスタ Active JP7729391B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021151593 2021-09-16
JP2021151593 2021-09-16
PCT/JP2022/032121 WO2023042638A1 (ja) 2021-09-16 2022-08-25 絶縁ゲート型バイポーラトランジスタ

Publications (3)

Publication Number Publication Date
JPWO2023042638A1 JPWO2023042638A1 (https=) 2023-03-23
JPWO2023042638A5 true JPWO2023042638A5 (https=) 2023-11-27
JP7729391B2 JP7729391B2 (ja) 2025-08-26

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ID=85602157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023548382A Active JP7729391B2 (ja) 2021-09-16 2022-08-25 絶縁ゲート型バイポーラトランジスタ

Country Status (5)

Country Link
US (1) US20230395706A1 (https=)
JP (1) JP7729391B2 (https=)
CN (1) CN116888741A (https=)
DE (1) DE112022000506T5 (https=)
WO (1) WO2023042638A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026053658A1 (ja) * 2024-09-05 2026-03-12 富士電機株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3288218B2 (ja) * 1995-03-14 2002-06-04 三菱電機株式会社 絶縁ゲート型半導体装置およびその製造方法
JP2008159916A (ja) * 2006-12-25 2008-07-10 Sanyo Electric Co Ltd 半導体装置
JP2008288386A (ja) * 2007-05-17 2008-11-27 Hitachi Ltd 半導体装置
CN101694850B (zh) * 2009-10-16 2011-09-14 电子科技大学 一种具有p型浮空层的载流子存储槽栅igbt
US20160211334A1 (en) * 2013-10-04 2016-07-21 Mitsubishi Electric Corporation Silicon carbide semiconductor device and method for manufacturing same
JP6715567B2 (ja) * 2014-12-16 2020-07-01 富士電機株式会社 半導体装置
JP6728953B2 (ja) * 2015-07-16 2020-07-22 富士電機株式会社 半導体装置及びその製造方法
WO2018030440A1 (ja) * 2016-08-12 2018-02-15 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2019012762A (ja) * 2017-06-30 2019-01-24 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
WO2019142706A1 (ja) 2018-01-17 2019-07-25 富士電機株式会社 半導体装置

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