JP2022058636A5 - - Google Patents

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Publication number
JP2022058636A5
JP2022058636A5 JP2022004872A JP2022004872A JP2022058636A5 JP 2022058636 A5 JP2022058636 A5 JP 2022058636A5 JP 2022004872 A JP2022004872 A JP 2022004872A JP 2022004872 A JP2022004872 A JP 2022004872A JP 2022058636 A5 JP2022058636 A5 JP 2022058636A5
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JP
Japan
Prior art keywords
region
semiconductor device
trench portion
mesa
conductive type
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Application number
JP2022004872A
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English (en)
Japanese (ja)
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JP7294464B2 (ja
JP2022058636A (ja
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Priority claimed from JP2018036817A external-priority patent/JP7020185B2/ja
Application filed filed Critical
Publication of JP2022058636A publication Critical patent/JP2022058636A/ja
Publication of JP2022058636A5 publication Critical patent/JP2022058636A5/ja
Priority to JP2023092671A priority Critical patent/JP7559875B2/ja
Application granted granted Critical
Publication of JP7294464B2 publication Critical patent/JP7294464B2/ja
Priority to JP2024160761A priority patent/JP2024166349A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2022004872A 2017-03-15 2022-01-17 半導体装置 Active JP7294464B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023092671A JP7559875B2 (ja) 2017-03-15 2023-06-05 半導体装置
JP2024160761A JP2024166349A (ja) 2017-03-15 2024-09-18 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017050462 2017-03-15
JP2017050462 2017-03-15
JP2018036817A JP7020185B2 (ja) 2017-03-15 2018-03-01 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2018036817A Division JP7020185B2 (ja) 2017-03-15 2018-03-01 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023092671A Division JP7559875B2 (ja) 2017-03-15 2023-06-05 半導体装置

Publications (3)

Publication Number Publication Date
JP2022058636A JP2022058636A (ja) 2022-04-12
JP2022058636A5 true JP2022058636A5 (https=) 2022-04-25
JP7294464B2 JP7294464B2 (ja) 2023-06-20

Family

ID=63519569

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2018036817A Active JP7020185B2 (ja) 2017-03-15 2018-03-01 半導体装置
JP2022004872A Active JP7294464B2 (ja) 2017-03-15 2022-01-17 半導体装置
JP2023092671A Active JP7559875B2 (ja) 2017-03-15 2023-06-05 半導体装置
JP2024160761A Pending JP2024166349A (ja) 2017-03-15 2024-09-18 半導体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2018036817A Active JP7020185B2 (ja) 2017-03-15 2018-03-01 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023092671A Active JP7559875B2 (ja) 2017-03-15 2023-06-05 半導体装置
JP2024160761A Pending JP2024166349A (ja) 2017-03-15 2024-09-18 半導体装置

Country Status (2)

Country Link
US (1) US11532737B2 (https=)
JP (4) JP7020185B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11532737B2 (en) * 2017-03-15 2022-12-20 Fuji Electric Co., Ltd. Semiconductor device
JP6626929B1 (ja) * 2018-06-29 2019-12-25 京セラ株式会社 半導体デバイス及び電気装置
JP7396513B2 (ja) 2020-10-16 2023-12-12 富士電機株式会社 半導体装置
DE112022000136T5 (de) * 2021-05-24 2023-06-15 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP2023120081A (ja) 2022-02-17 2023-08-29 富士電機株式会社 半導体装置
JP7840743B2 (ja) * 2022-03-17 2026-04-06 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
US12154895B2 (en) * 2022-06-02 2024-11-26 Nanya Technology Corporation Semiconductor device with guard ring
US12176342B2 (en) * 2022-06-02 2024-12-24 Nanya Technology Corporation Method for fabricating semiconductor device with guard ring
JP2024035557A (ja) * 2022-09-02 2024-03-14 富士電機株式会社 半導体装置
CN116884996A (zh) * 2023-09-08 2023-10-13 深圳芯能半导体技术有限公司 一种降低关断损耗的igbt芯片及其制作方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3704398A (en) * 1970-02-14 1972-11-28 Nippon Electric Co Multi-emitter power transistor having emitter region arrangement for achieving substantially uniform emitter-base junction temperatures
JP3410286B2 (ja) * 1996-04-01 2003-05-26 三菱電機株式会社 絶縁ゲート型半導体装置
JP4581179B2 (ja) 2000-04-26 2010-11-17 富士電機システムズ株式会社 絶縁ゲート型半導体装置
JP4676125B2 (ja) 2002-07-03 2011-04-27 ルネサスエレクトロニクス株式会社 トレンチゲート型絶縁ゲートバイポーラトランジスタ
JP2004363327A (ja) * 2003-06-04 2004-12-24 Fuji Electric Device Technology Co Ltd 半導体装置
JP4765000B2 (ja) 2003-11-20 2011-09-07 富士電機株式会社 絶縁ゲート型半導体装置
JP2006310606A (ja) * 2005-04-28 2006-11-09 Denso Corp 絶縁ゲート型バイポーラトランジスタ
JP5135719B2 (ja) 2006-06-05 2013-02-06 富士電機株式会社 トレンチ型絶縁ゲート半導体装置
JP5596278B2 (ja) * 2007-07-10 2014-09-24 富士電機株式会社 トレンチ型絶縁ゲートｍｏｓ半導体装置
JP2010093080A (ja) * 2008-10-08 2010-04-22 Fuji Electric Systems Co Ltd 半導体装置
JP6037499B2 (ja) * 2011-06-08 2016-12-07 ローム株式会社 半導体装置およびその製造方法
EP2793266B1 (en) * 2011-12-15 2020-11-11 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device
JP2015162610A (ja) * 2014-02-27 2015-09-07 株式会社東芝 半導体装置
DE112015002120B4 (de) * 2014-12-19 2024-02-22 Fuji Electric Co., Ltd. Halbleitervorrichtung und Halbleitervorrichtungsherstellungsverfahren
WO2016204227A1 (ja) * 2015-06-17 2016-12-22 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6668798B2 (ja) 2015-07-15 2020-03-18 富士電機株式会社 半導体装置
JP2017028056A (ja) * 2015-07-21 2017-02-02 トヨタ自動車株式会社 半導体装置の製造方法
JP6605870B2 (ja) * 2015-07-30 2019-11-13 ルネサスエレクトロニクス株式会社 半導体装置
US11532737B2 (en) * 2017-03-15 2022-12-20 Fuji Electric Co., Ltd. Semiconductor device

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