JP7396513B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP7396513B2 JP7396513B2 JP2022557495A JP2022557495A JP7396513B2 JP 7396513 B2 JP7396513 B2 JP 7396513B2 JP 2022557495 A JP2022557495 A JP 2022557495A JP 2022557495 A JP2022557495 A JP 2022557495A JP 7396513 B2 JP7396513 B2 JP 7396513B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- trench
- semiconductor device
- well region
- corner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 180
- 239000000758 substrate Substances 0.000 claims description 93
- 230000001681 protective effect Effects 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 49
- 230000005684 electric field Effects 0.000 description 43
- 229910052751 metal Inorganic materials 0.000 description 41
- 239000002184 metal Substances 0.000 description 41
- 239000011229 interlayer Substances 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 13
- 239000000386 donor Substances 0.000 description 11
- 230000006378 damage Effects 0.000 description 9
- 239000000370 acceptor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000036413 temperature sense Effects 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum-silicon-copper Chemical compound 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000852 hydrogen donor Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
[先行技術文献]
[特許文献]
[特許文献1]国際公開第2019/078166号
[特許文献2]特開2020-077674号公報
[特許文献3]特開2019-186510号公報
[特許文献4]国際公開第2018/154963号
・・・(1)
ここでqは電荷素量、ε0は真空の誘電率、εrは比誘電率、pは正孔濃度、NDはドナー濃度である。
は電界(ベクトル)で、
である。ターンオフの場合、ドリフト領域18の空乏層内部における電子濃度とアクセプタ濃度は十分小さいため、無視している。即ち、角部111の近傍において、上面のx-y平面の電界の湾曲により、電界強度Eの傾き(divE)が増加する。そのため、電界強度Eそのものも増加する。よって、E(R)は、角部111に近づくほど、Emから増加する。
E(R)=Ep×exp(-R/ΔR)+Em ・・・式(2)
Epは角部111におけるピーク電界強度、ΔRは電界強度が減衰する特徴的長さである。Epは、一例として臨界電界強度であってよい。本例では、Epを6E5(V/cm)としている。ΔRは、一例として200μm~400μm程度である。本例のΔRは、300μmである。ただし、ΔRはこの範囲に限られない。
Em={2V(q/(ε0εr)(p+ND0)}0.5 ・・・式(3)
正孔濃度pについては、例えばトランジスタ部70がターンオフする場合を想定し、ここでは定格電流Jrate程度の電流が流れている場合を想定している。ターンオフでは電圧が印加されているので、空乏層(即ち、空間電荷領域)内の正孔の速度はvsatで飽和しているとしてよく、正孔濃度pが次の式(4)を満たす。
p=Jrate/(qvsat) ・・・式(4)
vsatは、例えばシリコン中の正孔では8×106(cm/s)である。本例では、ND0=5E13/cm3、印加電圧V=600V、定格電流密度Jrate=500A/cm2とし、Emは2.83E5(V/cm)である。
Claims (20)
- 半導体基板に設けられた活性部と、
ゲート導電部を有し、前記活性部において、予め定められた延伸方向に延伸して設けられ、予め定められた配列方向に配列された複数のトレンチ部であって、前記延伸方向におけるトレンチ長さに対する、前記ゲート導電部の前記配列方向における幅の導電部形状比が1000以上である複数のトレンチ部と、
上面視において、前記半導体基板の予め定められた第1外周辺から前記半導体基板の内側に張り出して設けられた第1制御パッドと、
前記第1制御パッドの下方に設けられ、上面視において前記第1制御パッドを覆って設けられた第1ウェル領域と
を備え、
上面視において、前記第1ウェル領域と、前記複数のトレンチ部の前記延伸方向における長さの中央であるトレンチ中央位置との間の最短距離が1000μm以上、20000μm以下である
半導体装置。 - 前記最短距離は、1500μm以上、20000μm以下である
請求項1に記載の半導体装置。 - 前記最短距離は、2000μm以上、20000μm以下である
請求項1または2に記載の半導体装置。 - 前記複数のトレンチ部の前記導電部形状比は、3000以上、1×106以下である
請求項1から3のいずれか一項に記載の半導体装置。 - 前記複数のトレンチ部は、ゲート電位に設定されたゲートトレンチ部を含み、
前記ゲートトレンチ部の前記導電部形状比は、5000以上、3×105以下である
請求項1から4のいずれか一項に記載の半導体装置。 - 前記第1制御パッドは、アノードパッド、カソードパッドおよびセンスパッドを含む
請求項1から4のいずれか一項に記載の半導体装置。 - 前記第1ウェル領域は、上面視で矩形を有し、前記第1ウェル領域の3辺が前記活性部と対向して設けられる
請求項1から6のいずれか一項に記載の半導体装置。 - 前記第1ウェル領域は、前記第1外周辺から張り出して設けられた角部を有し、
前記最短距離は、前記第1ウェル領域の前記角部と、前記トレンチ中央位置との距離である
請求項1から7のいずれか一項に記載の半導体装置。 - 前記第1外周辺と直交し、前記第1外周辺の中央を通る中央仮想線から、前記第1ウェル領域の前記角部までの距離L1aは、前記中央仮想線と直交する方向における前記中央仮想線から前記半導体基板の外周端までの長さの40%以上、90%以下である
請求項8に記載の半導体装置。 - 前記第1ウェル領域は、前記第1外周辺と直交して前記第1外周辺の中央を通る中央仮想線に対して対称に設けられる
請求項1から9のいずれか一項に記載の半導体装置。 - 前記第1ウェル領域は、前記第1外周辺と直交して前記第1外周辺の中央を通る中央仮想線に対して非対称に設けられる
請求項1から9のいずれか一項に記載の半導体装置。 - 前記第1ウェル領域は、上面視において、角の一部が切り取られた切欠部を備える
請求項1から11のいずれか一項に記載の半導体装置。 - 上面視において、前記第1外周辺と対向する第2外周辺から前記半導体基板の内側に張り出して設けられた第2制御パッドと、
前記第2制御パッドの下方に設けられ、上面視において前記第2制御パッドを覆って設けられた第2ウェル領域と
を備え、
前記第2ウェル領域は、前記第2外周辺から張り出して設けられた角部を有し、
前記距離L1aは、前記延伸方向における前記中央仮想線から前記第2ウェル領域の角部までの距離L2aより長い
請求項9に記載の半導体装置。 - 前記第2制御パッドは、前記複数のトレンチ部をゲート電位に設定するためのゲートパッドを含む
請求項13に記載の半導体装置。 - 前記活性部は、トランジスタ部およびダイオード部を備え、
前記第1ウェル領域の角部は、上面視において、前記トランジスタ部に位置する
請求項1から14のいずれか一項に記載の半導体装置。 - 前記複数のトレンチ部がエミッタ電位に設定されたダミートレンチ領域を備え、
前記第1ウェル領域の角部は、上面視において、前記ダミートレンチ領域に位置する
請求項1から14のいずれか一項に記載の半導体装置。 - 前記活性部は、トランジスタ部およびダイオード部を備え、
前記第1ウェル領域の角部は、上面視において、前記ダイオード部に位置する
請求項1から14のいずれか一項に記載の半導体装置。 - 前記半導体基板の上方に設けられた保護膜を備え、
前記ダイオード部は、前記半導体基板のおもて面側にライフタイム制御領域を有し、
前記保護膜は、上面視において、前記ダイオード部を避けて設けられる
請求項17に記載の半導体装置。 - 前記延伸方向は、上面視において、前記第1外周辺と平行である
請求項1から18のいずれか一項に記載の半導体装置。 - 前記延伸方向は、上面視において、前記第1外周辺と直交する
請求項1から18のいずれか一項に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020174399 | 2020-10-16 | ||
JP2020174399 | 2020-10-16 | ||
PCT/JP2021/038317 WO2022080495A1 (ja) | 2020-10-16 | 2021-10-15 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JPWO2022080495A1 JPWO2022080495A1 (ja) | 2022-04-21 |
JPWO2022080495A5 JPWO2022080495A5 (ja) | 2022-12-19 |
JP7396513B2 true JP7396513B2 (ja) | 2023-12-12 |
Family
ID=81208148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022557495A Active JP7396513B2 (ja) | 2020-10-16 | 2021-10-15 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230019632A1 (ja) |
JP (1) | JP7396513B2 (ja) |
CN (1) | CN115398645A (ja) |
DE (1) | DE112021000878T5 (ja) |
WO (1) | WO2022080495A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019161199A (ja) | 2017-05-17 | 2019-09-19 | ローム株式会社 | 半導体装置 |
JP2019186309A (ja) | 2018-04-04 | 2019-10-24 | 富士電機株式会社 | 半導体装置 |
WO2020162013A1 (ja) | 2019-02-07 | 2020-08-13 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7206652B2 (ja) | 2018-03-30 | 2023-01-18 | 富士電機株式会社 | 半導体装置、半導体パッケージ、半導体モジュール、および半導体回路装置 |
JP7268330B2 (ja) | 2018-11-05 | 2023-05-08 | 富士電機株式会社 | 半導体装置および製造方法 |
-
2021
- 2021-10-15 JP JP2022557495A patent/JP7396513B2/ja active Active
- 2021-10-15 WO PCT/JP2021/038317 patent/WO2022080495A1/ja active Application Filing
- 2021-10-15 CN CN202180024457.4A patent/CN115398645A/zh active Pending
- 2021-10-15 DE DE112021000878.1T patent/DE112021000878T5/de active Pending
-
2022
- 2022-09-20 US US17/948,258 patent/US20230019632A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019161199A (ja) | 2017-05-17 | 2019-09-19 | ローム株式会社 | 半導体装置 |
JP2019186309A (ja) | 2018-04-04 | 2019-10-24 | 富士電機株式会社 | 半導体装置 |
WO2020162013A1 (ja) | 2019-02-07 | 2020-08-13 | 富士電機株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2022080495A1 (ja) | 2022-04-21 |
JPWO2022080495A1 (ja) | 2022-04-21 |
DE112021000878T5 (de) | 2022-11-24 |
CN115398645A (zh) | 2022-11-25 |
US20230019632A1 (en) | 2023-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6061023B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP7230969B2 (ja) | 半導体装置 | |
US11532738B2 (en) | Semiconductor device | |
US20200035817A1 (en) | Semiconductor device | |
JPWO2019111572A1 (ja) | 半導体装置 | |
JP7456520B2 (ja) | 半導体装置 | |
CN111146197A (zh) | 半导体装置及制造方法 | |
JPWO2019098271A1 (ja) | 半導体装置 | |
US20200335497A1 (en) | Semiconductor device | |
JP7497744B2 (ja) | 半導体装置 | |
JPWO2019116748A1 (ja) | 半導体装置およびその製造方法 | |
JP2024019464A (ja) | 半導体装置 | |
JP6733829B2 (ja) | 半導体装置 | |
JP7384287B2 (ja) | 半導体装置 | |
JP7327672B2 (ja) | 半導体装置 | |
US20210265340A1 (en) | Semiconductor device and method for fabricating semiconductor device | |
JP7456113B2 (ja) | 半導体装置 | |
US20230261095A1 (en) | Semiconductor device | |
WO2022239284A1 (ja) | 半導体装置 | |
JP7231065B2 (ja) | 半導体装置 | |
JP7396513B2 (ja) | 半導体装置 | |
JP7488778B2 (ja) | 半導体装置 | |
JP7231064B2 (ja) | 半導体装置 | |
US20220328668A1 (en) | Semiconductor device | |
US20220375933A1 (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220930 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220930 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230606 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230802 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20231031 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231113 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7396513 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |