JP6528594B2 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 123
- 239000010410 layer Substances 0.000 claims description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 14
- 229910052721 tungsten Inorganic materials 0.000 claims description 14
- 239000010937 tungsten Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 3
- 239000012141 concentrate Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
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- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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Description
[先行技術文献]
[特許文献]
特許文献1 特開2012−59945号公報
Claims (9)
- 第1導電型領域と、前記第1導電型領域と異なる導電型を有する第2導電型領域を備える半導体層と、
前記半導体層の表面側に設けられ、且つ、前記第1導電型領域と電気的に接続して設けられた第1トレンチ電極と、
前記半導体層の前記表面側において前記第1トレンチ電極と対向して設けられ、且つ、前記第2導電型領域と電気的に接続して設けられた第2トレンチ電極と
を備え、
前記第1トレンチ電極がメッシュ状に形成され、
前記第1導電型領域および前記第2導電型領域はPN接合を形成し、
前記第1導電型領域は、前記第1トレンチ電極と接する部分に、他の部分よりも不純物濃度が高い高濃度領域を有し、
前記第1トレンチ電極は、前記PN接合の境界面と平行に延伸し、且つ、互いに離間して設けられた2以上の第1平行部を有し、
前記PN接合の境界面に最も近い前記第1平行部の底部に接して前記高濃度領域が設けられており、前記PN接合の境界面に最も遠い前記第1平行部の底部には前記高濃度領域が設けられていない
半導体装置。 - 第1導電型領域と、前記第1導電型領域と異なる導電型を有する第2導電型領域を備える半導体層と、
前記半導体層の表面側に設けられ、且つ、前記第1導電型領域と電気的に接続して設けられた第1トレンチ電極と、
前記半導体層の前記表面側において前記第1トレンチ電極と対向して設けられ、且つ、前記第2導電型領域と電気的に接続して設けられた第2トレンチ電極と
を備え、
前記第1トレンチ電極がメッシュ状に形成され、
前記第1導電型領域および前記第2導電型領域はPN接合を形成し、
前記第1トレンチ電極は、前記PN接合の境界面と平行に延伸し、且つ、互いに離間して設けられた2以上の第1平行部を有し、
前記PN接合の境界面との距離が小さいほど、隣接する前記第1平行部の間隔が狭い
半導体装置。 - 第1導電型領域と、前記第1導電型領域と異なる導電型を有する第2導電型領域を備える半導体層と、
前記半導体層の表面側に設けられ、且つ、前記第1導電型領域と電気的に接続して設けられた第1トレンチ電極と、
前記半導体層の前記表面側において前記第1トレンチ電極と対向して設けられ、且つ、前記第2導電型領域と電気的に接続して設けられた第2トレンチ電極と
を備え、
前記第1トレンチ電極がメッシュ状に形成され、
前記第1導電型領域および前記第2導電型領域はPN接合を形成し、
前記第1トレンチ電極は、前記PN接合の境界面と平行に延伸し、且つ、互いに離間して設けられた2以上の第1平行部を有し、
それぞれの前記第1平行部の間に形成された絶縁膜を更に備え、
前記PN接合の境界面と垂直な方向における前記2以上の第1平行部の間隔は、前記絶縁膜の厚みよりも小さい
半導体装置。 - 第1導電型領域と、前記第1導電型領域と異なる導電型を有する第2導電型領域を備える半導体層と、
前記半導体層の表面側に設けられ、且つ、前記第1導電型領域と電気的に接続して設けられた第1トレンチ電極と、
前記半導体層の前記表面側において前記第1トレンチ電極と対向して設けられ、且つ、前記第2導電型領域と電気的に接続して設けられた第2トレンチ電極と
を備え、
前記第1トレンチ電極がメッシュ状に形成され、
前記第1導電型領域および前記第2導電型領域はPN接合を形成し、
前記第1トレンチ電極は、前記PN接合の境界面と平行に延伸し、且つ、互いに離間して設けられた2以上の第1平行部と、前記2以上の第1平行部と交差するように前記PN接合の前記境界面と垂直に延伸し、且つ、互いに離間して設けられた2以上の第1直交部とを有し、
前記第2トレンチ電極は、前記PN接合の境界面と平行に延伸し、且つ、互いに離間して設けられた2以上の第2平行部と、前記2以上の第2平行部と交差するように前記PN接合の前記境界面と垂直に延伸し、且つ、互いに離間して設けられた2以上の第2直交部とを有し、
前記2以上の第1平行部の間隔は、前記2以上の第2平行部の間隔よりも小さい
半導体装置。 - 前記PN接合の境界面に最も近い前記高濃度領域と、前記PN接合の前記境界面との距離は、0.5μm以上である
請求項1に記載の半導体装置。 - 第1導電型領域と、前記第1導電型領域と異なる導電型を有する第2導電型領域を備え、ポリシリコン層である半導体層と、
前記半導体層の表面側に設けられ、且つ、前記第1導電型領域と電気的に接続して設けられた第1トレンチ電極と、
前記半導体層の前記表面側において前記第1トレンチ電極と対向して設けられ、且つ、前記第2導電型領域と電気的に接続して設けられた第2トレンチ電極と
を備え、
前記第1トレンチ電極がメッシュ状に形成され、
前記第1導電型領域および前記第2導電型領域はPN接合を形成し、
前記第1トレンチ電極に接する前記ポリシリコン層の表面は、前記第1トレンチ電極に接しない前記ポリシリコン層の表面に対して窪んでいる
半導体装置。 - 前記ポリシリコン層が表面側に形成される半導体基板と、
前記半導体基板の表面と前記ポリシリコン層との間に形成された層間絶縁膜と
を更に備える請求項6に記載の半導体装置。 - 第1導電型領域と、前記第1導電型領域と異なる導電型を有する第2導電型領域を備える半導体層と、
前記半導体層の表面側に設けられ、且つ、前記第1導電型領域と電気的に接続して設けられた第1トレンチ電極と、
前記半導体層の前記表面側において前記第1トレンチ電極と対向して設けられ、且つ、前記第2導電型領域と電気的に接続して設けられた第2トレンチ電極と
を備え、
前記第1トレンチ電極がメッシュ状に形成され、
前記第1導電型領域および前記第2導電型領域はPN接合を形成し、
前記第1トレンチ電極は、前記PN接合の境界面と平行に延伸し、且つ、互いに離間して設けられた2以上の第1平行部を有し、
前記第1平行部の、前記PN接合の境界面と垂直な方向における幅は、前記第1トレンチ電極における伝搬長の飽和長さよりも小さい
半導体装置。 - 前記第1トレンチ電極は、タングステンを含む
請求項1から8のいずれか一項に記載の半導体装置。
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JP2015161021A JP6528594B2 (ja) | 2015-08-18 | 2015-08-18 | 半導体装置 |
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EP3712958A4 (en) * | 2017-11-13 | 2021-06-30 | Shindengen Electric Manufacturing Co., Ltd. | WIDE BAND FORBIDDEN SEMICONDUCTOR DEVICE |
CN111129125B (zh) * | 2019-12-18 | 2022-07-12 | 武汉华星光电半导体显示技术有限公司 | Tft阵列基板 |
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JP3160545B2 (ja) | 1997-01-28 | 2001-04-25 | 松下電器産業株式会社 | 埋め込み配線の形成方法 |
JPH11150114A (ja) * | 1997-11-19 | 1999-06-02 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
WO2007036898A2 (en) | 2005-09-29 | 2007-04-05 | Nxp B.V. | Semiconductor device with improved contact pad and method for fabrication thereof |
JP5066928B2 (ja) * | 2007-02-08 | 2012-11-07 | 株式会社デンソー | 半導体装置 |
JP5612268B2 (ja) * | 2008-03-28 | 2014-10-22 | 株式会社東芝 | 半導体装置及びdc−dcコンバータ |
JP5353093B2 (ja) * | 2008-07-15 | 2013-11-27 | 株式会社デンソー | 半導体装置の製造方法 |
JP2011066184A (ja) * | 2009-09-17 | 2011-03-31 | Renesas Electronics Corp | 半導体装置、及びその製造方法 |
US9142463B2 (en) * | 2010-01-29 | 2015-09-22 | Fuji Electric Co., Ltd. | Semiconductor device |
JP2012059945A (ja) | 2010-09-09 | 2012-03-22 | Toshiba Corp | 半導体装置およびその製造方法 |
US9780012B2 (en) * | 2013-12-12 | 2017-10-03 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
DE102014112322B4 (de) * | 2014-08-27 | 2016-08-25 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit Feldelektrode und Kontaktstruktur |
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