JP7085967B2 - ピラー構造を有するトランジスタデバイス - Google Patents
ピラー構造を有するトランジスタデバイス Download PDFInfo
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- JP7085967B2 JP7085967B2 JP2018214339A JP2018214339A JP7085967B2 JP 7085967 B2 JP7085967 B2 JP 7085967B2 JP 2018214339 A JP2018214339 A JP 2018214339A JP 2018214339 A JP2018214339 A JP 2018214339A JP 7085967 B2 JP7085967 B2 JP 7085967B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
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- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Description
少なくとも1つの一般的な態様では、装置は、半導体領域内に配置され、ゲート電極を含む第1のトレンチと、半導体領域内に配置される第2のトレンチと、を含むことができる。本装置は、第1のトレンチと第2のトレンチとの間に配置されたメサ領域と、メサ領域の上部に配置された、第1の導電型のソース領域と、を含むことができる。本装置は、第1の導電型のエピタキシャル層と、メサ領域に配置され、ソース領域と第1の導電型のエピタキシャル層との間に配置された、第2の導電型の基体領域と、を含むことができる。本装置は、ソース領域の第1の部分が、ピラーに対して側方に配置され、ソース領域の第2の部分が、ピラーの上方に配置されるように、メサ領域に配置された第2の導電型のピラーを含むことができる。
Claims (7)
- 半導体領域内に配置され、ゲート電極を含む第1のトレンチと、
前記半導体領域内に配置された第2のトレンチと、
前記第1のトレンチと前記第2のトレンチとの間に配置されたメサ領域と、
前記メサ領域の上部に配置された、第1の導電型のソース領域と、
前記第1の導電型のエピタキシャル層と、
前記メサ領域に配置され、前記第1の導電型の前記ソース領域と前記エピタキシャル層との間に配置された、前記第1の導電型と異なる第2の導電型の基体領域と、
前記ソース領域の第1の部分が、ピラーに対して側方に且つピラーに接して配置され、前記ソース領域の第2の部分が、前記ピラーの上方に且つピラーに接して配置されるように、前記メサ領域に配置された前記第2の導電型のピラーとを備え、
前記ピラーのドーピング濃度は前記基体領域のドーピング濃度よりも高く、
前記ピラーの上面が前記ゲート電極上に形成される誘電体層の上面より上方にある、装置。 - 前記ソース領域が、第3の部分を含み、前記ピラーが、前記ソース領域の前記第1の部分と、前記ソース領域の前記第3の部分との間に配置されている、請求項1に記載の装置。
- 前記ソース領域と接し、オーム接点を画定するソース導体を更に備える、請求項1に記載の装置。
- 前記ソース領域に接しているソース導体と、
ドレイン導体と、
前記エピタキシャル層と接し、前記ソース導体と前記ドレイン導体との間に配置された基板と、を更に備える、請求項1に記載の装置。 - 半導体領域内に配置され、ゲート電極を含む第1のトレンチと、
前記半導体領域内に配置された第2のトレンチと、
前記第1のトレンチと前記第2のトレンチとの間に配置されたメサ領域と、
前記メサ領域の上部に配置された第1の導電型のソース領域と、
前記第1の導電型のエピタキシャル層とを備え、
前記メサ領域が、前記メサ領域に沿った第1の断面における前記第1の導電型と異なる第2の導電型の第1の領域と、前記メサ領域に沿った第2の断面における前記第2の導電型の第2の領域とを含み、
前記第2の導電型の前記第1の領域が、前記第2の導電型の前記第2の領域とは異なる形状を有し、
前記第2の導電型の前記第1の領域と前記第2の導電型の前記第2の領域との両方が、ピラー部と前記ピラー部の下方の基体領域を有し、
前記ピラー部のドーピング濃度は前記基体領域のドーピング濃度よりも高く、
前記第2の導電型の前記第1の領域が、前記ピラー部の上方に前記第2の導電型の基体接点を含み、
前記基体接点のドーピング濃度は前記ピラー部のドーピング濃度よりも高い、装置。 - メサ領域が、第1のトレンチと第2のトレンチとの間に画定されるように、半導体領域内に前記第1のトレンチと前記第2のトレンチとを形成することと、
前記第1のトレンチ及び前記第2のトレンチの各々の側壁に沿って、誘電層を形成することと、
前記第1のトレンチ及び前記第2のトレンチの各々に電極を形成することと、
前記メサ領域内に、第1の導電型の基体領域を形成することと、
ソース領域の第1の部分が、第1の導電型のピラーに対して側方に且つピラーに接して配置され、前記ソース領域の第2の部分が、前記ピラーの上方に且つピラーに接して配置されるように、前記メサ領域の上部に前記第1の導電型と異なる第2の導電型の前記ソース領域を形成することとを含み、
前記ピラーのドーピング濃度は前記基体領域のドーピング濃度よりも高く、
前記ピラーの上面が、前記第1のトレンチの電極上に形成される誘電体層の上面より上方にあって、かつ前記第2のトレンチの電極上に形成される誘電体層の上面より上方にある、方法。 - 注入プロセスを使用して、前記メサ領域の一部に沿って基体接点を形成することと、
前記ソース領域の前記第1の部分が、基体接点領域において不連続性を有するように、前記ソース領域の形成中に、注入をブロックすることと、を更に含む、請求項6に記載の方法。
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