JP7729391B2 - 絶縁ゲート型バイポーラトランジスタ - Google Patents

絶縁ゲート型バイポーラトランジスタ

Info

Publication number
JP7729391B2
JP7729391B2 JP2023548382A JP2023548382A JP7729391B2 JP 7729391 B2 JP7729391 B2 JP 7729391B2 JP 2023548382 A JP2023548382 A JP 2023548382A JP 2023548382 A JP2023548382 A JP 2023548382A JP 7729391 B2 JP7729391 B2 JP 7729391B2
Authority
JP
Japan
Prior art keywords
region
doping concentration
semiconductor substrate
concentration
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023548382A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023042638A1 (https=
JPWO2023042638A5 (https=
Inventor
拓弥 山田
晴司 野口
洋輔 桜井
竜太郎 浜崎
大輔 尾崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of JPWO2023042638A1 publication Critical patent/JPWO2023042638A1/ja
Publication of JPWO2023042638A5 publication Critical patent/JPWO2023042638A5/ja
Application granted granted Critical
Publication of JP7729391B2 publication Critical patent/JP7729391B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2023548382A 2021-09-16 2022-08-25 絶縁ゲート型バイポーラトランジスタ Active JP7729391B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021151593 2021-09-16
JP2021151593 2021-09-16
PCT/JP2022/032121 WO2023042638A1 (ja) 2021-09-16 2022-08-25 絶縁ゲート型バイポーラトランジスタ

Publications (3)

Publication Number Publication Date
JPWO2023042638A1 JPWO2023042638A1 (https=) 2023-03-23
JPWO2023042638A5 JPWO2023042638A5 (https=) 2023-11-27
JP7729391B2 true JP7729391B2 (ja) 2025-08-26

Family

ID=85602157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023548382A Active JP7729391B2 (ja) 2021-09-16 2022-08-25 絶縁ゲート型バイポーラトランジスタ

Country Status (5)

Country Link
US (1) US20230395706A1 (https=)
JP (1) JP7729391B2 (https=)
CN (1) CN116888741A (https=)
DE (1) DE112022000506T5 (https=)
WO (1) WO2023042638A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026053658A1 (ja) * 2024-09-05 2026-03-12 富士電機株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159916A (ja) 2006-12-25 2008-07-10 Sanyo Electric Co Ltd 半導体装置
JP2016115847A (ja) 2014-12-16 2016-06-23 富士電機株式会社 半導体装置
JP2017028250A (ja) 2015-07-16 2017-02-02 富士電機株式会社 半導体装置及びその製造方法
WO2018030440A1 (ja) 2016-08-12 2018-02-15 富士電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3288218B2 (ja) * 1995-03-14 2002-06-04 三菱電機株式会社 絶縁ゲート型半導体装置およびその製造方法
JP2008288386A (ja) * 2007-05-17 2008-11-27 Hitachi Ltd 半導体装置
CN101694850B (zh) * 2009-10-16 2011-09-14 电子科技大学 一种具有p型浮空层的载流子存储槽栅igbt
US20160211334A1 (en) * 2013-10-04 2016-07-21 Mitsubishi Electric Corporation Silicon carbide semiconductor device and method for manufacturing same
JP2019012762A (ja) * 2017-06-30 2019-01-24 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
WO2019142706A1 (ja) 2018-01-17 2019-07-25 富士電機株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159916A (ja) 2006-12-25 2008-07-10 Sanyo Electric Co Ltd 半導体装置
JP2016115847A (ja) 2014-12-16 2016-06-23 富士電機株式会社 半導体装置
JP2017028250A (ja) 2015-07-16 2017-02-02 富士電機株式会社 半導体装置及びその製造方法
WO2018030440A1 (ja) 2016-08-12 2018-02-15 富士電機株式会社 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
CN116888741A (zh) 2023-10-13
DE112022000506T5 (de) 2024-03-07
JPWO2023042638A1 (https=) 2023-03-23
WO2023042638A1 (ja) 2023-03-23
US20230395706A1 (en) 2023-12-07

Similar Documents

Publication Publication Date Title
CN108695380B (zh) 半导体装置
US10535761B2 (en) Semiconductor device including a mesa portion including an emitter region having a varied width
US11264495B2 (en) Semiconductor device using regions between pads
JP7521642B2 (ja) 半導体装置
US10181519B2 (en) Power semiconductor device
US10916628B2 (en) Semiconductor device
US9613951B2 (en) Semiconductor device with diode
JP6958011B2 (ja) 半導体装置および半導体装置の製造方法
WO2018147466A1 (ja) 半導体装置
US10872975B2 (en) Semiconductor device
JP7459976B2 (ja) 半導体装置
JP2012089824A (ja) 半導体素子およびその製造方法
CN103915485A (zh) 电荷补偿半导体器件
JP7666089B2 (ja) 半導体装置
JP7613569B2 (ja) 半導体装置
JP7729391B2 (ja) 絶縁ゲート型バイポーラトランジスタ
JP6283709B2 (ja) 半導体装置
JPWO2018154963A1 (ja) 半導体装置
CN111477680A (zh) 双通道均匀电场调制横向双扩散金属氧化物宽带隙半导体场效应管及制作方法
US12520570B2 (en) Semiconductor device
US20250351552A1 (en) Semiconductor device
US20250107141A1 (en) Semiconductor device
WO2025033086A1 (ja) 半導体装置
JP2026059979A (ja) 半導体装置
JP6814652B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230829

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230829

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241008

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241205

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250304

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250428

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250715

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250728

R150 Certificate of patent or registration of utility model

Ref document number: 7729391

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150