JPWO2022249753A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2022249753A5 JPWO2022249753A5 JP2023524066A JP2023524066A JPWO2022249753A5 JP WO2022249753 A5 JPWO2022249753 A5 JP WO2022249753A5 JP 2023524066 A JP2023524066 A JP 2023524066A JP 2023524066 A JP2023524066 A JP 2023524066A JP WO2022249753 A5 JPWO2022249753 A5 JP WO2022249753A5
- Authority
- JP
- Japan
- Prior art keywords
- gate
- wiring
- semiconductor device
- polysilicon
- gate trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021087222 | 2021-05-24 | ||
| JP2021087222 | 2021-05-24 | ||
| PCT/JP2022/016190 WO2022249753A1 (ja) | 2021-05-24 | 2022-03-30 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022249753A1 JPWO2022249753A1 (https=) | 2022-12-01 |
| JPWO2022249753A5 true JPWO2022249753A5 (https=) | 2023-07-19 |
| JP7613576B2 JP7613576B2 (ja) | 2025-01-15 |
Family
ID=84228642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023524066A Active JP7613576B2 (ja) | 2021-05-24 | 2022-03-30 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230261096A1 (https=) |
| JP (1) | JP7613576B2 (https=) |
| CN (1) | CN116457944A (https=) |
| DE (1) | DE112022000136T5 (https=) |
| WO (1) | WO2022249753A1 (https=) |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004221230A (ja) * | 2003-01-14 | 2004-08-05 | Toyota Industries Corp | トレンチ構造を有する半導体装置 |
| US8502314B2 (en) * | 2011-04-21 | 2013-08-06 | Fairchild Semiconductor Corporation | Multi-level options for power MOSFETS |
| US8872278B2 (en) * | 2011-10-25 | 2014-10-28 | Fairchild Semiconductor Corporation | Integrated gate runner and field implant termination for trench devices |
| JP6115050B2 (ja) | 2012-09-10 | 2017-04-19 | トヨタ自動車株式会社 | 半導体装置 |
| JP5935948B2 (ja) * | 2013-08-06 | 2016-06-15 | 富士電機株式会社 | トレンチゲートｍｏｓ型半導体装置およびその製造方法 |
| JP2017013524A (ja) | 2015-06-26 | 2017-01-19 | ヤマハ発動機株式会社 | 電動補助自転車 |
| JP6686398B2 (ja) * | 2015-12-03 | 2020-04-22 | 富士電機株式会社 | 半導体装置 |
| JP6676947B2 (ja) * | 2015-12-14 | 2020-04-08 | 富士電機株式会社 | 半導体装置 |
| CN107086217B (zh) * | 2016-02-16 | 2023-05-16 | 富士电机株式会社 | 半导体装置 |
| US10522674B2 (en) * | 2016-05-18 | 2019-12-31 | Rohm Co., Ltd. | Semiconductor with unified transistor structure and voltage regulator diode |
| US10692863B2 (en) * | 2016-09-30 | 2020-06-23 | Rohm Co., Ltd. | Semiconductor device and semiconductor package |
| CN109314134B (zh) * | 2016-12-16 | 2021-11-05 | 富士电机株式会社 | 半导体装置及制造方法 |
| US11532737B2 (en) * | 2017-03-15 | 2022-12-20 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP7087280B2 (ja) | 2017-05-31 | 2022-06-21 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| US10600897B2 (en) * | 2017-11-08 | 2020-03-24 | Fuji Electric Co., Ltd. | Semiconductor device |
| CN111052393B (zh) | 2018-02-14 | 2023-11-14 | 富士电机株式会社 | 半导体装置 |
| CN110323273B (zh) * | 2018-03-30 | 2025-02-25 | 富士电机株式会社 | 半导体装置、半导体封装、半导体模块及半导体电路装置 |
-
2022
- 2022-03-30 DE DE112022000136.4T patent/DE112022000136T5/de active Pending
- 2022-03-30 WO PCT/JP2022/016190 patent/WO2022249753A1/ja not_active Ceased
- 2022-03-30 JP JP2023524066A patent/JP7613576B2/ja active Active
- 2022-03-30 CN CN202280007099.0A patent/CN116457944A/zh active Pending
-
2023
- 2023-04-21 US US18/304,377 patent/US20230261096A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7230969B2 (ja) | 半導体装置 | |
| JP7435672B2 (ja) | 半導体装置 | |
| JP6891560B2 (ja) | 半導体装置 | |
| JP7407252B2 (ja) | 半導体装置 | |
| JP7207463B2 (ja) | 半導体装置 | |
| JP6854598B2 (ja) | 半導体装置 | |
| JP7113221B2 (ja) | 炭化珪素半導体装置 | |
| JP7091693B2 (ja) | 半導体装置 | |
| US9825159B2 (en) | Semiconductor device | |
| JP6135181B2 (ja) | 半導体装置 | |
| JP4198302B2 (ja) | 半導体装置 | |
| JP7114901B2 (ja) | 半導体装置 | |
| US9577082B2 (en) | Semiconductor device | |
| CN104465718A (zh) | 半导体装置 | |
| JP2025024190A5 (https=) | ||
| KR100873419B1 (ko) | 높은 항복 전압, 낮은 온 저항 및 작은 스위칭 손실을갖는 전력용 반도체 소자 | |
| JP2023053145A (ja) | Ｒｃ－ｉｇｂｔ半導体装置 | |
| JP2018198266A (ja) | 半導体装置 | |
| JPWO2022249753A5 (https=) | ||
| JP7207361B2 (ja) | 半導体装置 | |
| US20240047541A1 (en) | Semiconductor device | |
| US8853775B2 (en) | Insulated gate bipolar transistor having control electrode disposed in trench | |
| JP2017017078A (ja) | 半導体装置 | |
| JP7222758B2 (ja) | 半導体装置 | |
| CN102456741A (zh) | 半导体器件 |