JP7613576B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP7613576B2
JP7613576B2 JP2023524066A JP2023524066A JP7613576B2 JP 7613576 B2 JP7613576 B2 JP 7613576B2 JP 2023524066 A JP2023524066 A JP 2023524066A JP 2023524066 A JP2023524066 A JP 2023524066A JP 7613576 B2 JP7613576 B2 JP 7613576B2
Authority
JP
Japan
Prior art keywords
gate
semiconductor substrate
wiring
active portion
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023524066A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022249753A1 (https=
JPWO2022249753A5 (https=
Inventor
祐樹 唐本
要 三塚
巧裕 伊倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of JPWO2022249753A1 publication Critical patent/JPWO2022249753A1/ja
Publication of JPWO2022249753A5 publication Critical patent/JPWO2022249753A5/ja
Application granted granted Critical
Publication of JP7613576B2 publication Critical patent/JP7613576B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2023524066A 2021-05-24 2022-03-30 半導体装置 Active JP7613576B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021087222 2021-05-24
JP2021087222 2021-05-24
PCT/JP2022/016190 WO2022249753A1 (ja) 2021-05-24 2022-03-30 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022249753A1 JPWO2022249753A1 (https=) 2022-12-01
JPWO2022249753A5 JPWO2022249753A5 (https=) 2023-07-19
JP7613576B2 true JP7613576B2 (ja) 2025-01-15

Family

ID=84228642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023524066A Active JP7613576B2 (ja) 2021-05-24 2022-03-30 半導体装置

Country Status (5)

Country Link
US (1) US20230261096A1 (https=)
JP (1) JP7613576B2 (https=)
CN (1) CN116457944A (https=)
DE (1) DE112022000136T5 (https=)
WO (1) WO2022249753A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221230A (ja) 2003-01-14 2004-08-05 Toyota Industries Corp トレンチ構造を有する半導体装置
JP2014053552A (ja) 2012-09-10 2014-03-20 Toyota Motor Corp 半導体装置
WO2015019862A1 (ja) 2013-08-06 2015-02-12 富士電機株式会社 トレンチゲートｍｏｓ型半導体装置およびその製造方法
JP2017112134A (ja) 2015-12-14 2017-06-22 富士電機株式会社 半導体装置
JP2018157200A (ja) 2017-03-15 2018-10-04 富士電機株式会社 半導体装置
WO2019159657A1 (ja) 2018-02-14 2019-08-22 富士電機株式会社 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8502314B2 (en) * 2011-04-21 2013-08-06 Fairchild Semiconductor Corporation Multi-level options for power MOSFETS
US8872278B2 (en) * 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
JP2017013524A (ja) 2015-06-26 2017-01-19 ヤマハ発動機株式会社 電動補助自転車
JP6686398B2 (ja) * 2015-12-03 2020-04-22 富士電機株式会社 半導体装置
CN107086217B (zh) * 2016-02-16 2023-05-16 富士电机株式会社 半导体装置
US10522674B2 (en) * 2016-05-18 2019-12-31 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode
US10692863B2 (en) * 2016-09-30 2020-06-23 Rohm Co., Ltd. Semiconductor device and semiconductor package
CN109314134B (zh) * 2016-12-16 2021-11-05 富士电机株式会社 半导体装置及制造方法
JP7087280B2 (ja) 2017-05-31 2022-06-21 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US10600897B2 (en) * 2017-11-08 2020-03-24 Fuji Electric Co., Ltd. Semiconductor device
CN110323273B (zh) * 2018-03-30 2025-02-25 富士电机株式会社 半导体装置、半导体封装、半导体模块及半导体电路装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221230A (ja) 2003-01-14 2004-08-05 Toyota Industries Corp トレンチ構造を有する半導体装置
JP2014053552A (ja) 2012-09-10 2014-03-20 Toyota Motor Corp 半導体装置
WO2015019862A1 (ja) 2013-08-06 2015-02-12 富士電機株式会社 トレンチゲートｍｏｓ型半導体装置およびその製造方法
JP2017112134A (ja) 2015-12-14 2017-06-22 富士電機株式会社 半導体装置
JP2018157200A (ja) 2017-03-15 2018-10-04 富士電機株式会社 半導体装置
WO2019159657A1 (ja) 2018-02-14 2019-08-22 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
CN116457944A (zh) 2023-07-18
JPWO2022249753A1 (https=) 2022-12-01
WO2022249753A1 (ja) 2022-12-01
US20230261096A1 (en) 2023-08-17
DE112022000136T5 (de) 2023-06-15

Similar Documents

Publication Publication Date Title
JP7497744B2 (ja) 半導体装置
JP7456113B2 (ja) 半導体装置
JP7468786B2 (ja) 半導体装置および製造方法
JP7613570B2 (ja) 半導体装置
JP7459976B2 (ja) 半導体装置
JP7658452B2 (ja) 半導体装置
JP7593511B2 (ja) 半導体装置
JP7608729B2 (ja) 半導体装置
JP7613502B2 (ja) 半導体装置
US12302629B2 (en) Semiconductor device
JP7613569B2 (ja) 半導体装置
JP7666089B2 (ja) 半導体装置
US20240088276A1 (en) Semiconductor apparatus and method for manufacturing semiconductor apparatus
JP7704225B2 (ja) 半導体装置
JP7231064B2 (ja) 半導体装置
JP7683822B2 (ja) 半導体装置
JP7613576B2 (ja) 半導体装置
JP7687453B2 (ja) 半導体装置および製造方法
JP2024035557A (ja) 半導体装置
WO2025033086A1 (ja) 半導体装置
JP7852299B2 (ja) 半導体装置
US20250351552A1 (en) Semiconductor device
WO2025018289A1 (ja) 半導体装置および半導体装置の製造方法
WO2025018290A1 (ja) 半導体装置
JP2026023262A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230427

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230427

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240702

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240828

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20241126

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20241209

R150 Certificate of patent or registration of utility model

Ref document number: 7613576

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150