DE112022000136T5 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

Info

Publication number
DE112022000136T5
DE112022000136T5 DE112022000136.4T DE112022000136T DE112022000136T5 DE 112022000136 T5 DE112022000136 T5 DE 112022000136T5 DE 112022000136 T DE112022000136 T DE 112022000136T DE 112022000136 T5 DE112022000136 T5 DE 112022000136T5
Authority
DE
Germany
Prior art keywords
gate
polysilicon
semiconductor device
semiconductor substrate
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112022000136.4T
Other languages
German (de)
English (en)
Inventor
Yuki Karamoto
Kaname MITSUZUKA
Yoshihiro Ikura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE112022000136T5 publication Critical patent/DE112022000136T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE112022000136.4T 2021-05-24 2022-03-30 Halbleitervorrichtung Pending DE112022000136T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021087222 2021-05-24
JP2021-087222 2021-05-24
PCT/JP2022/016190 WO2022249753A1 (ja) 2021-05-24 2022-03-30 半導体装置

Publications (1)

Publication Number Publication Date
DE112022000136T5 true DE112022000136T5 (de) 2023-06-15

Family

ID=84228642

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112022000136.4T Pending DE112022000136T5 (de) 2021-05-24 2022-03-30 Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US20230261096A1 (https=)
JP (1) JP7613576B2 (https=)
CN (1) CN116457944A (https=)
DE (1) DE112022000136T5 (https=)
WO (1) WO2022249753A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017013524A (ja) 2015-06-26 2017-01-19 ヤマハ発動機株式会社 電動補助自転車
JP2018206873A (ja) 2017-05-31 2018-12-27 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221230A (ja) * 2003-01-14 2004-08-05 Toyota Industries Corp トレンチ構造を有する半導体装置
US8502314B2 (en) * 2011-04-21 2013-08-06 Fairchild Semiconductor Corporation Multi-level options for power MOSFETS
US8872278B2 (en) * 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
JP6115050B2 (ja) * 2012-09-10 2017-04-19 トヨタ自動車株式会社 半導体装置
WO2015019862A1 (ja) * 2013-08-06 2015-02-12 富士電機株式会社 トレンチゲートｍｏｓ型半導体装置およびその製造方法
JP6686398B2 (ja) * 2015-12-03 2020-04-22 富士電機株式会社 半導体装置
JP6676947B2 (ja) * 2015-12-14 2020-04-08 富士電機株式会社 半導体装置
CN107086217B (zh) * 2016-02-16 2023-05-16 富士电机株式会社 半导体装置
US10522674B2 (en) * 2016-05-18 2019-12-31 Rohm Co., Ltd. Semiconductor with unified transistor structure and voltage regulator diode
US10692863B2 (en) * 2016-09-30 2020-06-23 Rohm Co., Ltd. Semiconductor device and semiconductor package
CN109314134B (zh) * 2016-12-16 2021-11-05 富士电机株式会社 半导体装置及制造方法
JP7020185B2 (ja) * 2017-03-15 2022-02-16 富士電機株式会社 半導体装置
US10600897B2 (en) * 2017-11-08 2020-03-24 Fuji Electric Co., Ltd. Semiconductor device
JP6969662B2 (ja) * 2018-02-14 2021-11-24 富士電機株式会社 半導体装置
CN110323273B (zh) * 2018-03-30 2025-02-25 富士电机株式会社 半导体装置、半导体封装、半导体模块及半导体电路装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017013524A (ja) 2015-06-26 2017-01-19 ヤマハ発動機株式会社 電動補助自転車
JP2018206873A (ja) 2017-05-31 2018-12-27 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Also Published As

Publication number Publication date
JP7613576B2 (ja) 2025-01-15
US20230261096A1 (en) 2023-08-17
JPWO2022249753A1 (https=) 2022-12-01
WO2022249753A1 (ja) 2022-12-01
CN116457944A (zh) 2023-07-18

Similar Documents

Publication Publication Date Title
DE112020002205B4 (de) Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung
DE102021114181A1 (de) Halbleitervorrichtung
DE112018001627B4 (de) Halbleitervorrichtung
DE112022000141T5 (de) Halbleitervorrichtung und herstellungsverfahren
DE112020001040T5 (de) Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
DE10112463A1 (de) SJ-Halbleiterbauelement und Verfahren zu dessen Herstellung
DE112021004603T5 (de) Halbleitervorrichtung
DE112021002169T5 (de) Halbleitervorrichtung
DE112021000105T5 (de) Halbleitervorrichtung und verfahren zur herstellung einer halbleitervorrichtung
DE112019000166T5 (de) Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung
DE112021002612T5 (de) Halbleitervorrichtung
DE112020000333T5 (de) Halbleitervorrichtung
DE112022000977T5 (de) Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
DE112021001364B4 (de) Halbleitervorrichtung
DE112020002890T5 (de) Halbleitervorrichtung
DE112021000205T5 (de) Halbleitervorrichtung
DE112021000166T5 (de) Halbleitervorrichtung
DE112021004621T5 (de) Halbleitervorrichtung
DE112020000076T5 (de) Halbleitervorrichtung
DE112020001043T5 (de) Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
DE112019003399T5 (de) Halbleitervorrichtung
DE112022000087T5 (de) Halbleitervorrichtung
DE112021001383T5 (de) Halbleitervorrichtung und verfahren zum herstellen einer halbleitervorrichtung
DE112021000309T5 (de) Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
DE112021000038T5 (de) Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029739000

Ipc: H10D0012000000