JPWO2022249753A1 - - Google Patents
Info
- Publication number
- JPWO2022249753A1 JPWO2022249753A1 JP2023524066A JP2023524066A JPWO2022249753A1 JP WO2022249753 A1 JPWO2022249753 A1 JP WO2022249753A1 JP 2023524066 A JP2023524066 A JP 2023524066A JP 2023524066 A JP2023524066 A JP 2023524066A JP WO2022249753 A1 JPWO2022249753 A1 JP WO2022249753A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/115—Resistive field plates, e.g. semi-insulating field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/422—PN diodes having the PN junctions in mesas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021087222 | 2021-05-24 | ||
| JP2021087222 | 2021-05-24 | ||
| PCT/JP2022/016190 WO2022249753A1 (ja) | 2021-05-24 | 2022-03-30 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022249753A1 true JPWO2022249753A1 (https=) | 2022-12-01 |
| JPWO2022249753A5 JPWO2022249753A5 (https=) | 2023-07-19 |
| JP7613576B2 JP7613576B2 (ja) | 2025-01-15 |
Family
ID=84228642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023524066A Active JP7613576B2 (ja) | 2021-05-24 | 2022-03-30 | 半導体装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230261096A1 (https=) |
| JP (1) | JP7613576B2 (https=) |
| CN (1) | CN116457944A (https=) |
| DE (1) | DE112022000136T5 (https=) |
| WO (1) | WO2022249753A1 (https=) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004221230A (ja) * | 2003-01-14 | 2004-08-05 | Toyota Industries Corp | トレンチ構造を有する半導体装置 |
| JP2014053552A (ja) * | 2012-09-10 | 2014-03-20 | Toyota Motor Corp | 半導体装置 |
| WO2015019862A1 (ja) * | 2013-08-06 | 2015-02-12 | 富士電機株式会社 | トレンチゲートｍｏｓ型半導体装置およびその製造方法 |
| JP2017112134A (ja) * | 2015-12-14 | 2017-06-22 | 富士電機株式会社 | 半導体装置 |
| JP2018157200A (ja) * | 2017-03-15 | 2018-10-04 | 富士電機株式会社 | 半導体装置 |
| WO2019159657A1 (ja) * | 2018-02-14 | 2019-08-22 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8502314B2 (en) * | 2011-04-21 | 2013-08-06 | Fairchild Semiconductor Corporation | Multi-level options for power MOSFETS |
| US8872278B2 (en) * | 2011-10-25 | 2014-10-28 | Fairchild Semiconductor Corporation | Integrated gate runner and field implant termination for trench devices |
| JP2017013524A (ja) | 2015-06-26 | 2017-01-19 | ヤマハ発動機株式会社 | 電動補助自転車 |
| JP6686398B2 (ja) * | 2015-12-03 | 2020-04-22 | 富士電機株式会社 | 半導体装置 |
| CN107086217B (zh) * | 2016-02-16 | 2023-05-16 | 富士电机株式会社 | 半导体装置 |
| US10522674B2 (en) * | 2016-05-18 | 2019-12-31 | Rohm Co., Ltd. | Semiconductor with unified transistor structure and voltage regulator diode |
| US10692863B2 (en) * | 2016-09-30 | 2020-06-23 | Rohm Co., Ltd. | Semiconductor device and semiconductor package |
| CN109314134B (zh) * | 2016-12-16 | 2021-11-05 | 富士电机株式会社 | 半导体装置及制造方法 |
| JP7087280B2 (ja) | 2017-05-31 | 2022-06-21 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| US10600897B2 (en) * | 2017-11-08 | 2020-03-24 | Fuji Electric Co., Ltd. | Semiconductor device |
| CN110323273B (zh) * | 2018-03-30 | 2025-02-25 | 富士电机株式会社 | 半导体装置、半导体封装、半导体模块及半导体电路装置 |
-
2022
- 2022-03-30 DE DE112022000136.4T patent/DE112022000136T5/de active Pending
- 2022-03-30 WO PCT/JP2022/016190 patent/WO2022249753A1/ja not_active Ceased
- 2022-03-30 JP JP2023524066A patent/JP7613576B2/ja active Active
- 2022-03-30 CN CN202280007099.0A patent/CN116457944A/zh active Pending
-
2023
- 2023-04-21 US US18/304,377 patent/US20230261096A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004221230A (ja) * | 2003-01-14 | 2004-08-05 | Toyota Industries Corp | トレンチ構造を有する半導体装置 |
| JP2014053552A (ja) * | 2012-09-10 | 2014-03-20 | Toyota Motor Corp | 半導体装置 |
| WO2015019862A1 (ja) * | 2013-08-06 | 2015-02-12 | 富士電機株式会社 | トレンチゲートｍｏｓ型半導体装置およびその製造方法 |
| JP2017112134A (ja) * | 2015-12-14 | 2017-06-22 | 富士電機株式会社 | 半導体装置 |
| JP2018157200A (ja) * | 2017-03-15 | 2018-10-04 | 富士電機株式会社 | 半導体装置 |
| WO2019159657A1 (ja) * | 2018-02-14 | 2019-08-22 | 富士電機株式会社 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116457944A (zh) | 2023-07-18 |
| JP7613576B2 (ja) | 2025-01-15 |
| WO2022249753A1 (ja) | 2022-12-01 |
| US20230261096A1 (en) | 2023-08-17 |
| DE112022000136T5 (de) | 2023-06-15 |
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