JP2018198266A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 239000010410 layer Substances 0.000 claims description 109
- 239000011229 interlayer Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
【解決手段】半導体装置は、第1電極と、第2電極と、第1電極と第2電極との間に設けられた半導体層と、半導体層内に設けられ第1方向に延びる複数のゲート電極と、半導体層内に設けられ第2方向に延び、ゲート電極と接続された複数のゲート配線と、を備えている。半導体層は、第1電極上に設けられた第1半導体層と、第1半導体層上に設けられた第1導電型の第2半導体層と、第2半導体層上に設けられた第2導電型の第3半導体層と、第3半導体層上に設けられ、第2電極と接続された第1導電型の第4半導体層と、を有する。
【選択図】図2
Description
図2は、図1における一部領域Sの拡大平面図である。
図3は、図2におけるA−A’断面図である。
図5は、図2におけるC−C’断面図である。
図6は、図2におけるD−D’断面図である。
Claims (12)
- 第1電極と、
第2電極と、
前記第1電極と前記第2電極との間に設けられた半導体層と、
前記半導体層内に設けられ、第1方向に延びる複数のゲート電極と、
前記半導体層内に設けられ、前記第1方向に対して交差する第2方向に延び、前記ゲート電極と接続された複数のゲート配線と、
前記ゲート電極と前記半導体層との間、および前記ゲート配線と前記半導体層との間に設けられた絶縁膜と、
前記ゲート電極と前記第2電極との間、および前記ゲート配線と前記第2電極との間に設けられた層間絶縁膜と、
を備え、
前記半導体層は、
前記第1電極上に設けられた第1半導体層と、
前記第1半導体層上に設けられた第1導電型の第2半導体層と、
前記第2半導体層上に設けられた第2導電型の第3半導体層と、
前記第3半導体層上に設けられ、前記第2電極と接続された第1導電型の第4半導体層と、
を有する半導体装置。 - 前記ゲート配線の上に設けられたゲートパッドと、
前記ゲートパッドと前記ゲート配線との間に設けられ、前記ゲートパッドと前記ゲート配線とを接続するスルー電極と、
をさらに備えた請求項1記載の半導体装置。 - 前記ゲートパッドは、前記第2電極に重ならない領域における、前記ゲート配線の前記第2方向の端部の上に配置されている請求項2記載の半導体装置。
- 前記複数のゲート配線が配置されたゲート配線領域で前記ゲート配線のボトムよりも深い位置に設けられた第2導電型の第5半導体層をさらに備えた請求項1〜3のいずれか1つに記載の半導体装置。
- 前記第5半導体層は、前記第2電極と電気的に接続されている請求項4記載の半導体装置。
- 前記複数のゲート電極の数は、前記複数のゲート配線の数よりも多い請求項1〜5のいずれか1つに記載の半導体装置。
- 前記ゲート電極と前記ゲート配線は同じ材料で一体に設けられている請求項1〜6のいずれか1つに記載の半導体装置。
- 前記ゲート電極および前記ゲート配線の材料は、シリコンである請求項7記載の半導体装置。
- 前記ゲート電極の幅と前記ゲート配線の幅は略等しい請求項1〜8のいずれか1つに記載の半導体装置。
- 前記複数のゲート配線が配置されたゲート配線領域が、前記第1方向に離間して配置されている請求項1〜9のいずれか1つに記載の半導体装置。
- 前記第1半導体層は第2導電型である請求項1〜10のいずれか1つに記載の半導体装置。
- 前記ゲート電極と前記ゲート配線とはT字状に接続している請求項1〜11のいずれか1つに記載の半導体装置。
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JP2017102542A JP6930858B2 (ja) | 2017-05-24 | 2017-05-24 | 半導体装置 |
US15/837,453 US10553710B2 (en) | 2017-05-24 | 2017-12-11 | Semiconductor device |
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CN105226090B (zh) * | 2015-11-10 | 2018-07-13 | 株洲中车时代电气股份有限公司 | 一种绝缘栅双极晶体管及其制作方法 |
JP7224979B2 (ja) * | 2019-03-15 | 2023-02-20 | 株式会社東芝 | 半導体装置 |
CN110473918A (zh) * | 2019-08-30 | 2019-11-19 | 丽晶美能(北京)电子技术有限公司 | 沟槽式栅极结构igbt |
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