JP2018026450A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 238000001514 detection method Methods 0.000 claims abstract description 105
- 210000000746 body region Anatomy 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000012535 impurity Substances 0.000 claims description 15
- 230000015556 catabolic process Effects 0.000 claims description 13
- 238000010586 diagram Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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Abstract
Description
特許文献1 特開2010−219258号公報
Claims (9)
- 半導体基板と、
前記半導体基板の内部に形成された1以上の動作用セルを含む本体領域と、
前記半導体基板の内部に形成された1以上の電流検出用セルを含む電流検出領域と、
前記半導体基板の内部において前記本体領域と前記電流検出領域との間に設けられ、耐圧構造部を含む中間領域と
を備え、
前記本体領域、前記電流検出領域および前記中間領域において、第1導電型のカラムおよび第2導電型のカラムが等間隔で交互に配置された
半導体装置。 - 前記中間領域は、前記半導体基板の上方に形成された形成されたフィールドプレートを有する
請求項1に記載の半導体装置。 - 前記中間領域は、前記本体領域に隣接する領域と、前記電流検出領域に隣接する領域とにダイオード部が形成されている
請求項2に記載の半導体装置。 - 前記半導体基板の内部には、
第1導電型のベース領域と、
前記ベース領域の下方に形成された第2導電型のドリフト領域と
が形成され、
前記本体領域および前記電流検出領域は、
前記半導体基板の上面から前記ベース領域の下側まで延伸して形成され、同一の間隔で配置された複数のトレンチ部と、
それぞれのトレンチ部の間の領域における前記ベース領域の上方に形成された第2導電型の高濃度領域と
を有し、
前記中間領域には、前記高濃度領域が形成されていない
請求項3に記載の半導体装置。 - 前記本体領域に隣接する前記ダイオード部と、前記電流検出領域に隣接する前記ダイオード部は、共通の前記ベース領域を有する
請求項4に記載の半導体装置。 - 前記本体領域に隣接する前記ダイオード部と、前記電流検出領域に隣接する前記ダイオード部は、分離した前記ベース領域を有する
請求項4に記載の半導体装置。 - 前記中間領域は、前記本体領域に隣接する前記ダイオード部の前記ベース領域と、前記電流検出領域に隣接する前記ダイオード部の前記ベース領域との間に、分離した前記ベース領域を更に有する
請求項6に記載の半導体装置。 - 前記本体領域の少なくとも一部の領域の上方に形成された上面側電極と、
前記電流検出領域の少なくとも一部の領域の上方に形成された電流検出用電極と
を更に備え、
前記本体領域に隣接する前記ダイオード部は、前記上面側電極に接続され、
前記電流検出領域に隣接する前記ダイオード部は、前記電流検出用電極に接続される
請求項3から7のいずれか一項に記載の半導体装置。 - 前記第1導電型のカラムおよび前記第2導電型のカラムは、前記本体領域、前記電流検出領域および前記中間領域において、同じ不純物濃度であることを特徴とする
請求項1に記載の半導体装置。
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