JPWO2021099879A5 - - Google Patents
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- JPWO2021099879A5 JPWO2021099879A5 JP2021558028A JP2021558028A JPWO2021099879A5 JP WO2021099879 A5 JPWO2021099879 A5 JP WO2021099879A5 JP 2021558028 A JP2021558028 A JP 2021558028A JP 2021558028 A JP2021558028 A JP 2021558028A JP WO2021099879 A5 JPWO2021099879 A5 JP WO2021099879A5
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- Prior art keywords
- transistor
- storage device
- processor
- information processing
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000010365 information processing Effects 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000003990 capacitor Substances 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000011017 operating method Methods 0.000 claims 1
- 230000004044 response Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025012741A JP7769824B2 (ja) | 2019-11-22 | 2025-01-29 | 演算処理装置の動作方法 |
| JP2025184125A JP2026021464A (ja) | 2019-11-22 | 2025-10-31 | 情報処理装置の動作方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019211795 | 2019-11-22 | ||
| JP2019220177 | 2019-12-05 | ||
| PCT/IB2020/060503 WO2021099879A1 (ja) | 2019-11-22 | 2020-11-09 | コンピュータシステム、及び情報処理装置の動作方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025012741A Division JP7769824B2 (ja) | 2019-11-22 | 2025-01-29 | 演算処理装置の動作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021099879A1 JPWO2021099879A1 (https=) | 2021-05-27 |
| JPWO2021099879A5 true JPWO2021099879A5 (https=) | 2023-11-07 |
Family
ID=75981168
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021558028A Withdrawn JPWO2021099879A1 (https=) | 2019-11-22 | 2020-11-09 | |
| JP2025012741A Active JP7769824B2 (ja) | 2019-11-22 | 2025-01-29 | 演算処理装置の動作方法 |
| JP2025184125A Pending JP2026021464A (ja) | 2019-11-22 | 2025-10-31 | 情報処理装置の動作方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025012741A Active JP7769824B2 (ja) | 2019-11-22 | 2025-01-29 | 演算処理装置の動作方法 |
| JP2025184125A Pending JP2026021464A (ja) | 2019-11-22 | 2025-10-31 | 情報処理装置の動作方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12475948B2 (https=) |
| JP (3) | JPWO2021099879A1 (https=) |
| KR (1) | KR20220103973A (https=) |
| CN (1) | CN114730582A (https=) |
| WO (1) | WO2021099879A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230074757A (ko) | 2020-10-02 | 2023-05-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US12218244B2 (en) * | 2021-07-08 | 2025-02-04 | Tokyo Electron Limited | Vertical transistor structures and methods utilizing selective formation |
| US12262522B2 (en) * | 2022-02-25 | 2025-03-25 | Changxin Memory Technologies, Inc. | Method for fabricating semiconductor structure, semiconductor structure, and memory |
| JP2024043940A (ja) * | 2022-09-20 | 2024-04-02 | キオクシア株式会社 | 半導体記憶装置および半導体記憶装置の製造方法 |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0834257B2 (ja) | 1990-04-20 | 1996-03-29 | 株式会社東芝 | 半導体メモリセル |
| KR100387529B1 (ko) | 2001-06-11 | 2003-06-18 | 삼성전자주식회사 | 랜덤 억세스 가능한 메모리 셀 어레이를 갖는 불휘발성반도체 메모리 장치 |
| JP5138869B2 (ja) | 2002-11-28 | 2013-02-06 | ルネサスエレクトロニクス株式会社 | メモリモジュール及びメモリシステム |
| JP4805696B2 (ja) | 2006-03-09 | 2011-11-02 | 株式会社東芝 | 半導体集積回路装置およびそのデータ記録方式 |
| US8649554B2 (en) | 2009-05-01 | 2014-02-11 | Microsoft Corporation | Method to control perspective for a camera-controlled computer |
| KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2011187794A (ja) | 2010-03-10 | 2011-09-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| KR101884031B1 (ko) | 2010-04-07 | 2018-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| JP5709197B2 (ja) | 2010-05-21 | 2015-04-30 | 国立大学法人 東京大学 | 集積回路装置 |
| KR101853516B1 (ko) | 2010-07-27 | 2018-04-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101258327B1 (ko) | 2010-10-13 | 2013-04-25 | 주식회사 팬택 | 플렉서블 디스플레이부를 구비한 장치 및 그 디스플레이 방법 |
| JP2012146861A (ja) | 2011-01-13 | 2012-08-02 | Toshiba Corp | 半導体記憶装置 |
| KR20130011138A (ko) | 2011-07-20 | 2013-01-30 | 삼성전자주식회사 | 모노 랭크와 멀티 랭크로 호환 가능한 메모리 장치 |
| WO2013080985A1 (ja) | 2011-11-30 | 2013-06-06 | シャープ株式会社 | 制御ユニット、該制御ユニットを含む表示装置、及び、制御方法 |
| JP5842602B2 (ja) | 2011-12-26 | 2016-01-13 | 株式会社Joled | 曲面ディスプレイ |
| JP5926655B2 (ja) * | 2012-08-30 | 2016-05-25 | ルネサスエレクトロニクス株式会社 | 中央処理装置および演算装置 |
| KR102033618B1 (ko) | 2012-12-18 | 2019-10-17 | 엘지디스플레이 주식회사 | 표시장치와 이의 구동방법 |
| KR102071573B1 (ko) | 2013-06-13 | 2020-03-02 | 삼성전자주식회사 | 외부 클락 신호를 이용하여 오실레이터의 주파수를 조절할 수 있는 디스플레이 드라이버 ic, 이를 포함하는 장치, 및 이들의 동작 방법 |
| JP2015056642A (ja) | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 半導体記憶装置 |
| US9973692B2 (en) | 2013-10-03 | 2018-05-15 | Flir Systems, Inc. | Situational awareness by compressed display of panoramic views |
| JP2015075516A (ja) | 2013-10-07 | 2015-04-20 | ソニー株式会社 | 画像処理装置、画像処理方法、および表示装置 |
| US20150155039A1 (en) | 2013-12-02 | 2015-06-04 | Silicon Storage Technology, Inc. | Three-Dimensional Flash NOR Memory System With Configurable Pins |
| KR102172980B1 (ko) | 2014-04-07 | 2020-11-02 | 삼성전자주식회사 | 타일드 디스플레이 시스템 및 그 화상 처리 방법 |
| US9544994B2 (en) | 2014-08-30 | 2017-01-10 | Lg Display Co., Ltd. | Flexible display device with side crack protection structure and manufacturing method for the same |
| US9543370B2 (en) | 2014-09-24 | 2017-01-10 | Apple Inc. | Silicon and semiconducting oxide thin-film transistor displays |
| US9634097B2 (en) | 2014-11-25 | 2017-04-25 | Sandisk Technologies Llc | 3D NAND with oxide semiconductor channel |
| US9761732B2 (en) | 2015-02-25 | 2017-09-12 | Snaptrack Inc. | Tunnel thin film transistor with hetero-junction structure |
| JP6343256B2 (ja) | 2015-05-29 | 2018-06-13 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
| KR102491624B1 (ko) * | 2015-07-27 | 2023-01-25 | 삼성전자주식회사 | 데이터 저장 장치의 작동 방법과 상기 데이터 저장 장치를 포함하는 시스템의 작동 방법 |
| JP6400536B2 (ja) | 2015-08-04 | 2018-10-03 | 東芝メモリ株式会社 | 半導体記憶装置 |
| US10410599B2 (en) | 2015-08-13 | 2019-09-10 | Samsung Electronics Co., Ltd. | Source driver integrated circuit for ompensating for display fan-out and display system including the same |
| JP6545587B2 (ja) | 2015-09-15 | 2019-07-17 | 東芝メモリ株式会社 | 半導体装置 |
| WO2017068478A1 (en) * | 2015-10-22 | 2017-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or memory device including the semiconductor device |
| KR20180081732A (ko) | 2015-11-13 | 2018-07-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
| US10475370B2 (en) | 2016-02-17 | 2019-11-12 | Google Llc | Foveally-rendered display |
| JP2017207747A (ja) | 2016-05-17 | 2017-11-24 | 株式会社半導体エネルギー研究所 | 表示システムおよび移動体 |
| US10210915B2 (en) | 2016-06-10 | 2019-02-19 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device including the same |
| KR102696801B1 (ko) | 2016-07-27 | 2024-08-20 | 삼성전자주식회사 | 수직형 메모리 소자 및 이의 제조방법 |
| WO2018029820A1 (ja) | 2016-08-10 | 2018-02-15 | 株式会社日立製作所 | 計算機システム |
| WO2018047035A1 (en) | 2016-09-12 | 2018-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, driving method thereof, semiconductor device, electronic component, and electronic device |
| US10593693B2 (en) | 2017-06-16 | 2020-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| JP7195068B2 (ja) | 2017-06-26 | 2022-12-23 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
| US11682667B2 (en) | 2017-06-27 | 2023-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Memory cell including cell transistor including control gate and charge accumulation layer |
| JP7234110B2 (ja) | 2017-07-06 | 2023-03-07 | 株式会社半導体エネルギー研究所 | メモリセル及び半導体装置 |
| CN110291586B (zh) * | 2019-05-17 | 2020-10-30 | 长江存储科技有限责任公司 | 具有静态随机存取存储器的三维存储器件的高速缓存程序操作 |
| TW202602212A (zh) | 2019-10-31 | 2026-01-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| JP2022027240A (ja) * | 2020-07-31 | 2022-02-10 | ソニーセミコンダクタソリューションズ株式会社 | 情報処理装置および情報処理方法 |
| US11720261B2 (en) * | 2020-08-10 | 2023-08-08 | Micron Technology, Inc. | Transferring memory system data to a host system |
-
2020
- 2020-11-09 KR KR1020227018723A patent/KR20220103973A/ko active Pending
- 2020-11-09 JP JP2021558028A patent/JPWO2021099879A1/ja not_active Withdrawn
- 2020-11-09 US US17/773,887 patent/US12475948B2/en active Active
- 2020-11-09 WO PCT/IB2020/060503 patent/WO2021099879A1/ja not_active Ceased
- 2020-11-09 CN CN202080079582.0A patent/CN114730582A/zh active Pending
-
2025
- 2025-01-29 JP JP2025012741A patent/JP7769824B2/ja active Active
- 2025-10-21 US US19/363,828 patent/US20260045302A1/en active Pending
- 2025-10-31 JP JP2025184125A patent/JP2026021464A/ja active Pending
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