JPWO2020255655A5 - - Google Patents

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JPWO2020255655A5
JPWO2020255655A5 JP2021527511A JP2021527511A JPWO2020255655A5 JP WO2020255655 A5 JPWO2020255655 A5 JP WO2020255655A5 JP 2021527511 A JP2021527511 A JP 2021527511A JP 2021527511 A JP2021527511 A JP 2021527511A JP WO2020255655 A5 JPWO2020255655 A5 JP WO2020255655A5
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Japan
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node
gate
transistor
transistors
semiconductor storage
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JP2021527511A
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Japanese (ja)
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JPWO2020255655A1 (https=
JP7590655B2 (ja
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Priority claimed from PCT/JP2020/020976 external-priority patent/WO2020255655A1/ja
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JP2021527511A 2019-06-21 2020-05-27 半導体記憶装置 Active JP7590655B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019115209 2019-06-21
JP2019115209 2019-06-21
PCT/JP2020/020976 WO2020255655A1 (ja) 2019-06-21 2020-05-27 半導体記憶装置

Publications (3)

Publication Number Publication Date
JPWO2020255655A1 JPWO2020255655A1 (https=) 2020-12-24
JPWO2020255655A5 true JPWO2020255655A5 (https=) 2022-03-16
JP7590655B2 JP7590655B2 (ja) 2024-11-27

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JP2021527511A Active JP7590655B2 (ja) 2019-06-21 2020-05-27 半導体記憶装置

Country Status (4)

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US (2) US11915744B2 (https=)
JP (1) JP7590655B2 (https=)
CN (1) CN114008762B (https=)
WO (1) WO2020255655A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11114153B2 (en) * 2019-12-30 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. SRAM devices with reduced coupling capacitance
US12039242B2 (en) * 2020-08-31 2024-07-16 Taiwan Semiconductor Manufacturing Company Ltd. Structure and method of non-rectangular cell in semiconductor device
US12199152B2 (en) * 2021-01-18 2025-01-14 Samsung Electronics Co., Ltd. Selective single diffusion/electrical barrier
US12073919B2 (en) * 2021-06-25 2024-08-27 Advanced Micro Devices, Inc. Dual read port latch array bitcell
US12008237B2 (en) * 2022-04-19 2024-06-11 Advanced Micro Devices, Inc. Memory bit cell with homogeneous layout pattern of base layers for high density memory macros
WO2025062483A1 (ja) * 2023-09-19 2025-03-27 株式会社ソシオネクスト 半導体集積回路装置
WO2025099800A1 (ja) * 2023-11-06 2025-05-15 株式会社ソシオネクスト 半導体集積回路装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2665644B2 (ja) 1992-08-11 1997-10-22 三菱電機株式会社 半導体記憶装置
JP2003218238A (ja) 2001-11-14 2003-07-31 Mitsubishi Electric Corp 半導体記憶装置
KR100526884B1 (ko) * 2003-08-25 2005-11-09 삼성전자주식회사 듀얼 포트 에스램의 레이아웃 구조 및 그에 따른 형성방법
KR100702011B1 (ko) * 2005-03-16 2007-03-30 삼성전자주식회사 다중 게이트 트랜지스터들을 채택하는 씨모스 에스램 셀들및 그 제조방법들
US7400523B2 (en) * 2006-06-01 2008-07-15 Texas Instruments Incorporated 8T SRAM cell with higher voltage on the read WL
US9424889B1 (en) * 2015-02-04 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple-port SRAM device
US20090161410A1 (en) * 2007-12-21 2009-06-25 Texas Instruments Inc. Seven transistor sram cell
US8526228B2 (en) * 2012-01-06 2013-09-03 International Business Machines Corporation 8-transistor SRAM cell design with outer pass-gate diodes
JP5726770B2 (ja) * 2012-01-12 2015-06-03 株式会社東芝 半導体装置及びその製造方法
JP2014222740A (ja) * 2013-05-14 2014-11-27 株式会社東芝 半導体記憶装置
JP5612237B1 (ja) 2013-05-16 2014-10-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Ｓｇｔを有する半導体装置の製造方法
US9362292B1 (en) * 2015-04-17 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Two-port SRAM cell structure for vertical devices
US10707218B2 (en) * 2018-07-26 2020-07-07 Globalfoundries Inc. Two port SRAM cell using complementary nano-sheet/wire transistor devices
WO2020246344A1 (ja) * 2019-06-03 2020-12-10 株式会社ソシオネクスト 半導体記憶装置
WO2020255801A1 (ja) * 2019-06-17 2020-12-24 株式会社ソシオネクスト 半導体記憶装置
WO2020255656A1 (ja) * 2019-06-21 2020-12-24 株式会社ソシオネクスト 半導体記憶装置

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