JPWO2020230665A5 - - Google Patents

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JPWO2020230665A5
JPWO2020230665A5 JP2021519379A JP2021519379A JPWO2020230665A5 JP WO2020230665 A5 JPWO2020230665 A5 JP WO2020230665A5 JP 2021519379 A JP2021519379 A JP 2021519379A JP 2021519379 A JP2021519379 A JP 2021519379A JP WO2020230665 A5 JPWO2020230665 A5 JP WO2020230665A5
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JP
Japan
Prior art keywords
transistor
local
wiring
power supply
local wiring
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JP2021519379A
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English (en)
Japanese (ja)
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JPWO2020230665A1 (https=
JP7560746B2 (ja
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Priority claimed from PCT/JP2020/018392 external-priority patent/WO2020230665A1/ja
Publication of JPWO2020230665A1 publication Critical patent/JPWO2020230665A1/ja
Publication of JPWO2020230665A5 publication Critical patent/JPWO2020230665A5/ja
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JP2021519379A 2019-05-13 2020-05-01 半導体記憶装置 Active JP7560746B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019090697 2019-05-13
JP2019090697 2019-05-13
PCT/JP2020/018392 WO2020230665A1 (ja) 2019-05-13 2020-05-01 半導体記憶装置

Publications (3)

Publication Number Publication Date
JPWO2020230665A1 JPWO2020230665A1 (https=) 2020-11-19
JPWO2020230665A5 true JPWO2020230665A5 (https=) 2022-02-10
JP7560746B2 JP7560746B2 (ja) 2024-10-03

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ID=73290170

Family Applications (1)

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JP2021519379A Active JP7560746B2 (ja) 2019-05-13 2020-05-01 半導体記憶装置

Country Status (3)

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US (3) US11881273B2 (https=)
JP (1) JP7560746B2 (https=)
WO (1) WO2020230665A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020230665A1 (ja) * 2019-05-13 2020-11-19 株式会社ソシオネクスト 半導体記憶装置
WO2023157724A1 (ja) * 2022-02-16 2023-08-24 株式会社ソシオネクスト 半導体記憶装置
WO2024018875A1 (ja) * 2022-07-21 2024-01-25 株式会社ソシオネクスト 半導体記憶装置
WO2026004616A1 (ja) * 2024-06-27 2026-01-02 株式会社ソシオネクスト 半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10335813B4 (de) * 2003-08-05 2009-02-12 Infineon Technologies Ag IC-Chip mit Nanowires
US8654592B2 (en) * 2007-06-12 2014-02-18 Micron Technology, Inc. Memory devices with isolation structures
JP4907563B2 (ja) * 2008-01-16 2012-03-28 パナソニック株式会社 半導体記憶装置
US7715246B1 (en) * 2008-06-27 2010-05-11 Juhan Kim Mask ROM with light bit line architecture
JP5073014B2 (ja) * 2010-06-11 2012-11-14 株式会社東芝 半導体装置およびその製造方法
US9400862B2 (en) * 2014-06-23 2016-07-26 Synopsys, Inc. Cells having transistors and interconnects including nanowires or 2D material strips
TWI739879B (zh) 2016-08-10 2021-09-21 日商東京威力科創股份有限公司 用於半導體裝置的延伸區域
KR20180061478A (ko) 2016-11-28 2018-06-08 삼성전자주식회사 반도체 소자
WO2020230665A1 (ja) * 2019-05-13 2020-11-19 株式会社ソシオネクスト 半導体記憶装置

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