JP2005142493A5 - - Google Patents

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Publication number
JP2005142493A5
JP2005142493A5 JP2003379988A JP2003379988A JP2005142493A5 JP 2005142493 A5 JP2005142493 A5 JP 2005142493A5 JP 2003379988 A JP2003379988 A JP 2003379988A JP 2003379988 A JP2003379988 A JP 2003379988A JP 2005142493 A5 JP2005142493 A5 JP 2005142493A5
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JP
Japan
Prior art keywords
lines
memory cell
data selection
line
source
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2003379988A
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English (en)
Japanese (ja)
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JP4455017B2 (ja
JP2005142493A (ja
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Priority claimed from JP2003379988A external-priority patent/JP4455017B2/ja
Priority to JP2003379988A priority Critical patent/JP4455017B2/ja
Application filed filed Critical
Priority to TW093133448A priority patent/TWI260768B/zh
Priority to KR1020040090980A priority patent/KR100598760B1/ko
Priority to US10/983,617 priority patent/US7145199B2/en
Priority to EP04026569.6A priority patent/EP1530237A3/en
Priority to CN2004100954618A priority patent/CN1645515B/zh
Publication of JP2005142493A publication Critical patent/JP2005142493A/ja
Publication of JP2005142493A5 publication Critical patent/JP2005142493A5/ja
Priority to US11/488,093 priority patent/US7339227B2/en
Priority to US12/010,932 priority patent/US7560766B2/en
Priority to US12/457,704 priority patent/US7781823B2/en
Publication of JP4455017B2 publication Critical patent/JP4455017B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003379988A 2003-11-10 2003-11-10 不揮発性半導体記憶装置 Expired - Fee Related JP4455017B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2003379988A JP4455017B2 (ja) 2003-11-10 2003-11-10 不揮発性半導体記憶装置
TW093133448A TWI260768B (en) 2003-11-10 2004-11-03 Nonvolatile semiconductor memory
KR1020040090980A KR100598760B1 (ko) 2003-11-10 2004-11-09 불휘발성 반도체 메모리
US10/983,617 US7145199B2 (en) 2003-11-10 2004-11-09 Nonvolatile semiconductor memory
EP04026569.6A EP1530237A3 (en) 2003-11-10 2004-11-09 Nonvolatile semiconductor memory
CN2004100954618A CN1645515B (zh) 2003-11-10 2004-11-10 非易失性半导体存储器
US11/488,093 US7339227B2 (en) 2003-11-10 2006-07-18 Nonvolatile semiconductor memory
US12/010,932 US7560766B2 (en) 2003-11-10 2008-01-31 Nonvolatile semiconductor memory
US12/457,704 US7781823B2 (en) 2003-11-10 2009-06-18 Nonvolatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003379988A JP4455017B2 (ja) 2003-11-10 2003-11-10 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2005142493A JP2005142493A (ja) 2005-06-02
JP2005142493A5 true JP2005142493A5 (https=) 2005-11-24
JP4455017B2 JP4455017B2 (ja) 2010-04-21

Family

ID=34431391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003379988A Expired - Fee Related JP4455017B2 (ja) 2003-11-10 2003-11-10 不揮発性半導体記憶装置

Country Status (6)

Country Link
US (4) US7145199B2 (https=)
EP (1) EP1530237A3 (https=)
JP (1) JP4455017B2 (https=)
KR (1) KR100598760B1 (https=)
CN (1) CN1645515B (https=)
TW (1) TWI260768B (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4455017B2 (ja) * 2003-11-10 2010-04-21 株式会社東芝 不揮発性半導体記憶装置
JP2006060138A (ja) 2004-08-23 2006-03-02 Toshiba Corp 半導体集積回路装置
JP4664688B2 (ja) * 2005-01-14 2011-04-06 東芝メモリシステムズ株式会社 工業製品の製造方法
JP4874658B2 (ja) * 2005-02-04 2012-02-15 株式会社東芝 不揮発性半導体記憶装置
JP4488926B2 (ja) * 2005-02-21 2010-06-23 株式会社東芝 マスクパターンデータ形成方法、フォトマスク、及び半導体デバイスの製造方法
JP4907897B2 (ja) 2005-04-15 2012-04-04 株式会社東芝 不揮発性半導体記憶装置
KR100731083B1 (ko) * 2005-07-28 2007-06-22 동부일렉트로닉스 주식회사 구리 금속 배선의 형성 방법 및 그에 의해 형성된 구리금속 배선을 포함하는 반도체 소자
DE102005047104B3 (de) * 2005-09-30 2007-05-31 Infineon Technologies Ag Halbleiterbauelement mit miteinander verschalteten Zellstreifen
US7737483B2 (en) 2005-12-06 2010-06-15 Sandisk Corporation Low resistance void-free contacts
EP1958252A2 (en) * 2005-12-06 2008-08-20 SanDisk Corporation Low-resistance void-free contacts for eeprom devices
US7615448B2 (en) 2005-12-06 2009-11-10 Sandisk Corporation Method of forming low resistance void-free contacts
JP4921884B2 (ja) 2006-08-08 2012-04-25 株式会社東芝 半導体記憶装置
KR100780774B1 (ko) * 2006-11-07 2007-11-30 주식회사 하이닉스반도체 낸드형 플래쉬 메모리소자 및 그 제조방법
US7666774B2 (en) * 2007-01-23 2010-02-23 International Business Machines Corporation CMOS structure including dual metal containing composite gates
JP5283960B2 (ja) 2008-04-23 2013-09-04 株式会社東芝 三次元積層不揮発性半導体メモリ
JP2010021349A (ja) * 2008-07-10 2010-01-28 Nec Electronics Corp 半導体記憶装置
JP2010165785A (ja) * 2009-01-14 2010-07-29 Toshiba Corp 半導体記憶装置およびその製造方法
JP2010199235A (ja) * 2009-02-24 2010-09-09 Toshiba Corp 不揮発性半導体記憶装置
US8796778B2 (en) * 2011-12-09 2014-08-05 Micron Technology, Inc. Apparatuses and methods for transposing select gates
JP2013191739A (ja) * 2012-03-14 2013-09-26 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP5814867B2 (ja) 2012-06-27 2015-11-17 株式会社東芝 半導体記憶装置
CN104347634B (zh) * 2013-07-30 2017-05-24 中芯国际集成电路制造(上海)有限公司 一种闪存存储单元阵列
KR102301501B1 (ko) * 2015-01-21 2021-09-13 삼성디스플레이 주식회사 가요성 표시 장치의 제조 방법
JP6515046B2 (ja) * 2016-03-10 2019-05-15 東芝メモリ株式会社 半導体記憶装置
US10014255B2 (en) * 2016-03-14 2018-07-03 International Business Machines Corporation Contacts having a geometry to reduce resistance
US10276491B2 (en) 2016-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure and methods thereof
KR102684539B1 (ko) 2016-12-21 2024-07-16 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
US10600796B2 (en) 2017-06-15 2020-03-24 Micron Technology, Inc. Methods of forming staircase structures
US10283452B2 (en) 2017-09-15 2019-05-07 Yangtze Memory Technology Co., Ltd. Three-dimensional memory devices having a plurality of NAND strings
CN109285774B (zh) * 2018-09-12 2023-03-24 江苏能华微电子科技发展有限公司 一种基于氮化镓的结势垒肖特基二极管及其形成方法
JP2021039965A (ja) * 2019-08-30 2021-03-11 キオクシア株式会社 半導体記憶装置および半導体記憶装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0170714B1 (ko) 1995-12-20 1999-03-30 김광호 낸드형 플래쉬 메모리 소자 및 그 구동방법
JP3600393B2 (ja) * 1997-02-10 2004-12-15 株式会社東芝 半導体装置及びその製造方法
JP3898349B2 (ja) 1997-07-29 2007-03-28 株式会社東芝 半導体記憶装置
JP3225916B2 (ja) * 1998-03-16 2001-11-05 日本電気株式会社 不揮発性半導体記憶装置とその製造方法
JPH11354758A (ja) 1998-06-08 1999-12-24 Hitachi Ltd 半導体記憶装置
JP3940544B2 (ja) * 2000-04-27 2007-07-04 株式会社東芝 不揮発性半導体メモリのベリファイ方法
US6438030B1 (en) * 2000-08-15 2002-08-20 Motorola, Inc. Non-volatile memory, method of manufacture, and method of programming
JP2003188252A (ja) * 2001-12-13 2003-07-04 Toshiba Corp 半導体装置及びその製造方法
CN100533740C (zh) * 2001-12-31 2009-08-26 台湾茂矽电子股份有限公司 包含非易失性存储器的集成电路
JP4455017B2 (ja) * 2003-11-10 2010-04-21 株式会社東芝 不揮発性半導体記憶装置

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