JPWO2020230665A1 - - Google Patents
Info
- Publication number
- JPWO2020230665A1 JPWO2020230665A1 JP2021519379A JP2021519379A JPWO2020230665A1 JP WO2020230665 A1 JPWO2020230665 A1 JP WO2020230665A1 JP 2021519379 A JP2021519379 A JP 2021519379A JP 2021519379 A JP2021519379 A JP 2021519379A JP WO2020230665 A1 JPWO2020230665 A1 JP WO2020230665A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/34—Source electrode or drain electrode programmed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/50—ROM only having transistors on different levels, e.g. 3D ROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019090697 | 2019-05-13 | ||
| JP2019090697 | 2019-05-13 | ||
| PCT/JP2020/018392 WO2020230665A1 (ja) | 2019-05-13 | 2020-05-01 | 半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020230665A1 true JPWO2020230665A1 (https=) | 2020-11-19 |
| JPWO2020230665A5 JPWO2020230665A5 (https=) | 2022-02-10 |
| JP7560746B2 JP7560746B2 (ja) | 2024-10-03 |
Family
ID=73290170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021519379A Active JP7560746B2 (ja) | 2019-05-13 | 2020-05-01 | 半導体記憶装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US11881273B2 (https=) |
| JP (1) | JP7560746B2 (https=) |
| WO (1) | WO2020230665A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020230665A1 (ja) * | 2019-05-13 | 2020-11-19 | 株式会社ソシオネクスト | 半導体記憶装置 |
| WO2023157724A1 (ja) * | 2022-02-16 | 2023-08-24 | 株式会社ソシオネクスト | 半導体記憶装置 |
| WO2024018875A1 (ja) * | 2022-07-21 | 2024-01-25 | 株式会社ソシオネクスト | 半導体記憶装置 |
| WO2026004616A1 (ja) * | 2024-06-27 | 2026-01-02 | 株式会社ソシオネクスト | 半導体記憶装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7715246B1 (en) * | 2008-06-27 | 2010-05-11 | Juhan Kim | Mask ROM with light bit line architecture |
| JP2011258898A (ja) * | 2010-06-11 | 2011-12-22 | Toshiba Corp | 半導体装置およびその製造方法 |
| US20160329313A1 (en) * | 2014-06-23 | 2016-11-10 | Synopsys, Inc. | Cells having transistors and interconnects including nanowires or 2d material strips |
| JP2018026565A (ja) * | 2016-08-10 | 2018-02-15 | 東京エレクトロン株式会社 | 半導体素子のための拡張領域 |
| US20180151576A1 (en) * | 2016-11-28 | 2018-05-31 | Samsung Electronics Co., Ltd. | Semiconductor devices |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10335813B4 (de) * | 2003-08-05 | 2009-02-12 | Infineon Technologies Ag | IC-Chip mit Nanowires |
| US8654592B2 (en) * | 2007-06-12 | 2014-02-18 | Micron Technology, Inc. | Memory devices with isolation structures |
| JP4907563B2 (ja) * | 2008-01-16 | 2012-03-28 | パナソニック株式会社 | 半導体記憶装置 |
| WO2020230665A1 (ja) * | 2019-05-13 | 2020-11-19 | 株式会社ソシオネクスト | 半導体記憶装置 |
-
2020
- 2020-05-01 WO PCT/JP2020/018392 patent/WO2020230665A1/ja not_active Ceased
- 2020-05-01 JP JP2021519379A patent/JP7560746B2/ja active Active
-
2021
- 2021-11-11 US US17/524,535 patent/US11881273B2/en active Active
-
2023
- 2023-12-13 US US18/538,722 patent/US12277980B2/en active Active
-
2025
- 2025-03-18 US US19/082,854 patent/US20250239316A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7715246B1 (en) * | 2008-06-27 | 2010-05-11 | Juhan Kim | Mask ROM with light bit line architecture |
| JP2011258898A (ja) * | 2010-06-11 | 2011-12-22 | Toshiba Corp | 半導体装置およびその製造方法 |
| US20160329313A1 (en) * | 2014-06-23 | 2016-11-10 | Synopsys, Inc. | Cells having transistors and interconnects including nanowires or 2d material strips |
| JP2018026565A (ja) * | 2016-08-10 | 2018-02-15 | 東京エレクトロン株式会社 | 半導体素子のための拡張領域 |
| US20180151576A1 (en) * | 2016-11-28 | 2018-05-31 | Samsung Electronics Co., Ltd. | Semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| US12277980B2 (en) | 2025-04-15 |
| US20220130478A1 (en) | 2022-04-28 |
| US20250239316A1 (en) | 2025-07-24 |
| WO2020230665A1 (ja) | 2020-11-19 |
| US20240112746A1 (en) | 2024-04-04 |
| US11881273B2 (en) | 2024-01-23 |
| JP7560746B2 (ja) | 2024-10-03 |
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