JPWO2020230666A1 - - Google Patents

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Publication number
JPWO2020230666A1
JPWO2020230666A1 JP2021519380A JP2021519380A JPWO2020230666A1 JP WO2020230666 A1 JPWO2020230666 A1 JP WO2020230666A1 JP 2021519380 A JP2021519380 A JP 2021519380A JP 2021519380 A JP2021519380 A JP 2021519380A JP WO2020230666 A1 JPWO2020230666 A1 JP WO2020230666A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021519380A
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Japanese (ja)
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JP7560747B2 (ja
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Publication of JPWO2020230666A1 publication Critical patent/JPWO2020230666A1/ja
Application granted granted Critical
Publication of JP7560747B2 publication Critical patent/JP7560747B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/34—Source electrode or drain electrode programmed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/50—ROM only having transistors on different levels, e.g. 3D ROM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6735—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes having gates fully surrounding the channels, e.g. gate-all-around
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Landscapes

  • Semiconductor Memories (AREA)
JP2021519380A 2019-05-13 2020-05-01 半導体記憶装置 Active JP7560747B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019090699 2019-05-13
JP2019090699 2019-05-13
PCT/JP2020/018393 WO2020230666A1 (ja) 2019-05-13 2020-05-01 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPWO2020230666A1 true JPWO2020230666A1 (https=) 2020-11-19
JP7560747B2 JP7560747B2 (ja) 2024-10-03

Family

ID=73289101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021519380A Active JP7560747B2 (ja) 2019-05-13 2020-05-01 半導体記憶装置

Country Status (3)

Country Link
US (2) US12225719B2 (https=)
JP (1) JP7560747B2 (https=)
WO (1) WO2020230666A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023157724A1 (ja) * 2022-02-16 2023-08-24 株式会社ソシオネクスト 半導体記憶装置
WO2024018875A1 (ja) * 2022-07-21 2024-01-25 株式会社ソシオネクスト 半導体記憶装置
EP4451332A3 (en) * 2023-04-17 2025-01-01 Samsung Electronics Co., Ltd. Integrated circuit including read only memory (rom) cell
WO2026004616A1 (ja) * 2024-06-27 2026-01-02 株式会社ソシオネクスト 半導体記憶装置
WO2026053741A1 (ja) * 2024-09-03 2026-03-12 株式会社ソシオネクスト 半導体記憶装置および半導体集積回路装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7715246B1 (en) * 2008-06-27 2010-05-11 Juhan Kim Mask ROM with light bit line architecture
JP2011258898A (ja) * 2010-06-11 2011-12-22 Toshiba Corp 半導体装置およびその製造方法
US20160329313A1 (en) * 2014-06-23 2016-11-10 Synopsys, Inc. Cells having transistors and interconnects including nanowires or 2d material strips
JP2018026565A (ja) * 2016-08-10 2018-02-15 東京エレクトロン株式会社 半導体素子のための拡張領域
US20180151576A1 (en) * 2016-11-28 2018-05-31 Samsung Electronics Co., Ltd. Semiconductor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2749434B1 (fr) * 1996-05-31 1998-09-04 Dolphin Integration Sa Matrice de memoire rom compacte
CN108701653B (zh) * 2016-02-25 2022-07-29 株式会社索思未来 半导体集成电路装置
KR102228497B1 (ko) * 2016-07-19 2021-03-15 도쿄엘렉트론가부시키가이샤 3 차원 반도체 디바이스 및 그 제조 방법
US10756097B2 (en) * 2018-06-29 2020-08-25 International Business Machines Corporation Stacked vertical transistor-based mask-programmable ROM
US10720391B1 (en) * 2019-01-04 2020-07-21 Globalfoundries Inc. Method of forming a buried interconnect and the resulting devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7715246B1 (en) * 2008-06-27 2010-05-11 Juhan Kim Mask ROM with light bit line architecture
JP2011258898A (ja) * 2010-06-11 2011-12-22 Toshiba Corp 半導体装置およびその製造方法
US20160329313A1 (en) * 2014-06-23 2016-11-10 Synopsys, Inc. Cells having transistors and interconnects including nanowires or 2d material strips
JP2018026565A (ja) * 2016-08-10 2018-02-15 東京エレクトロン株式会社 半導体素子のための拡張領域
US20180151576A1 (en) * 2016-11-28 2018-05-31 Samsung Electronics Co., Ltd. Semiconductor devices

Also Published As

Publication number Publication date
US20250151268A1 (en) 2025-05-08
US12225719B2 (en) 2025-02-11
WO2020230666A1 (ja) 2020-11-19
US20220068942A1 (en) 2022-03-03
JP7560747B2 (ja) 2024-10-03

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