JPWO2020170411A1 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- JPWO2020170411A1 JPWO2020170411A1 JP2021501245A JP2021501245A JPWO2020170411A1 JP WO2020170411 A1 JPWO2020170411 A1 JP WO2020170411A1 JP 2021501245 A JP2021501245 A JP 2021501245A JP 2021501245 A JP2021501245 A JP 2021501245A JP WO2020170411 A1 JPWO2020170411 A1 JP WO2020170411A1
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Abstract
Description
以下、本実施の形態に関する半導体装置、および、半導体装置の製造方法について説明する。
図1は、本実施の形態に関する炭化珪素半導体装置の構成の例を概略的に示す平面図である。なお、図1における炭化珪素半導体装置は、半導体スイッチング素子であり、具体的には、SiC基板の上面に形成されたMOS構造を有する電界効果トランジスタ(炭化珪素 金属−酸化膜−半導体電界効果トランジスタ(metal−oxide−semiconductor field−effect transistor、すなわち、MOSFET)100)である。
次に、図5から図9を参照しつつ、本実施の形態に関する炭化珪素半導体装置の製造方法を説明する。なお、図5から図9は、本実施の形態に関する炭化珪素半導体装置の製造方法の例を示す断面図である。
図1に示された炭化珪素MOSFET100の平面図は、本実施の形態の効果を享受しうる構成の一例である。本実施の形態の効果は、内蔵ゲートインダクタンス280がゲートパッド11と活性領域におけるゲート電極7bとの間に形成されていれば、同様に得られる。
図11は、本実施の形態に関する炭化珪素MOSFET100Yの構成の他の変形例を概略的に示す平面図である。
本実施の形態に関する半導体装置、および、半導体装置の製造方法について説明する。なお、以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
図17は、本実施の形態に関する炭化珪素MOSFET100Zの構成の例を概略的に示す平面図である。第1の実施の形態に示された例とは異なり、内蔵ゲート抵抗25が省略され、ゲートパッド11Zと渦巻き状ゲート配線13Zとが直接接触し、かつ、広域ゲート配線12Zと渦巻き状ゲート配線13Zとが直接接触している。
本実施の形態に関する炭化珪素半導体装置の製造方法は、第1の実施の形態で説明された製造方法と主要な部分で同様であり、かつ、内蔵ゲート抵抗25が形成されないようにマスクパターンを適宜変更するものであるため、詳細な説明を省略する。
本実施の形態に関する電力変換装置、および、電力変換装置の製造方法について説明する。以下の説明においては、以上に記載された実施の形態で説明された構成要素と同様の構成要素については同じ符号を付して図示し、その詳細な説明については適宜省略するものとする。
本実施の形態は、以上に記載された実施の形態に関する半導体装置を電力変換装置に適用するものである。適用する電力変換装置は特定の用途のものに限定されるものではないが、以下では、三相のインバータに適用する場合について説明する。
なお、以上に記載された実施の形態では、半導体スイッチング素子としてMOSFETが説明されたが、半導体スイッチング素子は絶縁ゲート型バイポーラトランジスタ(insulated gate bipolar transistor、すなわち、IGBT)であってもよい。
Claims (13)
- 活性領域における第1のゲート電極(7b)と、
平面視で、前記活性領域とは異なる領域である第1の領域におけるゲートパッド(11、11Y、11Z)と、
前記第1のゲート電極(7b)と前記ゲートパッド(11、11Y、11Z)とを電気的に接続する第1のゲート配線(13、13Y、13Z)とを備え、
前記第1のゲート配線(13、13Y、13Z)は、渦巻き状に形成され、
前記第1のゲート配線(13、13Y、13Z)は、前記第1のゲート電極(7b)とは異なる種類の材料から構成される、
半導体装置(100、100Y、100Z)。 - 活性領域における第1のゲート電極(7b)と、
平面視で、前記活性領域とは異なる領域である第1の領域におけるゲートパッド(11、11Y、11Z)と、
前記第1のゲート電極(7b)と前記ゲートパッド(11、11Y、11Z)とを電気的に接続する第1のゲート配線(13、13Y、13Z)とを備え、
前記第1のゲート配線(13、13Y、13Z)は、渦巻き状に形成され、
前記第1のゲート配線(13、13Y、13Z)は、前記第1の領域に配置される、
半導体装置(100、100Y、100Z)。 - 前記第1のゲート配線(13、13Z)は、平面視で前記ゲートパッド(11、11Z)を囲む、
請求項1または請求項2に記載の半導体装置(100、100Z)。 - 活性領域における第1のゲート電極(7b)と、
平面視で、前記活性領域とは異なる領域である第1の領域におけるゲートパッド(11X)と、
前記第1のゲート電極(7b)と前記ゲートパッド(11X)とを電気的に接続する第1のゲート配線(13X)とを備え、
前記第1のゲート配線(13X)は、平面視で前記活性領域を囲み、かつ、閉塞していない、
半導体装置(100X)。 - 前記第1のゲート配線(13X)は、前記第1のゲート電極(7b)とは異なる種類の材料から構成される、
請求項4に記載の半導体装置(100X)。 - 前記第1のゲート配線(13X)は、前記第1の領域に配置される、
請求項4または請求項5に記載の半導体装置(100X)。 - 前記活性領域において、第1の絶縁膜(15)を介して前記第1のゲート電極(7b)を覆うソース電極(10)をさらに備え、
前記第1のゲート配線(13X)は、平面視で前記ソース電極(10)を囲む、
請求項4から請求項6のうちのいずれか1項に記載の半導体装置(100X)。 - 前記第1のゲート配線(13、13X、13Y、13Z)は、金属から構成される、
請求項1から請求項7のうちのいずれか1項に記載の半導体装置(100、100X、100Y、100Z)。 - 前記第1のゲート電極(7b)に接続される、前記第1の領域における第2のゲート電極(7a)と、
前記第2のゲート電極(7a)に接続される、前記第1の領域における第2のゲート配線(12、12X、12Y、12Z)とをさらに備える、
請求項1から請求項8のうちのいずれか1項に記載の半導体装置(100、100X、100Y、100Z)。 - 前記第1のゲート配線(13Z)は、前記ゲートパッド(11Z)および前記第2のゲート配線(12Z)に直接接続される、
請求項9に記載の半導体装置(100Z)。 - 前記第2のゲート電極(7a)を覆い、かつ、複数のコンタクトホール(23A、23B)を有する、前記第1の領域における第2の絶縁膜(15)をさらに備える、
請求項9に記載の半導体装置(100、100X、100Y)。 - 前記第1のゲート配線(13、13X、13Y)および前記第2のゲート配線(12、12X、12Y)は、いずれかの前記コンタクトホール(23A、23B)を介して前記第2のゲート電極(7a)と接続される、
請求項11に記載の半導体装置(100、100X、100Y)。 - 請求項1から請求項12のうちのいずれか1項に記載の半導体装置(100、100X、100Y、100Z)を複数備え、
複数の前記半導体装置(100、100X、100Y、100Z)は、互いに並列に接続される、
電力変換装置(2200)。
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