JPWO2020158808A1 - 電子部品実装用基体および電子装置 - Google Patents
電子部品実装用基体および電子装置 Download PDFInfo
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
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- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 239000000853 adhesive Substances 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
本開示のいくつかの例示的な実施形態について図面を参照して説明する。なお、以下の説明では、電子部品実装用基体1に電子部品101が実装された構成を電子装置100とする。本明細書において、電子部品実装用基体1および電子装置100は、便宜的に、直交座標系xyzを定義して説明する場合がある。また、本明細書において、z方向の正側を上方、負側を下方とし、上方にある面を上面、下方にある面を下面として説明する場合がある。
電子装置100は、電子部品実装用基体1と、電子部品実装用基体1に実装された電子部品101と、を備えている。
次に、本開示の一実施形態の電子部品実装用基体1および電子装置100の製造方法の一例について説明する。なお、下記で示す製造方法の一例は、多数個取り基体を用いた基体2の製造方法である。
2・・・・基体
21・・・第1絶縁層
211・・第1面
212・・第2面
22・・・第2絶縁層
221・・第3面
222・・第4面
23・・・第1辺
24・・・第2辺
41・・・第1ビア導体
42・・・第2ビア導体
43・・・第3ビア導体
60・・・実装領域
61・・・第1導体層
62・・・第2導体層
63・・・第3導体層
71・・・第1電極部
72・・・第2電極部
80・・・実装基板
100・・電子装置
101・・・電子部品
102・・・電子部品接合材
Claims (10)
- 第1面と該第1面の反対に位置する第2面とを備える第1絶縁層と、前記第2面に対向して重なる第3面と該第3面の反対に位置する第4面とを備える第2絶縁層と、を有する基体と、
第1電極部を有し、前記第1面に位置する第1導体層と、
前記第2面と前記第3面との間に位置する第2導体層と、
第2電極部を有し、前記第4面に位置する第3導体層と、
前記第1面から前記第2面にかけて貫通し、前記第1導体層と前記第2導体層とを接続する第1ビア導体と、
前記第3面から前記第4面にかけて貫通し、前記第2導体層と前記第3導体層とを接続する第2ビア導体と、を備え、
前記第1面に向かう平面透視で、前記第1電極部と前記第1ビア導体との距離D1は、前記第1電極部と前記第2ビア導体との距離D2よりも長く、前記平面透視で、前記第2電極部と前記第2ビア導体との距離D3は、前記第2電極部と前記第1ビア導体との距離D4よりも長い、電子部品実装用基体。 - 前記平面透視で、前記第1電極部と、前記第1ビア導体と、前記第2電極部と、前記第2ビア導体と、は仮想直線X上に配置される配置されている、請求項1に記載の電子部品実装用基体。
- 前記第1ビア導体および前記第2ビア導体をそれぞれ複数有する、請求項1または請求項2に記載の電子部品実装用基体。
- 前記第1導体層と前記第2導体層とは、前記第1ビア導体のみで接続される、請求項1〜請求項3のいずれか1つに記載の電子部品実装用基体。
- 前記第3面から前記第4面にかけて貫通し、前記第2導体層と前記第3導体層とを接続するとともに、前記平面透視で、前記第1ビア導体と重なって位置する第3ビア導体を有する、請求項1〜請求項4のいずれか1つに記載の電子部品実装用基体。
- 前記第2導体層と前記第3導体層とは、前記第2ビア導体のみで接続される、請求項1〜請求項4のいずれか1つに記載の電子部品実装用基体。
- 前記第1ビア導体は、前記平面透視で、第1方向に並び、
前記第2ビア導体は、前記平面透視で、前記第1ビア導体と離れているとともに前記第1方向に沿った第2方向に並ぶ、請求項3に記載の電子部品実装用基体。 - 前記第1ビア導体は、前記平面透視で、前記第1ビア導体のそれぞれの中心が仮想直線Aに沿って位置し、
前記第2ビア導体は、前記平面透視で、前記第2ビア導体のそれぞれの中心が仮想直線Bに沿って位置し、
前記仮想直線Aおよび前記仮想直線Bは平行である、請求項7に記載の電子部品実装用基体。 - 前記基体は、前記第1面に向かう平面視で、第1辺および該第1辺に対向する第2辺を有する矩形状であり、
前記仮想直線Aは前記第1辺に沿い、
前記仮想直線Bは前記第2辺に沿う、請求項8に記載の電子部品実装用基体。 - 請求項1〜請求項9のいずれか1つに記載の電子部品実装用基体と、
該電子部品実装用基体に接続された電子部品と、を備えたことを特徴とする電子装置。
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Application Number | Priority Date | Filing Date | Title |
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JP2019014098 | 2019-01-30 | ||
JP2019014098 | 2019-01-30 | ||
PCT/JP2020/003192 WO2020158808A1 (ja) | 2019-01-30 | 2020-01-29 | 電子部品実装用基体および電子装置 |
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JPWO2020158808A1 true JPWO2020158808A1 (ja) | 2021-11-25 |
JP7209749B2 JP7209749B2 (ja) | 2023-01-20 |
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Country | Link |
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US (1) | US20220084930A1 (ja) |
JP (1) | JP7209749B2 (ja) |
CN (1) | CN113348548A (ja) |
WO (1) | WO2020158808A1 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58119664A (ja) * | 1981-12-31 | 1983-07-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | チツプ・キヤリア |
JP2001119154A (ja) * | 1999-10-22 | 2001-04-27 | Nec Corp | 電磁干渉抑制部品および電磁干渉抑制回路 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5384434A (en) * | 1992-03-02 | 1995-01-24 | Murata Manufacturing Co., Ltd. | Multilayer ceramic circuit board |
JP4034483B2 (ja) * | 1999-09-24 | 2008-01-16 | 東光株式会社 | 積層型チップ部品の製造方法 |
JP2001339009A (ja) * | 2000-03-24 | 2001-12-07 | Ngk Spark Plug Co Ltd | 配線基板 |
JP4224109B2 (ja) * | 2007-03-02 | 2009-02-12 | コーア株式会社 | 積層体およびその製造方法 |
US8654539B2 (en) * | 2009-12-15 | 2014-02-18 | Ngk Spark Plug Co., Ltd. | Capacitor-incorporated substrate and component-incorporated wiring substrate |
JP5502624B2 (ja) * | 2010-07-08 | 2014-05-28 | 新光電気工業株式会社 | 配線基板の製造方法及び配線基板 |
US8723048B2 (en) * | 2010-11-09 | 2014-05-13 | Broadcom Corporation | Three-dimensional coiling via structure for impedance tuning of impedance discontinuity |
JP6105209B2 (ja) * | 2012-04-25 | 2017-03-29 | 京セラ株式会社 | 配線基板およびこれを用いた実装構造体 |
JP6385075B2 (ja) * | 2013-04-15 | 2018-09-05 | キヤノン株式会社 | プリント配線板、プリント回路板及び電子機器 |
WO2016129199A1 (ja) * | 2015-02-12 | 2016-08-18 | 日本電気株式会社 | 構造体および配線基板 |
KR101983630B1 (ko) * | 2016-01-22 | 2019-05-29 | 쿄세라 코포레이션 | 전자 부품 수납용 패키지, 멀티피스 배선 기판, 전자 장치 및 전자 모듈 |
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2020
- 2020-01-29 US US17/425,350 patent/US20220084930A1/en not_active Abandoned
- 2020-01-29 WO PCT/JP2020/003192 patent/WO2020158808A1/ja active Application Filing
- 2020-01-29 CN CN202080010958.2A patent/CN113348548A/zh active Pending
- 2020-01-29 JP JP2020569689A patent/JP7209749B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58119664A (ja) * | 1981-12-31 | 1983-07-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | チツプ・キヤリア |
JP2001119154A (ja) * | 1999-10-22 | 2001-04-27 | Nec Corp | 電磁干渉抑制部品および電磁干渉抑制回路 |
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CN113348548A (zh) | 2021-09-03 |
JP7209749B2 (ja) | 2023-01-20 |
US20220084930A1 (en) | 2022-03-17 |
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