JPWO2020077112A5 - - Google Patents
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- Publication number
- JPWO2020077112A5 JPWO2020077112A5 JP2021519654A JP2021519654A JPWO2020077112A5 JP WO2020077112 A5 JPWO2020077112 A5 JP WO2020077112A5 JP 2021519654 A JP2021519654 A JP 2021519654A JP 2021519654 A JP2021519654 A JP 2021519654A JP WO2020077112 A5 JPWO2020077112 A5 JP WO2020077112A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- layer
- recessed features
- recessed
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims 65
- 229910052751 metal Inorganic materials 0.000 claims 65
- 239000010410 layer Substances 0.000 claims 61
- 238000000034 method Methods 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 16
- 238000000151 deposition Methods 0.000 claims 14
- 229910044991 metal oxide Inorganic materials 0.000 claims 11
- 150000004706 metal oxides Chemical class 0.000 claims 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims 6
- 150000004767 nitrides Chemical class 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 5
- 229910052707 ruthenium Inorganic materials 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 238000007740 vapor deposition Methods 0.000 claims 5
- 239000002094 self assembled monolayer Substances 0.000 claims 4
- 239000013545 self-assembled monolayer Substances 0.000 claims 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- 229910052593 corundum Inorganic materials 0.000 claims 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 238000001465 metallisation Methods 0.000 claims 2
- 239000003607 modifier Substances 0.000 claims 2
- 238000005121 nitriding Methods 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 238000007781 pre-processing Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862744038P | 2018-10-10 | 2018-10-10 | |
| US62/744,038 | 2018-10-10 | ||
| PCT/US2019/055676 WO2020077112A1 (en) | 2018-10-10 | 2019-10-10 | Method for filling recessed features in semiconductor devices with a low-resistivity metal |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022504574A JP2022504574A (ja) | 2022-01-13 |
| JP2022504574A5 JP2022504574A5 (https=) | 2022-10-19 |
| JPWO2020077112A5 true JPWO2020077112A5 (https=) | 2022-10-19 |
| JP7406684B2 JP7406684B2 (ja) | 2023-12-28 |
Family
ID=70160709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021519654A Active JP7406684B2 (ja) | 2018-10-10 | 2019-10-10 | 半導体デバイス内の凹状特徴部を低抵抗率金属で充填する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11024535B2 (https=) |
| JP (1) | JP7406684B2 (https=) |
| KR (1) | KR102759932B1 (https=) |
| CN (1) | CN112805818B (https=) |
| TW (1) | TWI835883B (https=) |
| WO (1) | WO2020077112A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102759932B1 (ko) | 2018-10-10 | 2025-01-23 | 도쿄엘렉트론가부시키가이샤 | 반도체 소자의 함입형 형상부를 저-저항률 금속으로 충전하기 위한 방법 |
| US11823896B2 (en) * | 2019-02-22 | 2023-11-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Conductive structure formed by cyclic chemical vapor deposition |
| US12507408B2 (en) | 2020-03-12 | 2025-12-23 | Tokyo Electron Limited | Method and structures to reduce resistivity in three-dimensional structures for microelectronic workpieces using material deposited in recesses at edges of holes in a multilayer stack |
| US20220139776A1 (en) * | 2020-11-03 | 2022-05-05 | Tokyo Electron Limited | Method for filling recessed features in semiconductor devices with a low-resistivity metal |
| US20220254683A1 (en) * | 2021-02-05 | 2022-08-11 | Tokyo Electron Limited | Removal of stray ruthenium metal nuclei for selective ruthenium metal layer formation |
| US12237216B2 (en) * | 2021-03-16 | 2025-02-25 | Tokyo Electron Limited | Method for filling recessed features in semiconductor devices with a low-resistivity metal |
| JP2024523510A (ja) * | 2021-07-06 | 2024-06-28 | 東京エレクトロン株式会社 | 自己組織化単分子層を使用する選択的な膜形成 |
| US12598977B2 (en) * | 2021-12-21 | 2026-04-07 | Intel Corporation | Fill of vias in single and dual damascene structures using self-assembled monolayer |
| JP7803157B2 (ja) * | 2022-02-14 | 2026-01-21 | 東京エレクトロン株式会社 | 凹部にルテニウムを埋め込む方法、及び装置 |
| US12588435B2 (en) * | 2022-02-28 | 2026-03-24 | Tokyo Electron Limited | Selective inhibition for selective metal deposition |
| US20240431025A1 (en) * | 2023-06-26 | 2024-12-26 | International Business Machines Corporation | Corrosion resistant single damascene interconnects |
Family Cites Families (41)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS62216224A (ja) * | 1986-03-17 | 1987-09-22 | Fujitsu Ltd | タングステンの選択成長方法 |
| NL8801917A (nl) * | 1988-08-02 | 1990-03-01 | Hollandse Signaalapparaten Bv | Koerscorrectiesysteem voor in baan corrigeerbare voorwerpen. |
| JPH03132024A (ja) * | 1989-10-18 | 1991-06-05 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP3038875B2 (ja) * | 1990-10-18 | 2000-05-08 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH0513367A (ja) * | 1991-07-03 | 1993-01-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JPH05166754A (ja) * | 1991-12-18 | 1993-07-02 | Sharp Corp | 半導体装置の製造方法 |
| JPH0982798A (ja) * | 1995-09-12 | 1997-03-28 | Toshiba Corp | 半導体装置およびその製造方法 |
| US5723358A (en) * | 1996-04-29 | 1998-03-03 | Vlsi Technology, Inc. | Method of manufacturing amorphous silicon antifuse structures |
| US6040243A (en) * | 1999-09-20 | 2000-03-21 | Chartered Semiconductor Manufacturing Ltd. | Method to form copper damascene interconnects using a reverse barrier metal scheme to eliminate copper diffusion |
| TW463307B (en) | 2000-06-29 | 2001-11-11 | Mosel Vitelic Inc | Manufacturing method of dual damascene structure |
| US7141494B2 (en) | 2001-05-22 | 2006-11-28 | Novellus Systems, Inc. | Method for reducing tungsten film roughness and improving step coverage |
| US6787460B2 (en) * | 2002-01-14 | 2004-09-07 | Samsung Electronics Co., Ltd. | Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formed |
| KR100455382B1 (ko) * | 2002-03-12 | 2004-11-06 | 삼성전자주식회사 | 듀얼 다마신 구조를 가지는 반도체 소자의 금속 배선 형성방법 |
| US6797642B1 (en) * | 2002-10-08 | 2004-09-28 | Novellus Systems, Inc. | Method to improve barrier layer adhesion |
| US20040121583A1 (en) * | 2002-12-19 | 2004-06-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming capping barrier layer over copper feature |
| US7365001B2 (en) * | 2003-12-16 | 2008-04-29 | International Business Machines Corporation | Interconnect structures and methods of making thereof |
| KR100609049B1 (ko) * | 2004-12-06 | 2006-08-09 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 형성방법 |
| US20060246699A1 (en) * | 2005-03-18 | 2006-11-02 | Weidman Timothy W | Process for electroless copper deposition on a ruthenium seed |
| KR100640662B1 (ko) * | 2005-08-06 | 2006-11-01 | 삼성전자주식회사 | 장벽금속 스페이서를 구비하는 반도체 소자 및 그 제조방법 |
| KR20080001254A (ko) * | 2006-06-29 | 2008-01-03 | 삼성전자주식회사 | 반도체 소자의 금속 배선 형성 방법 |
| JP4299852B2 (ja) * | 2006-10-11 | 2009-07-22 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| US7659197B1 (en) * | 2007-09-21 | 2010-02-09 | Novellus Systems, Inc. | Selective resputtering of metal seed layers |
| US7772110B2 (en) * | 2007-09-28 | 2010-08-10 | Tokyo Electron Limited | Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing |
| JP5342811B2 (ja) * | 2008-06-09 | 2013-11-13 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| US8263502B2 (en) * | 2008-08-13 | 2012-09-11 | Synos Technology, Inc. | Forming substrate structure by filling recesses with deposition material |
| KR101604054B1 (ko) * | 2009-09-03 | 2016-03-16 | 삼성전자주식회사 | 반도체 소자 및 그 형성방법 |
| US8945305B2 (en) * | 2010-08-31 | 2015-02-03 | Micron Technology, Inc. | Methods of selectively forming a material using parylene coating |
| CN102543835B (zh) * | 2010-12-15 | 2015-05-13 | 中国科学院微电子研究所 | 开口的填充方法 |
| US20120213941A1 (en) | 2011-02-22 | 2012-08-23 | Varian Semiconductor Equipment Associates, Inc. | Ion-assisted plasma treatment of a three-dimensional structure |
| WO2013095433A1 (en) * | 2011-12-21 | 2013-06-27 | Intel Corporation | Electroless filled conductive structures |
| US9895715B2 (en) * | 2014-02-04 | 2018-02-20 | Asm Ip Holding B.V. | Selective deposition of metals, metal oxides, and dielectrics |
| US10049921B2 (en) * | 2014-08-20 | 2018-08-14 | Lam Research Corporation | Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor |
| US9553090B2 (en) * | 2015-05-29 | 2017-01-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and formation method of semiconductor device structure |
| KR102740084B1 (ko) * | 2015-10-15 | 2024-12-06 | 도쿄엘렉트론가부시키가이샤 | 상호접속부를 위한 선택적 상향식 금속 피처 충전 |
| US9899258B1 (en) * | 2016-09-30 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal liner overhang reduction and manufacturing method thereof |
| CN107978553B (zh) * | 2016-10-21 | 2020-12-18 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
| TWI750352B (zh) * | 2017-03-31 | 2021-12-21 | 日商東京威力科創股份有限公司 | 鍍膜處理方法，鍍膜處理系統及記憶媒體 |
| US10847413B2 (en) * | 2017-11-30 | 2020-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming contact plugs for semiconductor device |
| US10867905B2 (en) * | 2017-11-30 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structures and methods of forming the same |
| US11319334B2 (en) * | 2017-12-28 | 2022-05-03 | Intel Corporation | Site-selective metal plating onto a package dielectric |
| KR102759932B1 (ko) | 2018-10-10 | 2025-01-23 | 도쿄엘렉트론가부시키가이샤 | 반도체 소자의 함입형 형상부를 저-저항률 금속으로 충전하기 위한 방법 |
-
2019
- 2019-10-10 KR KR1020217012312A patent/KR102759932B1/ko active Active
- 2019-10-10 CN CN201980066266.7A patent/CN112805818B/zh active Active
- 2019-10-10 US US16/598,772 patent/US11024535B2/en active Active
- 2019-10-10 JP JP2021519654A patent/JP7406684B2/ja active Active
- 2019-10-10 WO PCT/US2019/055676 patent/WO2020077112A1/en not_active Ceased
- 2019-10-14 TW TW108136852A patent/TWI835883B/zh active
-
2021
- 2021-05-28 US US17/334,389 patent/US11621190B2/en active Active
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