TWI835883B - 以低電阻率金屬填充半導體元件中之凹陷特徵部的方法 - Google Patents

以低電阻率金屬填充半導體元件中之凹陷特徵部的方法 Download PDF

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TWI835883B
TWI835883B TW108136852A TW108136852A TWI835883B TW I835883 B TWI835883 B TW I835883B TW 108136852 A TW108136852 A TW 108136852A TW 108136852 A TW108136852 A TW 108136852A TW I835883 B TWI835883 B TW I835883B
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metal
layer
recessed feature
recessed
substrate
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TW108136852A
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TW202029286A (zh
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尤凱鴻
大衛 歐米拉
尼可拉斯 喬伊
吉亞納蘭江 帕塔奈克
羅伯特 克拉克
坎達巴拉 泰伯利
隆宏 袴田
科瑞 瓦伊達
赫里特 盧森克
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日商東京威力科創股份有限公司
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)
TW108136852A 2018-10-10 2019-10-14 以低電阻率金屬填充半導體元件中之凹陷特徵部的方法 TWI835883B (zh)

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US201862744038P 2018-10-10 2018-10-10
US62/744,038 2018-10-10

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TW202029286A TW202029286A (zh) 2020-08-01
TWI835883B true TWI835883B (zh) 2024-03-21

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US (2) US11024535B2 (https=)
JP (1) JP7406684B2 (https=)
KR (1) KR102759932B1 (https=)
CN (1) CN112805818B (https=)
TW (1) TWI835883B (https=)
WO (1) WO2020077112A1 (https=)

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US11823896B2 (en) * 2019-02-22 2023-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Conductive structure formed by cyclic chemical vapor deposition
US12507408B2 (en) 2020-03-12 2025-12-23 Tokyo Electron Limited Method and structures to reduce resistivity in three-dimensional structures for microelectronic workpieces using material deposited in recesses at edges of holes in a multilayer stack
US20220139776A1 (en) * 2020-11-03 2022-05-05 Tokyo Electron Limited Method for filling recessed features in semiconductor devices with a low-resistivity metal
US20220254683A1 (en) * 2021-02-05 2022-08-11 Tokyo Electron Limited Removal of stray ruthenium metal nuclei for selective ruthenium metal layer formation
US12237216B2 (en) * 2021-03-16 2025-02-25 Tokyo Electron Limited Method for filling recessed features in semiconductor devices with a low-resistivity metal
JP2024523510A (ja) * 2021-07-06 2024-06-28 東京エレクトロン株式会社 自己組織化単分子層を使用する選択的な膜形成
US12598977B2 (en) * 2021-12-21 2026-04-07 Intel Corporation Fill of vias in single and dual damascene structures using self-assembled monolayer
JP7803157B2 (ja) * 2022-02-14 2026-01-21 東京エレクトロン株式会社 凹部にルテニウムを埋め込む方法、及び装置
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