CN112805818B - 用低电阻率金属填充半导体器件中的凹陷特征的方法 - Google Patents

用低电阻率金属填充半导体器件中的凹陷特征的方法 Download PDF

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CN112805818B
CN112805818B CN201980066266.7A CN201980066266A CN112805818B CN 112805818 B CN112805818 B CN 112805818B CN 201980066266 A CN201980066266 A CN 201980066266A CN 112805818 B CN112805818 B CN 112805818B
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metal
layer
recessed
recessed feature
recessed features
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CN112805818A (zh
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尤凯鸿
大卫·奥梅亚拉
尼古拉斯·乔伊
焦纳兰詹·帕塔奈克
罗伯特·克拉克
坎达巴拉·塔皮利
袴田隆宏
考利·瓦吉达
赫里特·勒斯因克
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Tokyo Electron Ltd
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Chemical Vapour Deposition (AREA)
CN201980066266.7A 2018-10-10 2019-10-10 用低电阻率金属填充半导体器件中的凹陷特征的方法 Active CN112805818B (zh)

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US201862744038P 2018-10-10 2018-10-10
US62/744,038 2018-10-10
PCT/US2019/055676 WO2020077112A1 (en) 2018-10-10 2019-10-10 Method for filling recessed features in semiconductor devices with a low-resistivity metal

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CN112805818A CN112805818A (zh) 2021-05-14
CN112805818B true CN112805818B (zh) 2024-10-18

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US (2) US11024535B2 (https=)
JP (1) JP7406684B2 (https=)
KR (1) KR102759932B1 (https=)
CN (1) CN112805818B (https=)
TW (1) TWI835883B (https=)
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