JP7369895B2 - 高度なコンタクトにおけるキャップ層形成のためのエリア選択的堆積 - Google Patents
高度なコンタクトにおけるキャップ層形成のためのエリア選択的堆積 Download PDFInfo
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- JP7369895B2 JP7369895B2 JP2020559409A JP2020559409A JP7369895B2 JP 7369895 B2 JP7369895 B2 JP 7369895B2 JP 2020559409 A JP2020559409 A JP 2020559409A JP 2020559409 A JP2020559409 A JP 2020559409A JP 7369895 B2 JP7369895 B2 JP 7369895B2
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- 230000008021 deposition Effects 0.000 title claims description 25
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 229910052751 metal Inorganic materials 0.000 claims description 86
- 239000002184 metal Substances 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000151 deposition Methods 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 39
- 229910044991 metal oxide Inorganic materials 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910004541 SiN Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 238000005019 vapor deposition process Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims 2
- 239000010936 titanium Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 27
- 239000002243 precursor Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 7
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ORJFXWYTRPGGRK-UHFFFAOYSA-N hydroxy-tris(2-methylbutan-2-yloxy)silane Chemical compound CCC(C)(C)O[Si](O)(OC(C)(C)CC)OC(C)(C)CC ORJFXWYTRPGGRK-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910011208 Ti—N Inorganic materials 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- -1 alkylamine silanes Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- MBMITMZVBNZJTQ-UHFFFAOYSA-N hydroxy-bis[(2-methylpropan-2-yl)oxy]-propan-2-yloxysilane Chemical compound CC(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C MBMITMZVBNZJTQ-UHFFFAOYSA-N 0.000 description 1
- HLDBBQREZCVBMA-UHFFFAOYSA-N hydroxy-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C HLDBBQREZCVBMA-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910006400 μ-Cl Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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Description
本出願は、2018年4月27日に出願された米国仮特許出願第62/663,916号明細書に関連し、且つそれに対する優先権を主張するものであり、その内容全体が参照により本明細書に援用される。
Claims (12)
- 第1の誘電体層及び第1の金属層を含む平坦化された基板を提供するステップと、
前記第1の金属層の表面を酸化させて酸化金属層を形成するステップと、
前記酸化金属層上に第2の誘電体層を選択的に堆積させるステップと、
を含む、基板処理方法。 - 前記第1の金属層は、タングステン(W)金属、ルテニウム(Ru)金属、コバルト(Co)金属、モリブデン(Mo)及びそれらの組み合わせからなる群から選択される、請求項1に記載の方法。
- 前記第1の金属層は、W金属を含み、
前記酸化させるステップでは、体積の増加を伴う酸化W金属層が形成され、該酸化W金属層は、前記第1の金属層及び前記第1の誘電体層の水平面の上方に延在する、請求項2に記載の方法。 - 前記第2の誘電体層を選択的に堆積させるステップは、前記平坦化された基板を、空間気相堆積プロセス中、堆積ガスを分配するガス入口の下方に移動させるステップを含み、前記堆積ガスは、前記第1の誘電体層の表面の上方に延在する前記酸化金属層に優先的に曝露される、請求項1に記載の方法。
- 前記第2の誘電体層は、TiO2、HfO2、ZrO2、Al2O3、SiO2、SiN及びそれらの組み合わせからなる群から選択される、請求項1に記載の方法。
- 前記第2の誘電体層は、金属酸化物又は金属窒化物からなる群から選択される、請求項1に記載の方法。
- 前記第2の誘電体層を後続のエッチングプロセスのためのハードマスクとして使用して、前記第1の誘電体層に、完全自己整合ビア、自己整合コンタクト、スーパービア又は自己整合ゲートコンタクトを形成するステップをさらに含む、請求項1に記載の方法。
- 前記第1の金属層の前記表面を酸化させる前に、前記第1の金属層の上面の下方に、前記第1の誘電体層を凹ませるステップをさらに含む、請求項1に記載の方法。
- 第1の誘電体層及び第1の金属層を含む平坦化された基板を提供するステップと、
前記第1の金属層の上面の下方に、前記第1の誘電体層を凹ませるステップと、
前記第1の金属層の表面を酸化させ、酸化金属層を形成するステップと、
前記酸化金属層上に第2の誘電体層を選択的に堆積させるステップと、
前記第2の誘電体層を後続のエッチングプロセスのためのハードマスクとして使用して、前記第1の誘電体層に、完全自己整合ビア、自己整合コンタクト、スーパービア又は自己整合ゲートコンタクトを形成するステップと、
を含む、基板処理方法。 - 前記第2の誘電体層を前記選択的に堆積させるステップは、前記平坦化された基板を、空間気相堆積プロセス中、堆積ガスを分配するガス入口の下方に移動させるステップを含み、前記堆積ガスは、前記第1の誘電体層の表面の上方に延在する前記第1の金属層に優先的に曝露される、請求項9に記載の方法。
- 前記第1の金属層は、タングステン(W)金属、ルテニウム(Ru)金属、コバルト(Co)金属、モリブデン及びそれらの組み合わせからなる群から選択される、請求項9に記載の方法。
- 前記第2の誘電体層は、TiO2、HfO2、ZrO2、Al2O3、SiO2、SiN及びそれらの組み合わせからなる群から選択される、請求項9に記載の方法。
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PCT/US2019/029444 WO2019210234A1 (en) | 2018-04-27 | 2019-04-26 | Area selective deposition for cap layer formation in advanced contacts |
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