JP2021522680A5 - - Google Patents

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Publication number
JP2021522680A5
JP2021522680A5 JP2020559409A JP2020559409A JP2021522680A5 JP 2021522680 A5 JP2021522680 A5 JP 2021522680A5 JP 2020559409 A JP2020559409 A JP 2020559409A JP 2020559409 A JP2020559409 A JP 2020559409A JP 2021522680 A5 JP2021522680 A5 JP 2021522680A5
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JP
Japan
Prior art keywords
metal
dielectric layer
layer
steps include
metal layer
Prior art date
Application number
JP2020559409A
Other languages
English (en)
Japanese (ja)
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JP7369895B2 (ja
JP2021522680A (ja
JPWO2019210234A5 (https=
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Priority claimed from PCT/US2019/029444 external-priority patent/WO2019210234A1/en
Publication of JP2021522680A publication Critical patent/JP2021522680A/ja
Publication of JP2021522680A5 publication Critical patent/JP2021522680A5/ja
Publication of JPWO2019210234A5 publication Critical patent/JPWO2019210234A5/ja
Priority to JP2023075430A priority Critical patent/JP7541430B2/ja
Application granted granted Critical
Publication of JP7369895B2 publication Critical patent/JP7369895B2/ja
Active legal-status Critical Current
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JP2020559409A 2018-04-27 2019-04-26 高度なコンタクトにおけるキャップ層形成のためのエリア選択的堆積 Active JP7369895B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023075430A JP7541430B2 (ja) 2018-04-27 2023-05-01 高度なコンタクトにおけるキャップ層形成のためのエリア選択的堆積

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862663916P 2018-04-27 2018-04-27
US62/663,916 2018-04-27
PCT/US2019/029444 WO2019210234A1 (en) 2018-04-27 2019-04-26 Area selective deposition for cap layer formation in advanced contacts

Related Child Applications (1)

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JP2023075430A Division JP7541430B2 (ja) 2018-04-27 2023-05-01 高度なコンタクトにおけるキャップ層形成のためのエリア選択的堆積

Publications (4)

Publication Number Publication Date
JP2021522680A JP2021522680A (ja) 2021-08-30
JP2021522680A5 true JP2021522680A5 (https=) 2022-01-18
JPWO2019210234A5 JPWO2019210234A5 (https=) 2022-01-18
JP7369895B2 JP7369895B2 (ja) 2023-10-27

Family

ID=68292714

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020559409A Active JP7369895B2 (ja) 2018-04-27 2019-04-26 高度なコンタクトにおけるキャップ層形成のためのエリア選択的堆積
JP2023075430A Active JP7541430B2 (ja) 2018-04-27 2023-05-01 高度なコンタクトにおけるキャップ層形成のためのエリア選択的堆積

Family Applications After (1)

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JP2023075430A Active JP7541430B2 (ja) 2018-04-27 2023-05-01 高度なコンタクトにおけるキャップ層形成のためのエリア選択的堆積

Country Status (5)

Country Link
US (1) US11170992B2 (https=)
JP (2) JP7369895B2 (https=)
KR (1) KR102742954B1 (https=)
TW (1) TWI894126B (https=)
WO (1) WO2019210234A1 (https=)

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US12327764B2 (en) 2021-07-30 2025-06-10 Applied Materials, Inc. Two-dimension self-aligned scheme with subtractive metal etch
KR20230074952A (ko) 2021-11-22 2023-05-31 삼성전자주식회사 커패시터 구조체를 포함하는 반도체 장치 및 이의 제조 방법
JP2024163650A (ja) * 2023-05-12 2024-11-22 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102901082B1 (ko) * 2023-08-17 2025-12-16 한양대학교 에리카산학협력단 영역 선택적 원자층 증착법, 이를 위한 장치, 및 이를 통해 제조된 hzo 물질막 구조체

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