JPWO2019229795A1 - 増幅器 - Google Patents
増幅器 Download PDFInfo
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- JPWO2019229795A1 JPWO2019229795A1 JP2018552258A JP2018552258A JPWO2019229795A1 JP WO2019229795 A1 JPWO2019229795 A1 JP WO2019229795A1 JP 2018552258 A JP2018552258 A JP 2018552258A JP 2018552258 A JP2018552258 A JP 2018552258A JP WO2019229795 A1 JPWO2019229795 A1 JP WO2019229795A1
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- 230000003321 amplification Effects 0.000 claims abstract description 29
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
- H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
- H03F3/604—Combinations of several amplifiers using FET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6611—Wire connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/318—A matching circuit being used as coupling element between two amplifying stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
図1は、実施の形態1に係る増幅器の平面図である。この増幅器は、例えばマイクロ波帯からミリ波帯で高周波信号を増幅する高周波電力増幅器として機能する。この増幅器は、例えば高周波信号が入力される入力端子11を備えている。入力端子11はボンディングワイヤ12によって入力整合回路13に接続されている。入力整合回路13は例えば、絶縁基板とその上に設けられた金属パターンを有する。
L1=L+M
L2=L+2M
図4は、実施の形態2に係る増幅器の平面図である。この増幅器は、第1ダミートランジスタ30aと第2ダミートランジスタ30bと増幅用トランジスタ16a、16b、16c、16dを流れるRF電流が一致するように、第1第2ダミートランジスタ30a、30bのトランジスタ構造を最適化したものである。すなわち、第1ダミートランジスタ30aと第2ダミートランジスタ30bの構造を、増幅用トランジスタ16a、16b、16c、16dの構造と相違させることで、第1ダミートランジスタ30aと第2ダミートランジスタ30bに流れる電流を、増幅用トランジスタ16a、16b、16c、16dに流れる電流に一致させた。
図5は、実施の形態3に係る増幅器の平面図である。この増幅器では、増幅用トランジスタとダミートランジスタは交互に並べられている。図5には、第1ダミートランジスタ40a、増幅用トランジスタ42a、第2ダミートランジスタ40b、追加増幅用トランジスタ42b及び第3ダミートランジスタ40cがこの順に一列に並んだ構成が示されている。第1ダミートランジスタ40a、増幅用トランジスタ42a、第2ダミートランジスタ40b、追加増幅用トランジスタ42b及び第3ダミートランジスタ40cは、それぞれ入力整合回路から信号を受ける。そして、増幅用トランジスタ42aと追加増幅用トランジスタ42bの出力信号が、出力整合回路19に出力され、出力端子21に伝送される。
Claims (7)
- 入力整合回路と、
前記入力整合回路から信号を受ける少なくとも1つの増幅用トランジスタと、
前記入力整合回路から信号を受ける第1ダミートランジスタと、
前記入力整合回路から信号を受ける第2ダミートランジスタと、
前記増幅用トランジスタの出力を出力する出力整合回路と、を備え、
前記増幅用トランジスタは、前記第1ダミートランジスタと前記第2ダミートランジスタに挟まれ、
前記増幅用トランジスタ、前記第1ダミートランジスタ及び前記第2ダミートランジスタは、前記入力整合回路に沿って一列に設けられたことを特徴とする増幅器。 - 前記増幅用トランジスタ、前記第1ダミートランジスタ及び前記第2ダミートランジスタの構造は同じであることを特徴とする請求項1に記載の増幅器。
- 前記第1ダミートランジスタと前記第2ダミートランジスタの出力を遮断する遮断回路を備えたことを特徴とする請求項1又は2に記載の増幅器。
- 前記遮断回路は、LC整合回路とチョークコイルを有することを特徴とする請求項3に記載の増幅器。
- 前記第1ダミートランジスタと前記第2ダミートランジスタの構造を、前記増幅用トランジスタの構造と相違させることで、前記第1ダミートランジスタと前記第2ダミートランジスタに流れる電流を、前記増幅用トランジスタに流れる電流に一致させたことを特徴とする請求項1に記載の増幅器。
- 前記入力整合回路から信号を受け、前記出力整合回路に信号を出力する追加増幅用トランジスタと、
前記入力整合回路から信号を受ける第3ダミートランジスタと、を備え、
前記追加増幅用トランジスタは、前記第2ダミートランジスタと前記第3ダミートランジスタに挟まれ、
前記第1ダミートランジスタ、前記第2ダミートランジスタ及び前記第3ダミートランジスタは、マルチフィンガー構造を有するトランジスタであることを特徴とする請求項1から4のいずれか1項に記載の増幅器。 - 前記入力整合回路に、前記第1ダミートランジスタ、前記第2ダミートランジスタ及び前記第3ダミートランジスタのインピーダンス調整部を設けたことを特徴とする請求項6に記載の増幅器。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2018/020315 WO2019229795A1 (ja) | 2018-05-28 | 2018-05-28 | 増幅器 |
Publications (2)
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JP6566148B1 JP6566148B1 (ja) | 2019-08-28 |
JPWO2019229795A1 true JPWO2019229795A1 (ja) | 2020-06-25 |
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ID=67766598
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JP2018552258A Active JP6566148B1 (ja) | 2018-05-28 | 2018-05-28 | 増幅器 |
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US (1) | US11496102B2 (ja) |
JP (1) | JP6566148B1 (ja) |
CN (1) | CN112154603A (ja) |
DE (1) | DE112018007674T5 (ja) |
WO (1) | WO2019229795A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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NL2029316B1 (en) * | 2021-10-04 | 2023-04-13 | Ampleon Netherlands Bv | Power amplifier and Doherty amplifier comprising the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06310955A (ja) | 1993-04-22 | 1994-11-04 | Fujitsu Ltd | 高出力電界効果トランジスタ |
JPH0774549A (ja) | 1993-08-31 | 1995-03-17 | Toyota Central Res & Dev Lab Inc | 高効率線形増幅器 |
JPH08102630A (ja) | 1994-10-03 | 1996-04-16 | Mitsubishi Electric Corp | 高周波集積回路 |
EP1532731B1 (en) | 2002-08-19 | 2011-09-21 | Nxp B.V. | High power doherty amplifier |
JP2010021961A (ja) | 2008-07-14 | 2010-01-28 | Sumitomo Electric Ind Ltd | 増幅器 |
US8431973B2 (en) * | 2008-12-10 | 2013-04-30 | Kabushiki Kaisha Toshiba | High frequency semiconductor device |
JP2011171697A (ja) | 2010-01-22 | 2011-09-01 | Toshiba Corp | 高周波半導体装置 |
JP2013038603A (ja) * | 2011-08-08 | 2013-02-21 | Renesas Electronics Corp | 全差動増幅器 |
US11349438B2 (en) * | 2019-12-30 | 2022-05-31 | Nxp Usa, Inc. | Power amplifier packages containing multi-path integrated passive devices |
-
2018
- 2018-05-28 DE DE112018007674.1T patent/DE112018007674T5/de not_active Withdrawn
- 2018-05-28 CN CN201880093657.3A patent/CN112154603A/zh active Pending
- 2018-05-28 WO PCT/JP2018/020315 patent/WO2019229795A1/ja active Application Filing
- 2018-05-28 JP JP2018552258A patent/JP6566148B1/ja active Active
- 2018-05-28 US US17/045,238 patent/US11496102B2/en active Active
Also Published As
Publication number | Publication date |
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US11496102B2 (en) | 2022-11-08 |
US20210167741A1 (en) | 2021-06-03 |
DE112018007674T5 (de) | 2021-02-25 |
CN112154603A (zh) | 2020-12-29 |
WO2019229795A1 (ja) | 2019-12-05 |
JP6566148B1 (ja) | 2019-08-28 |
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