JPWO2019220940A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2019220940A1 JPWO2019220940A1 JP2020519565A JP2020519565A JPWO2019220940A1 JP WO2019220940 A1 JPWO2019220940 A1 JP WO2019220940A1 JP 2020519565 A JP2020519565 A JP 2020519565A JP 2020519565 A JP2020519565 A JP 2020519565A JP WO2019220940 A1 JPWO2019220940 A1 JP WO2019220940A1
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- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
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- 239000005368 silicate glass Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
特許文献1 WO2012−169053号
特許文献2 特開2009−021557号公報
Claims (17)
- 第1導電型のドリフト領域を有する半導体基板と、
前記半導体基板の下面に露出した第2導電型のコレクタ領域を有するトランジスタ部と、
前記半導体基板の下面に露出した第1導電型のカソード領域を有し、上面視の配列方向において前記トランジスタ部と並んで設けられたダイオード部と
を備え、
前記トランジスタ部および前記ダイオード部は、それぞれ、
前記半導体基板の上面から前記ドリフト領域まで達して設けられ、前記配列方向に複数配列されたトレンチ部と、
前記トレンチ部の内壁に形成された絶縁部と、
前記トレンチ部の内部に設けられ、前記絶縁部により前記トレンチ部の内壁と絶縁された導電部と、
前記配列方向において前記トレンチ部の間に配置され、前記配列方向においてそれぞれ予め定められたメサ幅を有する複数のメサ部と、
前記半導体基板の上面において前記トレンチ部の一部を覆って設けられ、且つ、一以上の前記メサ部上面を露出させるコンタクトホールが設けられた層間絶縁膜と、
前記コンタクトホールを介して前記メサ部と接する第1電極と、
を有し、
前記トランジスタ部のメサ部は、前記ダイオード部の最も近くに配置された2つ以上のT側メサ部を備え、
前記ダイオード部のメサ部は、前記トランジスタ部の最も近くに配置された1つ以上のD側メサ部を備え、
前記トランジスタ部において前記第1電極と電気的に接続するメサ部の最大のメサ幅は、前記T側メサ部のメサ幅および前記D側メサ部のメサ幅のいずれよりも大きい半導体装置。 - 前記トランジスタ部および前記ダイオード部の境界に配置された前記T側メサ部および前記D側メサ部の少なくとも一方は、前記トランジスタ部および前記ダイオード部に含まれる複数の前記メサ部において最小の前記メサ幅を有する
請求項1に記載の半導体装置。 - 前記T側メサ部および前記D側メサ部の前記メサ幅は、前記トランジスタ部において前記配列方向の中央に配置された前記メサ部の前記メサ幅よりも小さい
請求項1または2に記載の半導体装置。 - 前記トランジスタ部は、前記トレンチ部としてゲートトレンチ部およびダミートレンチ部を有し、
前記T側メサ部および前記D側メサ部は、前記ダミートレンチ部の間に配置されている
請求項1から3のいずれか一項に記載の半導体装置。 - 前記T側メサ部および前記D側メサ部の少なくとも一方に接する前記トレンチ部のうちの、少なくとも一つの前記トレンチ部は、前記層間絶縁膜に覆われておらず、前記導電部が前記第1電極に接する
請求項4に記載の半導体装置。 - 2つの前記T側メサ部の間に配置された前記トレンチ部と、2つの前記D側メサ部の間に配置された前記トレンチ部と、前記T側メサ部および前記D側メサ部の間に配置された前記トレンチ部は、前記層間絶縁膜に覆われておらず、前記導電部が前記第1電極に接する
請求項5に記載の半導体装置。 - 前記T側メサ部と、前記T側メサ部よりもメサ幅の大きい前記メサ部との間に配置された前記ダミートレンチ部は、前記層間絶縁膜に覆われている
請求項5または6に記載の半導体装置。 - 前記ダイオード部の全ての前記トレンチ部は、前記層間絶縁膜に覆われておらず、前記導電部が前記第1電極に接する
請求項5から7のいずれか一項に記載の半導体装置。 - 前記ダイオード部の前記メサ部は、全て前記D側メサ部である
請求項8に記載の半導体装置。 - 前記ダイオード部の前記配列方向の中央に配置された前記メサ部は、前記ダイオード部において前記トランジスタ部の最も近くに配置された前記D側メサ部よりも前記メサ幅が大きい
請求項5から8のいずれか一項に記載の半導体装置。 - 前記トランジスタ部の少なくとも一部の前記メサ部は、
前記ゲートトレンチ部に接して配置され、且つ、前記半導体基板の上面に露出した第1導電型のエミッタ領域と、
前記エミッタ領域と前記ドリフト領域との間に設けられた、第2導電型のベース領域と、
前記半導体基板の上面に露出し、前記ベース領域よりもドーピング濃度の高い第2導電型のコンタクト領域と、
前記半導体基板の上面に露出し、前記コンタクト領域よりもドーピング濃度の高いプラグ領域と
を有し、
前記ダイオード部における前記D側メサ部には前記プラグ領域が設けられていない
請求項8から10のいずれか一項に記載の半導体装置。 - 前記トランジスタ部は、前記ゲートトレンチ部に接して配置され、且つ、前記半導体基板の上面に露出した第1導電型のエミッタ領域が設けられた第1のメサ部を有し、
前記トランジスタ部の前記T側メサ部の少なくとも一部は、各メサ部の面積に対して前記半導体基板の上面に露出した第2導電型の領域の面積割合が、前記第1のメサ部の前記面積割合よりも大きいキャリア引抜メサ部である
請求項5から11のいずれか一項に記載の半導体装置。 - 前記キャリア引抜メサ部に接する前記トレンチ部は、前記層間絶縁膜に覆われていない
請求項12に記載の半導体装置。 - 前記ダイオード部は、前記半導体基板の上面側に、ライフタイム制御領域を有し、
前記ライフタイム制御領域は、前記トランジスタ部の前記T側メサ部の少なくとも一部にも設けられている
請求項1から13のいずれか一項に記載の半導体装置。 - 前記ダイオード部および前記トランジスタ部のそれぞれは、前記半導体基板の上面側に、ライフタイム制御領域を有し、
前記配列方向において、前記ダイオード部の前記ライフタイム制御領域と、前記トランジスタ部の前記ライフタイム制御領域との間に、前記ライフタイム制御領域よりも欠陥密度の小さい低欠陥領域が設けられている
請求項1から13のいずれか一項に記載の半導体装置。 - 前記低欠陥領域は、前記ダイオード部および前記トランジスタ部の境界を含む範囲に設けられている
請求項15に記載の半導体装置。 - 前記トランジスタ部の少なくとも一部の前記メサ部は、
前記半導体基板の上面に露出した第1導電型のエミッタ領域と、
前記エミッタ領域と前記ドリフト領域との間に設けられた、第2導電型のベース領域と、
前記ベース領域と前記ドリフト領域との間に設けられ、前記ドリフト領域よりもドーピング濃度の高い蓄積領域と
を有し、
前記T側メサ部における前記蓄積領域のドーピング濃度の深さ方向における積分値は、他の前記メサ部における前記蓄積領域のドーピング濃度の深さ方向における積分値よりも高い
請求項1から16のいずれか一項に記載の半導体装置。
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