JP2022016169A - 半導体装置 - Google Patents
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- JP2022016169A JP2022016169A JP2020119493A JP2020119493A JP2022016169A JP 2022016169 A JP2022016169 A JP 2022016169A JP 2020119493 A JP2020119493 A JP 2020119493A JP 2020119493 A JP2020119493 A JP 2020119493A JP 2022016169 A JP2022016169 A JP 2022016169A
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Abstract
【解決手段】活性領域およびエッジ領域を備える半導体装置であって、半導体基板に設けられた第1導電型のドリフト領域と、ドリフト領域の上方に設けられた第2導電型のベース領域と、活性領域において、ドリフト領域の下方に設けられた第2導電型の第1コレクタ領域と、エッジ領域において、ドリフト領域の下方に設けられた第2導電型の第2コレクタ領域とを備え、第1コレクタ領域のドーピング濃度は、第2コレクタ領域のドーピング濃度よりも大きく、上面視において、第1コレクタ領域の面積は、第2コレクタ領域の面積と同一または第2コレクタ領域の面積よりも大きい半導体装置を提供する。
【選択図】図2
Description
特許文献1 特開2018-133493号公報
特許文献2 特開2019-12725号公報
Claims (11)
- 活性領域およびエッジ領域を備える半導体装置であって、
半導体基板に設けられた第1導電型のドリフト領域と、
前記ドリフト領域の上方に設けられた第2導電型のベース領域と、
前記活性領域において、前記ドリフト領域の下方に設けられた第2導電型の第1コレクタ領域と、
前記エッジ領域において、前記ドリフト領域の下方に設けられた第2導電型の第2コレクタ領域と
を備え、
前記第1コレクタ領域のドーピング濃度は、前記第2コレクタ領域のドーピング濃度よりも大きく、
上面視において、前記第1コレクタ領域の面積は、前記第2コレクタ領域の面積と同一または前記第2コレクタ領域の面積よりも大きい
半導体装置。 - 前記第1コレクタ領域のドーピング濃度は、1E16cm-3以上、5E18cm-3以下である
請求項1に記載の半導体装置。 - 前記第2コレクタ領域のドーピング濃度は、1E16cm-3以上、5E18cm-3以下である
請求項1または2に記載の半導体装置。 - 上面視において、前記活性領域と前記エッジ領域との間に設けられた中間領域を備え、
前記第1コレクタ領域は、上面視において、前記活性領域から前記中間領域に延伸して設けられる
請求項1から3のいずれか一項に記載の半導体装置。 - 前記第1コレクタ領域は、上面視において、前記活性領域の内側に設けられる
請求項1から3のいずれか一項に記載の半導体装置。 - 前記半導体基板の上方に設けられ、前記半導体基板のおもて面と電気的に接続されたエミッタ電極と、
前記半導体基板の上方に設けられ、ゲート電位に設定するためのゲート金属層と
を備え、
前記半導体基板の外終端から前記第2コレクタ領域の端部までの距離である幅Bは、前記半導体基板の外終端から前記ゲート金属層の端部までの距離である幅Aよりも大きい
請求項1から5のいずれか一項に記載の半導体装置。 - 前記第2コレクタ領域のドーピング濃度は、前記第1コレクタ領域のドーピング濃度の0.85倍以下である
請求項6に記載の半導体装置。 - 前記幅Bと前記幅Aとの差は、10μmよりも大きい
請求項6に記載の半導体装置。 - 前記第2コレクタ領域のドーピング濃度は、前記第1コレクタ領域のドーピング濃度の0.85倍以上、0.9倍以下である
請求項8に記載の半導体装置。 - 前記半導体基板の深さ方向における厚みTは、0.1<α<0.5とした場合に、B-A<αTを満たす
請求項6から9のいずれか一項に記載の半導体装置。 - 前記エッジ領域における前記ドリフト領域の上方に設けられた第2導電型のガードリング部と、
前記エッジ領域における前記ドリフト領域の上方において、前記ガードリング部よりも前記半導体基板の外終端側に設けられたチャネルストッパ領域と
を備える
請求項1から10のいずれか一項に記載の半導体装置。
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CN202110575884.3A CN113921587A (zh) | 2020-07-10 | 2021-05-26 | 半导体装置 |
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