JPWO2019082333A1 - 電子部品 - Google Patents
電子部品 Download PDFInfo
- Publication number
- JPWO2019082333A1 JPWO2019082333A1 JP2019549770A JP2019549770A JPWO2019082333A1 JP WO2019082333 A1 JPWO2019082333 A1 JP WO2019082333A1 JP 2019549770 A JP2019549770 A JP 2019549770A JP 2019549770 A JP2019549770 A JP 2019549770A JP WO2019082333 A1 JPWO2019082333 A1 JP WO2019082333A1
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- insulating
- heat dissipation
- connection body
- component according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/3701—Shape
- H01L2224/37012—Cross-sectional shape
- H01L2224/37013—Cross-sectional shape being non uniform along the connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40105—Connecting bonding areas at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/40175—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/404—Connecting portions
- H01L2224/40475—Connecting portions connected to auxiliary connecting means on the bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/404—Connecting portions
- H01L2224/40475—Connecting portions connected to auxiliary connecting means on the bonding areas
- H01L2224/40499—Material of the auxiliary connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73263—Layer and strap connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
本発明の概念1による電子部品は、
ベースと、
前記ベースの一方側に設けられた電子素子と、
電子素子の一方側に設けられた接続体と、
前記接続体の一方側に設けられた放熱ブロックと、
前記接続体と前記放熱ブロックとの間に設けられた絶縁部と、
前記電子素子、前記接続体及び前記絶縁部を封止する封止部と、
を備え、
前記ベースの他方側の面の少なくとも一部が前記封止部から露出し、
前記放熱ブロックの一方側の面の少なくとも一部が前記封止部から露出してもよい。
本発明の概念1による電子部品において、
前記接続体の先端部は屈曲部を介して他方側に曲げられ、
前記先端部の一方側に前記絶縁部が設けられてもよい。
本発明の概念1又は2による電子部品において、
前記接続体の先端部は凹部を有し、
前記凹部内に前記絶縁部が設けられてもよい。
本発明の概念1乃至3のいずれか1つによる電子部品において、
前記放熱ブロックは、放熱ブロック本体部と、前記放熱ブロック本体部から他方側に延びた延在部とを有し、
前記延在部は前記接続体の先端部の一方側に設けられ、
前記放熱ブロック本体部の一方側の面は前記封止部から露出してもよい。
本発明の概念4による電子部品において、
前記接続体の先端部は凹部を有し、
前記凹部内に前記絶縁部及び前記延在部が設けられてもよい。
本発明の概念1乃至5のいずれか1つによる電子部品において、
前記絶縁部は放熱絶縁シート又は放熱絶縁材料であってもよい。
本発明の概念1乃至6のいずれか1つによる電子部品において、
前記絶縁部は放熱絶縁性を有する弾性部材であってもよい。
本発明の概念7による電子部品において、
前記絶縁部は、前記接続体の先端部の厚みの1/5〜1/1の厚みを有してもよい。
本発明の概念1乃至8のいずれか1つによる電子部品において、
前記接続体の基端部は、前記封止部から外方に露出する端子の一方側の面に導電性接着剤を介して当接してもよい。
本発明の概念1乃至9のいずれか1つによる電子部品において、
前記封止部の一方側から前記放熱ブロックだけが露出してもよい。
本発明の概念1乃至10のいずれか1つによる電子部品において、
前記ベース、前記放熱ブロック及び前記接続体は同じ材料からなってもよい。
本発明の概念1乃至11のいずれか1つによる電子部品において、
前記放熱ブロックの他方側の面は荒らし面を有してもよい。
《構成》
以下、本実施の形態の電子部品について説明する。本実施の形態の電子部品は、例えば電子装置又は電子モジュールである。電子装置としては例えば半導体装置を挙げることができ、電子モジュールとしては半導体モジュールを挙げることができる。また、本実施の形態の電子素子は典型的には半導体素子であり、例えばMOSFETやIGBT等の半導体からなるスイッチング素子であってもよいし、コンデンサ等であってもよい。本実施の形態の一方側とは図1の上方側を意味し、他方型とは図1の下方側を意味する。図1の上下方向(すなわち一方側の方向及び他方側の方向を含む方向)を法線方向とする面を、本実施の形態では「面方向」という。
次に、上述した構成からなる本実施の形態による作用・効果の一例について説明する。なお、「作用・効果」で説明するあらゆる態様を、上記構成で採用することができる。
次に、本発明の第2の実施の形態について説明する。
次に、本発明の第3の実施の形態について説明する。
次に、本発明の第4の実施の形態について説明する。
20 電子素子
30 接続体
31 屈曲部
32 先端部
35 端子
40 放熱ブロック
42 放熱ブロック本体部
43 延在部
50 絶縁部
80 導電性接着剤
90 封止部
130 凹部
Claims (12)
- ベースと、
前記ベースの一方側に設けられた電子素子と、
電子素子の一方側に設けられた接続体と、
前記接続体の一方側に設けられた放熱ブロックと、
前記接続体と前記放熱ブロックとの間に設けられた絶縁部と、
前記電子素子、前記接続体及び前記絶縁部を封止する封止部と、
を備え、
前記ベースの他方側の面の少なくとも一部は前記封止部から露出し、
前記放熱ブロックの一方側の面の少なくとも一部は前記封止部から露出することを特徴とする電子部品。 - 前記接続体の先端部は屈曲部を介して他方側に曲げられ、
前記先端部の一方側に前記絶縁部が設けられることを特徴とする請求項1に記載の電子部品。 - 前記接続体の先端部は凹部を有し、
前記凹部内に前記絶縁部が設けられることを特徴とする請求項1に記載の電子部品。 - 前記放熱ブロックは、放熱ブロック本体部と、前記放熱ブロック本体部から他方側に延びた延在部とを有し、
前記延在部は前記接続体の先端部の一方側に設けられ、
前記放熱ブロック本体部の一方側の面は前記封止部から露出することを特徴とする請求項1に記載の電子部品。 - 前記接続体の先端部は凹部を有し、
前記凹部内に前記絶縁部及び前記延在部が設けられることを特徴とする請求項4に記載の電子部品。 - 前記絶縁部は放熱絶縁シート又は放熱絶縁材料であることを特徴とする請求項1に記載の電子部品。
- 前記絶縁部は放熱絶縁性を有する弾性部材であることを特徴とする請求項1に記載の電子部品。
- 前記絶縁部は、前記接続体の先端部の厚みの1/5〜1/1の厚みを有することを特徴とする請求項7に記載の電子部品。
- 前記接続体の基端部は、前記封止部から外方に露出する端子の一方側の面に導電性接着剤を介して当接することを特徴とする請求項1に記載の電子部品。
- 前記封止部の一方側から前記放熱ブロックだけが露出していることを特徴とする請求項1に記載の電子部品。
- 前記ベース、前記放熱ブロック及び前記接続体は同じ材料からなることを特徴とする請求項1に記載の電子部品。
- 前記放熱ブロックの他方側の面は荒らし面を有することを特徴とする請求項1に記載の電子部品。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/038697 WO2019082333A1 (ja) | 2017-10-26 | 2017-10-26 | 電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019082333A1 true JPWO2019082333A1 (ja) | 2020-04-02 |
JP6810279B2 JP6810279B2 (ja) | 2021-01-06 |
Family
ID=66246888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019549770A Active JP6810279B2 (ja) | 2017-10-26 | 2017-10-26 | 電子部品 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11201101B2 (ja) |
JP (1) | JP6810279B2 (ja) |
CN (1) | CN111406316B (ja) |
WO (1) | WO2019082333A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021001924A1 (ja) * | 2019-07-02 | 2021-01-07 | 三菱電機株式会社 | パワーモジュールおよびその製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012137439A1 (ja) * | 2011-04-05 | 2012-10-11 | パナソニック株式会社 | 封止型半導体装置及びその製造方法 |
JP2013070026A (ja) * | 2011-09-08 | 2013-04-18 | Rohm Co Ltd | 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置 |
JP2013074035A (ja) * | 2011-09-27 | 2013-04-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2014060325A (ja) * | 2012-09-19 | 2014-04-03 | Micro Module Technology Co Ltd | 半導体装置 |
JP2016018979A (ja) * | 2014-07-11 | 2016-02-01 | 株式会社デンソー | モールドパッケージ |
JP2016105523A (ja) * | 2016-03-10 | 2016-06-09 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH064595Y2 (ja) * | 1988-02-24 | 1994-02-02 | 日本電気株式会社 | ハイブリッドic |
JP2000183277A (ja) * | 1998-12-17 | 2000-06-30 | Toshiba Corp | 半導体装置 |
JP4019993B2 (ja) * | 2003-03-31 | 2007-12-12 | 株式会社デンソー | 半導体装置 |
JP4450230B2 (ja) * | 2005-12-26 | 2010-04-14 | 株式会社デンソー | 半導体装置 |
EP2034519A4 (en) * | 2006-05-30 | 2012-01-04 | Kokusan Denki Co | SEMICONDUCTOR DEVICE SEALED WITH THE RESIN AND ELECTRONIC DEVICE USING THE SAME |
CN201000882Y (zh) * | 2007-01-17 | 2008-01-02 | 上海旭福电子有限公司 | 内嵌导热绝缘体具散热片的新型半导体器件封装结构 |
US8472193B2 (en) * | 2008-07-04 | 2013-06-25 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device |
JP5383621B2 (ja) * | 2010-10-20 | 2014-01-08 | 三菱電機株式会社 | パワー半導体装置 |
JP2012119488A (ja) * | 2010-11-30 | 2012-06-21 | Sanken Electric Co Ltd | 半導体装置の製造方法及び半導体装置 |
JP5891616B2 (ja) * | 2011-06-28 | 2016-03-23 | 日産自動車株式会社 | 半導体装置 |
JP5488541B2 (ja) * | 2011-07-04 | 2014-05-14 | 株式会社デンソー | 半導体装置 |
CN102892277B (zh) * | 2011-07-20 | 2016-08-03 | 光宝电子(广州)有限公司 | 电路板装置及其制造方法及具有该电路板装置的电源供应器 |
CN104011853B (zh) * | 2011-12-26 | 2016-11-09 | 三菱电机株式会社 | 电力用半导体装置及其制造方法 |
DE112012005920B4 (de) * | 2012-02-22 | 2022-03-24 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung |
JP2013214549A (ja) * | 2012-03-30 | 2013-10-17 | Toshiba Corp | 半導体装置及びそれを用いたユニット |
JP6048238B2 (ja) * | 2012-06-04 | 2016-12-21 | 株式会社デンソー | 電子装置 |
JP6165025B2 (ja) * | 2013-10-31 | 2017-07-19 | 三菱電機株式会社 | 半導体モジュール |
JP6344215B2 (ja) | 2014-11-21 | 2018-06-20 | 株式会社デンソー | 半導体装置及びパワーモジュール |
JP2016131196A (ja) * | 2015-01-13 | 2016-07-21 | トヨタ自動車株式会社 | 半導体装置 |
DE102015111204B4 (de) * | 2015-07-10 | 2019-03-07 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Modul mit Lastanschlusselementen |
-
2017
- 2017-10-26 WO PCT/JP2017/038697 patent/WO2019082333A1/ja active Application Filing
- 2017-10-26 CN CN201780096191.8A patent/CN111406316B/zh active Active
- 2017-10-26 US US16/636,609 patent/US11201101B2/en active Active
- 2017-10-26 JP JP2019549770A patent/JP6810279B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012137439A1 (ja) * | 2011-04-05 | 2012-10-11 | パナソニック株式会社 | 封止型半導体装置及びその製造方法 |
JP2013070026A (ja) * | 2011-09-08 | 2013-04-18 | Rohm Co Ltd | 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置 |
JP2013074035A (ja) * | 2011-09-27 | 2013-04-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2014060325A (ja) * | 2012-09-19 | 2014-04-03 | Micro Module Technology Co Ltd | 半導体装置 |
JP2016018979A (ja) * | 2014-07-11 | 2016-02-01 | 株式会社デンソー | モールドパッケージ |
JP2016105523A (ja) * | 2016-03-10 | 2016-06-09 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN111406316B (zh) | 2023-08-01 |
CN111406316A (zh) | 2020-07-10 |
JP6810279B2 (ja) | 2021-01-06 |
US20200381335A1 (en) | 2020-12-03 |
WO2019082333A1 (ja) | 2019-05-02 |
US11201101B2 (en) | 2021-12-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4455488B2 (ja) | 半導体装置 | |
CN109564908B (zh) | 半导体装置以及半导体装置的制造方法 | |
CN109461710B (zh) | 半导体装置 | |
JP3406753B2 (ja) | 半導体装置および半導体モジュール | |
JP6182474B2 (ja) | 電子部品の固定構造および固定方法 | |
JP2013219267A (ja) | パワーモジュール | |
JP2007311770A (ja) | 半導体装置 | |
WO2020208867A1 (ja) | 半導体装置 | |
US11581230B2 (en) | Power semiconductor module and a method for producing a power semiconductor module | |
US10541219B2 (en) | Semiconductor module, base plate of semiconductor module, and method of manufacturing semiconductor device | |
JP2014013878A (ja) | 電子装置 | |
JPWO2019082333A1 (ja) | 電子部品 | |
CN112530915A (zh) | 半导体装置 | |
US10121719B2 (en) | Semiconductor device | |
KR20040073942A (ko) | 반도체장치 | |
US10251256B2 (en) | Heat dissipating structure | |
US8686554B2 (en) | Vertically mountable semiconductor device package | |
US20240096744A1 (en) | Semiconductor device and inverter unit | |
JP2020017702A (ja) | 半導体装置 | |
JP6521754B2 (ja) | 半導体装置 | |
JP6590123B1 (ja) | 半導体装置 | |
CN219658693U (zh) | 一种功率半导体模块 | |
US20230197561A1 (en) | Power semiconductor module comprising a substrate, power semiconductor components and comprising a pressure body | |
US20220328368A1 (en) | Power semiconductor module arrangement and housing for a power semiconductor module arrangement | |
JP6771581B2 (ja) | 半導体モジュール及び半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191107 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191107 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200131 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201201 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201210 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6810279 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |