JPWO2018219484A5 - - Google Patents
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- Publication number
- JPWO2018219484A5 JPWO2018219484A5 JP2019564442A JP2019564442A JPWO2018219484A5 JP WO2018219484 A5 JPWO2018219484 A5 JP WO2018219484A5 JP 2019564442 A JP2019564442 A JP 2019564442A JP 2019564442 A JP2019564442 A JP 2019564442A JP WO2018219484 A5 JPWO2018219484 A5 JP WO2018219484A5
- Authority
- JP
- Japan
- Prior art keywords
- superconducting metal
- substrate
- superconducting
- silicon
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims 54
- 239000002184 metal Substances 0.000 claims 54
- 239000000758 substrate Substances 0.000 claims 37
- 238000000034 method Methods 0.000 claims 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 15
- 229910052710 silicon Inorganic materials 0.000 claims 15
- 239000010703 silicon Substances 0.000 claims 15
- 230000000149 penetrating effect Effects 0.000 claims 8
- 238000009713 electroplating Methods 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 5
- 150000002739 metals Chemical class 0.000 claims 5
- 238000005304 joining Methods 0.000 claims 4
- 238000000059 patterning Methods 0.000 claims 4
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 230000006835 compression Effects 0.000 claims 2
- 238000007906 compression Methods 0.000 claims 2
- 239000000356 contaminant Substances 0.000 claims 2
- 238000000227 grinding Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000000945 filler Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/609,860 | 2017-05-31 | ||
| US15/609,860 US10157842B1 (en) | 2017-05-31 | 2017-05-31 | Semiconductor device including superconducting metal through-silicon-vias and method of manufacturing the same |
| PCT/EP2017/081792 WO2018219484A1 (en) | 2017-05-31 | 2017-12-07 | Superconducting metal through-silicon-vias |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2020522128A JP2020522128A (ja) | 2020-07-27 |
| JP2020522128A5 JP2020522128A5 (https=) | 2022-02-22 |
| JPWO2018219484A5 true JPWO2018219484A5 (https=) | 2022-02-22 |
| JP7182834B2 JP7182834B2 (ja) | 2022-12-05 |
Family
ID=60627639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019564442A Active JP7182834B2 (ja) | 2017-05-31 | 2017-12-07 | 超伝導金属シリコン貫通ビアを有する半導体デバイスのための製造方法および構造 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US10157842B1 (https=) |
| EP (1) | EP3639295B1 (https=) |
| JP (1) | JP7182834B2 (https=) |
| CN (1) | CN110622297B (https=) |
| ES (1) | ES2960054T3 (https=) |
| WO (1) | WO2018219484A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9971970B1 (en) * | 2015-04-27 | 2018-05-15 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with VIAS and methods for making the same |
| US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
| US10741742B2 (en) * | 2018-02-28 | 2020-08-11 | The Regents Of The University Of Colorado, A Body Corporate | Enhanced superconducting transition temperature in electroplated rhenium |
| US11158781B2 (en) | 2019-11-27 | 2021-10-26 | International Business Machines Corporation | Permanent wafer handlers with through silicon vias for thermalization and qubit modification |
| US20210280765A1 (en) * | 2020-03-06 | 2021-09-09 | The Board Of Trustees Of The University Of Alabama | Superconducting carrier and cables for quantum device chips and method of fabrication |
| CN112420604B (zh) * | 2020-11-20 | 2022-12-06 | 中国科学院半导体研究所 | 一种基于热压键合的tsv垂直电学互连器件的制备方法 |
| US12033981B2 (en) | 2020-12-16 | 2024-07-09 | International Business Machines Corporation | Create a protected layer for interconnects and devices in a packaged quantum structure |
| FI20215520A1 (en) * | 2021-05-04 | 2022-11-05 | Iqm Finland Oy | Superconducting vias in the substrate |
| CN118339566A (zh) | 2021-06-11 | 2024-07-12 | 西克公司 | 针对超导量子电路的通量偏置的系统和方法 |
| CN115000286A (zh) * | 2022-07-13 | 2022-09-02 | 材料科学姑苏实验室 | 一种晶圆孔道填充方法、填充装置、转接片和用途 |
| CN117460398B (zh) * | 2023-10-30 | 2026-01-13 | 本源量子计算科技（合肥）股份有限公司 | 超导线路及其制造方法 |
| JP2026028554A (ja) | 2024-08-07 | 2026-02-20 | 富士通株式会社 | デバイスの製造方法及びデバイス |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1329952C (en) * | 1987-04-27 | 1994-05-31 | Yoshihiko Imanaka | Multi-layer superconducting circuit substrate and process for manufacturing same |
| EP0358879A3 (en) * | 1988-09-13 | 1991-02-27 | Hewlett-Packard Company | Method of making high density interconnects |
| EP0612114B1 (en) * | 1993-02-15 | 1997-05-14 | Sumitomo Electric Industries, Ltd. | Method for forming a patterned oxide superconductor thin film |
| US6100194A (en) | 1998-06-22 | 2000-08-08 | Stmicroelectronics, Inc. | Silver metallization by damascene method |
| US6228675B1 (en) | 1999-07-23 | 2001-05-08 | Agilent Technologies, Inc. | Microcap wafer-level package with vias |
| SG111972A1 (en) | 2002-10-17 | 2005-06-29 | Agency Science Tech & Res | Wafer-level package for micro-electro-mechanical systems |
| US8084695B2 (en) | 2007-01-10 | 2011-12-27 | Hsu Hsiuan-Ju | Via structure for improving signal integrity |
| KR100975652B1 (ko) * | 2007-10-05 | 2010-08-17 | 한국과학기술원 | 아연 및 아연합금을 이용한 비아 및 그의 형성 방법, 그를3차원 다중 칩 스택 패키지 제조 방법 |
| US7696064B2 (en) * | 2007-10-11 | 2010-04-13 | Skyworks Solutions, Inc. | Methods for forming a through via |
| US7776741B2 (en) | 2008-08-18 | 2010-08-17 | Novellus Systems, Inc. | Process for through silicon via filing |
| JP5471268B2 (ja) * | 2008-12-26 | 2014-04-16 | 大日本印刷株式会社 | 貫通電極基板及びその製造方法 |
| EP3098865B1 (en) | 2009-02-27 | 2018-10-03 | D-Wave Systems Inc. | Method for fabricating a superconducting integrated circuit |
| JP2011026680A (ja) | 2009-07-28 | 2011-02-10 | Renesas Electronics Corp | 半導体装置の製造方法及び半導体装置の製造装置 |
| CN102024782B (zh) | 2010-10-12 | 2012-07-25 | 北京大学 | 三维垂直互联结构及其制作方法 |
| WO2013180780A2 (en) * | 2012-03-08 | 2013-12-05 | D-Wave Systems Inc. | Systems and methods for fabrication of superconducting integrated circuits |
| CN102602881B (zh) * | 2012-04-01 | 2014-04-09 | 杭州士兰集成电路有限公司 | Mems封帽硅片的多硅槽形成方法及其刻蚀掩膜结构 |
| KR20140081191A (ko) * | 2012-12-21 | 2014-07-01 | 삼성전기주식회사 | 방열기판 및 그 제조 방법 |
| US9520547B2 (en) * | 2013-03-15 | 2016-12-13 | International Business Machines Corporation | Chip mode isolation and cross-talk reduction through buried metal layers and through-vias |
| US9396992B2 (en) * | 2014-03-04 | 2016-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of using a barrier-seed tool for forming fine-pitched metal interconnects |
| KR20160046169A (ko) * | 2014-10-20 | 2016-04-28 | 삼성디스플레이 주식회사 | 광학 마스크 |
| US9761561B2 (en) * | 2015-03-18 | 2017-09-12 | Globalfoundries Singapore Pte. Ltd. | Edge structure for backgrinding asymmetrical bonded wafer |
-
2017
- 2017-05-31 US US15/609,860 patent/US10157842B1/en active Active
- 2017-12-07 ES ES17811292T patent/ES2960054T3/es active Active
- 2017-12-07 WO PCT/EP2017/081792 patent/WO2018219484A1/en not_active Ceased
- 2017-12-07 JP JP2019564442A patent/JP7182834B2/ja active Active
- 2017-12-07 CN CN201780090283.5A patent/CN110622297B/zh active Active
- 2017-12-07 EP EP17811292.6A patent/EP3639295B1/en active Active
-
2018
- 2018-06-06 US US16/001,302 patent/US10504842B1/en active Active
- 2018-12-11 US US16/215,913 patent/US10833016B2/en active Active
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