CN110622297B - 硅通孔的超导金属 - Google Patents

硅通孔的超导金属 Download PDF

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Publication number
CN110622297B
CN110622297B CN201780090283.5A CN201780090283A CN110622297B CN 110622297 B CN110622297 B CN 110622297B CN 201780090283 A CN201780090283 A CN 201780090283A CN 110622297 B CN110622297 B CN 110622297B
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superconducting metal
substrate
superconducting
via hole
silicon
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CN110622297A (zh
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D·亚伯拉罕
J·M·科特
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4484—Superconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0238—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes through pads or through electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0261—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias characterised by the filling method or the material of the conductive fill
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/331—Bonding techniques, e.g. hybrid bonding characterised by the application of energy for connecting
    • H10W80/333—Compression bonding
    • H10W80/334—Thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
CN201780090283.5A 2017-05-31 2017-12-07 硅通孔的超导金属 Active CN110622297B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/609,860 US10157842B1 (en) 2017-05-31 2017-05-31 Semiconductor device including superconducting metal through-silicon-vias and method of manufacturing the same
US15/609,860 2017-05-31
PCT/EP2017/081792 WO2018219484A1 (en) 2017-05-31 2017-12-07 Superconducting metal through-silicon-vias

Publications (2)

Publication Number Publication Date
CN110622297A CN110622297A (zh) 2019-12-27
CN110622297B true CN110622297B (zh) 2023-09-01

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CN201780090283.5A Active CN110622297B (zh) 2017-05-31 2017-12-07 硅通孔的超导金属

Country Status (6)

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US (3) US10157842B1 (https=)
EP (1) EP3639295B1 (https=)
JP (1) JP7182834B2 (https=)
CN (1) CN110622297B (https=)
ES (1) ES2960054T3 (https=)
WO (1) WO2018219484A1 (https=)

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US10068181B1 (en) 2015-04-27 2018-09-04 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafer and methods for making the same
US11121301B1 (en) * 2017-06-19 2021-09-14 Rigetti & Co, Inc. Microwave integrated quantum circuits with cap wafers and their methods of manufacture
US10741742B2 (en) 2018-02-28 2020-08-11 The Regents Of The University Of Colorado, A Body Corporate Enhanced superconducting transition temperature in electroplated rhenium
US11158781B2 (en) 2019-11-27 2021-10-26 International Business Machines Corporation Permanent wafer handlers with through silicon vias for thermalization and qubit modification
US20210280765A1 (en) * 2020-03-06 2021-09-09 The Board Of Trustees Of The University Of Alabama Superconducting carrier and cables for quantum device chips and method of fabrication
CN112420604B (zh) * 2020-11-20 2022-12-06 中国科学院半导体研究所 一种基于热压键合的tsv垂直电学互连器件的制备方法
US12033981B2 (en) 2020-12-16 2024-07-09 International Business Machines Corporation Create a protected layer for interconnects and devices in a packaged quantum structure
FI20215520A1 (en) * 2021-05-04 2022-11-05 Iqm Finland Oy Superconducting vias in the substrate
JP2024526085A (ja) 2021-06-11 2024-07-17 シーク， インコーポレイテッド 超伝導量子回路のための磁束バイアスのシステム及び方法
CN115000286A (zh) * 2022-07-13 2022-09-02 材料科学姑苏实验室 一种晶圆孔道填充方法、填充装置、转接片和用途
CN117460398B (zh) * 2023-10-30 2026-01-13 本源量子计算科技（合肥）股份有限公司 超导线路及其制造方法
JP2026028554A (ja) 2024-08-07 2026-02-20 富士通株式会社 デバイスの製造方法及びデバイス

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EP0358879A2 (en) * 1988-09-13 1990-03-21 Hewlett-Packard Company Method of making high density interconnects
CN1044869A (zh) * 1987-04-27 1990-08-22 富士通株式会社 多层超导电路衬底及其制备方法
US5446016A (en) * 1993-02-15 1995-08-29 Sumitomo Electric Industries, Ltd. Method for forming a patterned oxide superconductor thin film

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EP0358879A2 (en) * 1988-09-13 1990-03-21 Hewlett-Packard Company Method of making high density interconnects
US5446016A (en) * 1993-02-15 1995-08-29 Sumitomo Electric Industries, Ltd. Method for forming a patterned oxide superconductor thin film

Also Published As

Publication number Publication date
JP7182834B2 (ja) 2022-12-05
US10833016B2 (en) 2020-11-10
CN110622297A (zh) 2019-12-27
EP3639295B1 (en) 2023-09-13
JP2020522128A (ja) 2020-07-27
US20200251419A1 (en) 2020-08-06
US20180350749A1 (en) 2018-12-06
US10157842B1 (en) 2018-12-18
EP3639295A1 (en) 2020-04-22
WO2018219484A1 (en) 2018-12-06
US10504842B1 (en) 2019-12-10
ES2960054T3 (es) 2024-02-29

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