JP2020522128A - 超伝導金属シリコン貫通ビアを有する半導体デバイスのための製造方法および構造 - Google Patents
超伝導金属シリコン貫通ビアを有する半導体デバイスのための製造方法および構造 Download PDFInfo
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- JP2020522128A JP2020522128A JP2019564442A JP2019564442A JP2020522128A JP 2020522128 A JP2020522128 A JP 2020522128A JP 2019564442 A JP2019564442 A JP 2019564442A JP 2019564442 A JP2019564442 A JP 2019564442A JP 2020522128 A JP2020522128 A JP 2020522128A
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- silicon
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
- H01L2224/081—Disposition
- H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
- H01L2224/08146—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bonding area connecting to a via connection in the body
-
- H—ELECTRICITY
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- H01L2224/802—Applying energy for connecting
- H01L2224/80201—Compression bonding
- H01L2224/80203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- H01L2225/06503—Stacked arrangements of devices
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Abstract
Description
Claims (25)
- 半導体デバイスを製造する方法であって、
第1の超伝導金属の第1のパターンを形成するためにベース基板上で前記第1の超伝導金属の層をパターニングするステップと、
第2の超伝導金属の第2のパターンを形成するためにキャップ基板上で前記第2の超伝導金属の層をパターニングするステップと、
ビアを形成するために前記第2の超伝導金属の前記第2のパターンおよび前記キャップ基板をエッチングするステップであって、前記第2の超伝導金属の残りの部分は、前記キャップ基板の上面上で前記ビアの外周の周りに延びる、前記エッチングするステップと、
前記キャップ基板を反転させて、前記キャップ基板を前記ベース基板に接合するステップと、
前記ビアを露出させてそれへの開口部を設けるために前記キャップ基板の一部分を除去するステップであって、前記ビアの底部は、第1の超伝導金属の前記第1のパターンを露出させる、前記除去するステップと、
基板貫通ビアを形成するために前記ビアを第3の超伝導金属で充填するステップと
を含む、方法。 - 前記キャップ基板を前記ベース基板に接合するステップは、前記キャップ基板上の前記第2の超伝導金属の前記部分を前記ベース基板上の前記第1の超伝導金属に位置合わせして、熱圧縮により接触させるステップを含む、請求項1に記載の方法。
- 前記ビアを前記第3の超伝導金属で充填するステップは、電気めっきするステップを含む、請求項1または2に記載の方法。
- 前記ビアを前記第3の超伝導金属で充填するステップは、その上の酸化物および汚染物質を除去するために前記ビアの前記底部における第1の超伝導金属の前記露出した第1のパターンを清浄化するステップと、その後に続く電気めっきするステップとを含む、請求項1〜3のいずれか一項に記載の方法。
- 前記ビアを前記第3の超伝導金属で充填するステップは、その上の酸化物および汚染物質を除去するために前記ビアの前記底部における前記第1の超伝導金属の前記露出した第1のパターンを清浄化するステップと、前記ビアの前記底部における前記第1の超伝導金属の前記露出した第1のパターン上へ第4の超伝導金属を無電解的に堆積するステップと、前記ビアを前記底部から上方に充填するために前記第3の超伝導金属をその中に電気めっきするステップとを含む、請求項1または2に記載の方法。
- 前記ベース基板および前記キャップ基板は、シリコン・ウェーハを備える、請求項1〜5のいずれか一項に記載の方法。
- 前記キャップ基板の前記部分を除去するステップは、約10μm〜約250μmの深さをもつ前記ビアを提供する、請求項1〜6のいずれか一項に記載の方法。
- 前記ビアを露出させてそれへの前記開口部を提供するために前記キャップ基板の前記部分を除去するステップは、裏面研削プロセスを含む、請求項1〜7のいずれか一項に記載の方法。
- 前記第1および第2の超伝導金属は、同じである、請求項1〜8のいずれか一項に記載の方法。
- 前記第3の超伝導金属は、前記第1および第2の超伝導金属とは異なる、請求項1〜9のいずれか一項に記載の方法。
- 半導体デバイスを製造する方法であって、
第1の超伝導金属の第1のパターンを形成するためにベース基板上で前記第1の超伝導金属の層をパターニングするステップと、
第2の超伝導金属の第2のパターンを形成するためにキャップ基板上で前記第2の超伝導金属の層をパターニングするステップと、
前記キャップ基板を反転させて、前記第1の超伝導金属を前記第2の超伝導金属に接合するステップと、
前記キャップ基板を前記接合された第2の超伝導金属までエッチングすることによってビアを形成するステップであって、前記ビアの底部は、前記第2の超伝導金属の表面を露出させる、前記形成するステップと、
基板貫通ビアを形成するために前記ビアを底部から上方に第3の超伝導金属で充填するステップと
を含む、方法。 - 前記第1の超伝導金属を前記第2の超伝導金属に接合するステップは、前記第1および第2の超伝導金属を熱圧縮により接触させるステップを含む、請求項11に記載の方法。
- 前記ビアを前記第3の超伝導金属で充填するステップは、電気めっきするステップを含む、請求項11または12に記載の方法。
- 前記ビアを前記超伝導金属で充填するステップは、その上の酸化物および汚染物質を除去するために前記ビアの前記底部における前記第2の超伝導金属の前記露出した表面を清浄化するステップと、その後に続く電気めっきするステップとを含む、請求項11〜13のいずれか一項に記載の方法。
- 前記ビアを前記第3の超伝導金属で充填するステップは、酸化物および汚染物質を除去するために前記ビアの前記底部における前記第2の超伝導金属の前記露出した表面を清浄化するステップと、前記ビアの前記底部における前記第2の超伝導金属の前記露出した表面上へ超伝導金属を無電解的に堆積するステップと、前記ビアを前記底部から上方に充填するために前記第3の超伝導金属をその中に電気めっきするステップとを含む、請求項11または12に記載の方法。
- 前記ベース基板および前記キャップ基板は、シリコン・ウェーハである、請求項11〜15のいずれか一項に記載の方法。
- ビアを形成するために前記キャップ基板をエッチングする前記ステップは、前記ビアを形成するために前記キャップ基板をエッチングする前に、10μm〜約250μmの厚さを提供するために前記キャップ基板の一部分を除去するステップを含む、請求項11〜16のいずれか一項に記載の方法。
- 前記厚さを提供するために前記キャップ基板の前記部分を除去するステップは、裏面研削プロセスを含む、請求項17に記載の方法。
- 前記第3の超伝導金属は、前記第1および第2の超伝導金属とは異なる、請求項11〜18のいずれか一項に記載の方法。
- 第1のシリコン基板と第2のシリコン基板との間に挟み込まれた熱圧着された超伝導金属層であって、前記第2の基板は、前記熱圧着された超伝導金属層への複数のシリコン貫通ビアを備える、前記超伝導金属層と、
前記シリコン貫通ビアを充填する電気めっきされた超伝導金属と
を備える、半導体構造。 - 前記電気めっきされた超伝導金属は、前記熱圧着された超伝導金属層とは異なる、請求項20に記載の半導体構造。
- 第1のシリコン基板と第2のシリコン基板との間に挟み込まれた熱圧着された超伝導金属層を備え、前記第2の基板は、前記熱圧着された超伝導金属層への複数のシリコン貫通ビアを備える、
半導体構造。 - 前記第1のシリコン基板と前記第2のシリコン基板との間に挟み込まれた前記熱圧着された超伝導金属層は、第1の超伝導金属層および第2の超伝導金属層を備え、前記第1および第2の超伝導金属は異なる、請求項22に記載の半導体構造。
- シリコン貫通ビアを超伝導金属で充填するための方法であって、
第1のシリコン基板と第2のシリコン基板との間に挟み込まれた熱圧着された超伝導金属層を設けるステップであって、前記第2の基板は、前記熱圧着された超伝導金属層への複数の前記シリコン貫通ビアを備える、前記設けるステップと、
電気めっきプロセス中に底部電極として前記熱圧着された超伝導金属層を用いて、第2の超伝導金属を前記シリコン貫通ビア中に電気めっきするステップであって、前記充填は、前記底部から上に向かう、前記電気めっきするステップと
を含む、方法。 - 前記熱圧着された超伝導金属層は、アルミニウム、鉛、またはそれらの合金を備え、前記超伝導金属充填物は、インジウム、錫、またはそれらの合金を備える、請求項24に記載の方法。
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