CN102867757B - 用于去除底切的ubm蚀刻方法 - Google Patents

用于去除底切的ubm蚀刻方法 Download PDF

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Publication number
CN102867757B
CN102867757B CN201110340122.1A CN201110340122A CN102867757B CN 102867757 B CN102867757 B CN 102867757B CN 201110340122 A CN201110340122 A CN 201110340122A CN 102867757 B CN102867757 B CN 102867757B
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layer
ubm
laser beam
mask
copper layer
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CN102867757A (zh
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雷弋易
郭宏瑞
刘重希
李明机
余振华
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

一种方法，包括形成衬底上方的凸块下金属(UBM)层以及形成UBM层上方的掩模。该掩模覆盖UBM层的第一部分，而UBM层的第二部分通过掩模中的开口暴露。在开口中和UBM层的第二部分上形成了金属凸块。然后，去除掩模。执行激光去除来去除UBM层的第一部分的部分并且形成UBM。本发明还公开了一种用于去除底切的UBM蚀刻方法。

Description

用于去除底切的UBM蚀刻方法
技术领域
本发明通常涉及半导体技术领域，更具体地来说，涉及一种UBM蚀刻方法。
背景技术
在形成半导体晶圆时，首先在半导体衬底表面上形成集成电路器件，诸如，晶体管。然后在集成电路器件上方形成互连结构。在半导体芯片的表面上形成金属凸块，以便接触半导体电路器件。
在典型的金属凸块形成工艺中，首先形成凸块下金属(UBM)层，从而电连接金属焊盘。该UBM层可以包括钛层以及处在钛层上方的铜种层。随后在UBM层上(例如，通过电镀)形成金属凸块。该形成工艺包括形成掩模来覆盖UBM层的第一部分，并且留出未被覆盖的UBM层的第二部分。金属凸块形成在UBM层的第二部分上。在形成该金属凸块之后，去除掩模，并且通过湿式蚀刻去除UBM层的第一部分。明显地，由于对钛层进行了横向蚀刻，该湿式蚀刻导致在金属凸块下方形成了底切。由此，金属凸块会与相应的芯片或晶圆分层，从而导致金属凸块制造工艺的低产量。
发明内容
为了解决现有所存在的问题，根据本发明的一个方面，提供了一种方法，包括：形成衬底上方的凸块下金属(UBM)层；形成所述UBM层上方的掩模，其中，所述掩模覆盖所述UBM层的第一部分，而所述UBM层的第二部分通过所述掩模中的开口暴露；在所述开口中和所述UBM层的所述第二部分上形成金属凸块；去除所述掩模；以及执行激光去除来去除所述UBM层的所述第一部分的部分，从而形成UBM。
在该方法中，所述UBM包括钛层以及处在所述钛上方的铜种层，并且在所述激光去除的步骤中被去除的所述UBM层的所述第一部分的所述部分包括所述钛层的部分和所述铜种层的部分；或者在所述激光去除的步骤之后，所述UBM的所述第一部分的部分未被去除，并且其中，所述UBM包括所述UBM层的所述第二部分和所述UBM层的所述第一部分的剩余部分；以及所述UBM的所述第一部分的所述剩余部分形成具有基本上均匀宽度的环。
在该方法中，在大约10毫秒和大约1秒之间的持续时间内进行所述激光去除；或者使用具有在大约100nm和大约400nm之间的波长的激光束执行所述激光去除；或者使用具有在大约300毫焦耳/cm2和大约1500毫焦耳/cm2之间的能级的激光束执行所述激光去除。
根据本发明的另一实施例，提供了一种方法，包括：在衬底上方形成金属焊盘；在所述金属焊盘上方形成钝化层；在所述钝化层上方形成钛阻挡层，并且所述钛阻挡层延伸进入到所述钝化层的开口中，从而电连接所述金属焊盘；在所述钛阻挡层上方形成铜种层；在所述铜种层上方形成掩模，其中，所述掩模覆盖所述铜种层的第一部分，并且其中，所述铜种层的第二部分未被所述掩模所覆盖；在所述铜种层的所述第二部分上形成金属凸块；去除所述掩模，从而暴露出所述铜种层的所述第一部分；以及将激光束投射在所述金属凸块和所述铜种层上。
在该方法中，在投射所述激光束的步骤之后，去除暴露于所述激光束的所述铜种层的第一部分；以及在投射所述激光束的步骤之后，去除处在所述铜种层的所述第一部分正下方的所述钛阻挡层的部分。
在该方法中，在投射所述激光束的步骤之后，不去除暴露于所述激光束的所述铜种层的第二部分；以及所述铜种层的所述第二部分形成包围所述金属凸块的环，并且整个所述环的所有部分都具有基本上均匀的宽度。
在该方法中，在大约10毫秒和大约1秒之间的持续时间内投射所述激光束；或者所述激光束具有在大约100nm和400nm之间的波长；或者所述激光束具有在大约300毫焦耳/cm2和大约1500毫焦耳/cm2之间的能级。
根据又一实施例，提供了一种集成电路结构，包括：金属焊盘，处在衬底上方；钝化层，处在所述金属焊盘上方；凸块下金属(UBM)，处在所述钝化层上方并且延伸进入到所述钝化层的开口中，从而电连接至所述金属焊盘，其中，所述UBM包括：钛阻挡层；以及铜种层，处在所述钛阻挡层上方；以及金属凸块，处在所述UBM的第一部分上方并且与其垂直重叠，其中，所述UBM进一步包括不与所述金属凸块垂直重叠的第二部分。
在该集成电路结构中，所述UBM的所述第二部分形成包围所述UBM的所述第一部分的环；以及所述环的所有部分具有基本上均匀的宽度，所述基本上均匀的宽度在大约1μm和大约10μm之间。
在集成电路结构中，所述UBM的所述第二部分包括所述钛层的部分和所述铜种层的部分。
附图说明
为了更全面地理解实施例及其优势，现将结合附图所进行的描述作为参考，其中：
图1至图5是根据实施例的制造金属凸块的中间阶段的截面图；
图6示出晶圆的俯视图，在该晶圆上执行了激光去除，从而去除了凸块下金属(UBM)层的部分；以及
图7示出了金属凸块和置于下方的UBM的俯视图。
具体实施方式
下面，详细讨论本发明各实施例的制造和使用。然而，应该理解，本发明提供了许多可以在各种具体环境中实现的可应用的概念。所讨论的具体实施例仅仅是说明性的，而不用于限制本发明的范围。
根据实施例的各个方面，提出了在下方的凸块下金属层(UBM)中形成无底切的金属凸块的方法。根据实施例示出了金属凸块以及UBM的中间制造阶段。论述了实施例的变型例。在各个视图和说明性的实施例中类似的参考标号用于表示类似的元件。
参考图1，提供了包括衬底10的晶圆2。在实施例中，衬底10是半导体衬底(诸如，硅衬底)，然而也可以由其他半导体材料(诸如，硅锗、硅碳、砷化镓等)形成该衬底。可以在衬底10的表面形成半导体器件14，该半导体器件可以包括晶体管、二极管、电阻器等。在衬底10上方形成了互连结构12，该互连结构包括形成在其中并且与半导体器件14电连接的金属线和通孔(未示出)。可以由铜或铜合金并且使用镶嵌工艺形成该金属线和通孔。互连结构12可以包括层间介电层(ILD)和金属间介电层(IMD)。在可选的实施例中，晶圆2是插入式晶圆或封装衬底的晶圆，并且该晶圆基本上没有有源器件(包括晶体管)以及无源器件，诸如，电阻器、电容器、电感器和/或类似物。在这些实施例中，衬底10可以由半导体材料或介电材料(诸如，氧化硅)形成。
金属焊盘28形成在互连结构12上方。金属焊盘28可以包括铝(Al)、铜(Cu)、银(Ag)、金(Au)、镍(Ni)、钨(W)、其合金和/或其多个层。例如，金属焊盘28可以通过下方的互连结构12与半导体器件14电连接。可以形成钝化层30来覆盖金属焊盘的边缘部分。在示例性实施例中，该钝化层30由聚酰亚胺或其他介电材料(诸如，氧化硅、氮化硅和其多个层)形成。
参考图2，形成了凸块下金属(UBM)层43。在实施例中，UBM层43包括阻挡层40和处在阻挡层40上方的种层42。阻挡层40延伸进入到钝化层30的开口中并且与金属焊盘28电连接，并且可以与其进行物理接触。阻挡层40可以是钛层、氮化钛层、钽层、氮化钽层或由钛合金或钽合金形成的层。种层42的材料可以包括铜或铜合金，并且由此在后文中可选地将该种层42称为铜种层。然而，也可以包括其他金属诸如，银、金、铝、钯、镍、镍合金、钨合金、铬、铬合金及其组合。在实施例中，可以使用物理汽相沉积(PVD)或其他适用方法形成阻挡层40和种层42。阻挡层40可以具有在大约至大约之间的厚度。种层42可以具有在大约和大约之间的厚度，然而也可以使用不同的厚度。
图3示出掩模46的形成，例如，可以由光刻胶或干膜形成该掩模。掩模46被图案化，并且通过掩模46中的开口45暴露出UBM层43的第一部分43A，而UBM层43的第二部分43B被掩模46覆盖。然后，同样在图3中示出了金属凸块50的形成。在实施例中，晶圆2被置入到电镀溶液(未示出)中，并且执行电镀步骤来在UBM层43上以及开口45中形成金属凸块50。该电镀可以是电气-电镀、化学镀、浸镀等。在示例性实施例中，金属凸块50是铜凸块或可以包括铜凸块，该铜凸块带有选自由镍层、镍合金、Sn-Ag合金层、Sn-Cu合金层、Sn-Ag-Cu合金层、钯层、金层、银层及其组合构成的组中的覆盖层(caplayer)。在可选的实施例中，金属凸块50是焊料凸块，该焊料凸块可以由Sn-Ag合金、Sn-Cu合金、Sn-Ag-Cu合金等形成，并且可以是无铅的或含铅的。
在一些实施例中，其中，金属凸块50包括铜凸块51。可以形成附加层52(诸如，焊料覆盖层(soldercap)、镍层、锡层、钯层、金层、其合金和/或其多个层)作为金属凸块50的一部分，其中，层52可以处在铜凸块51上方。另外，可以在随后去除掩模46之前或之后形成附加层52，该掩模的去除步骤在图4中示出。参考图4，在形成金属凸块50之后去除掩模46，并且暴露出之前被掩模46覆盖的UBM层43的部分43B。
图5示出了去除UBM层43的暴露部分43B(图4)。使用激光束54执行该去除步骤，激光束被射向金属凸块50和UBM部分43B。图7示意性地示出了激光束54在晶圆2上的点56，其中，点56是晶圆2接收到激光束54的位置。点56可以具有矩形形状、圆形形状等。点56可以具有例如，在大约1mm×1mm和大约50mm×50mm之间的点尺寸。然而，可以认识到，在整个说明书中列举的尺寸仅仅是一些实例，可以将尺寸改变成其他适当的值。激光束54可以每次射在一个点56上，并且随后前进(如图6中的箭头所示)到相邻的点上，直至整个晶圆2都被激光束54投射过为止。在实施例中，激光束54投射在每个点56上的持续时间可以在大约10毫秒和大约1秒之间。激光束54可以在1或2分钟内完成12英寸晶圆(晶圆2)的扫描。
在示例性实施例中，激光束54是紫外激光束，其具有在大约100nm至大约400nm之间的波长。该激光束54所提供的能级可以在大约300毫焦耳/cm2(mJ/cm2)和大约1500mJ/cm2之间，或在大约400mj/cm2和大约1400mj/cm2之间。可以注意到，所需的能级可以与晶圆2的结构相关，该结构包括UBM层43的厚度，并且可以通过实验确定最佳的能级。低能级将导致无法去除UBM部分43B，而高能级可以对晶圆2造成损害。可以选择最佳能级来在不对晶圆2造成损害的情况下有效地去除UBM层。
当激光束54所提供的高能量(图5)被部分43B(图4)远离金属凸块50的外部所接收时，导致UBM层43中的原子之间的接合被破坏。由此，使UBM部分43B的外部在激光束54的作用下变成粉末，并且该粉末被去除。UBM层43保留下来的部分形成了UBM44。另一方面，金属凸块50具有比UBM44的厚度大得多的厚度，并且金属凸块50可以分散和吸收激光束54中的能量，由此激光束54不会去除或减薄该金属凸块50。
如图5所示，UBM44包括被金属凸块50覆盖的部分以及未被激光束54去除的部分43C，其中，部分43C未被金属凸块50覆盖。部分43C未被去除的原因在于，因为部分43C接近体金属凸块50，所以部分43C所接收的能量被相邻的金属凸块50吸收了，并且该金属凸块防止了部分43C受到激光去除。
图7示出图5所示的结构的俯视图，部分43C超过金属凸块50的外边缘50A以基本上均匀的宽度S1朝向所有方向延伸，该宽度S1可以在大约1μm和10μm之间。可选地规定，部分43C可以形成包围金属凸块50的环，其中，该环的所有部分可以具有基本上均匀的宽度S1。
通过使用实施例，不执行湿式蚀刻来去除暴露的阻挡层和种层，完全去除了对阻挡层的底切。另外，还消除了在传统的铜种层湿式蚀刻步骤中所产生的金属凸块的铜损耗。在最终的结构中所得到的UBM延伸超过金属凸块50的边缘。因此，由于减少了底切所造成的分层，金属凸块形成工艺的可靠性有了明显的改善。
根据实施例，一种方法包括：形成衬底上方的UBM层并且形成UBM层上方的掩模。该掩模覆盖UBM层的第一部分，而UBM层的第二部分被掩模中的开口所暴露。金属凸块形成在该开口中和UBM层的第二部分上。然后去除该掩模。执行激光去除来去除UBM层第一部分的部分并且形成UBM。
根据其他实施例，一种方法包括：在衬底上方形成金属焊盘，在金属焊盘上方形成钝化层以及在钝化层上方形成钛阻挡层，并且该钛阻挡层延伸进入到钝化层的开口中，从而电连接金属焊盘。在钛阻挡层上方形成铜种层。在该铜种层上方形成掩模，其中，该掩模覆盖铜种层的第一部分，并且其中，铜种层的第二部分未被掩模覆盖。在铜种层的第二部分上形成金属凸块。去除该掩模从而暴露出铜种层的第一部分。将激光束投射向金属凸块和铜种层。
根据另外其他实施例，一种集成电路结构包括：衬底上方的金属焊盘、金属焊盘上方的钝化层以及钝化层上方的UBM，并且该UBM延伸进入到钝化层的开口中，从而电连接金属焊盘。UBM包括钛阻挡层和处在钛阻挡层上方的铜种层。在UBM的第一部分上方并且与其垂直重叠地形成金属凸块，其中，该UBM进一步包括不与金属凸块垂直重叠的第二部分。
尽管已经详细地描述了本发明及其优势，但应该理解，可以在不背离所附权利要求限定的本发明主旨和范围的情况下，做各种不同的改变，替换和更改。而且，本申请的范围并不仅限于本说明书中描述的工艺、机器、制造、材料组分、装置、方法和步骤的特定实施例。作为本领域普通技术人员应理解，通过本发明，现有的或今后开发的用于执行与根据本发明所采用的所述相应实施例基本相同的功能或获得基本相同结果的工艺、机器、制造，材料组分、装置、方法或步骤根据本发明可以被使用。因此，所附权利要求应该包括在这样的工艺、机器、制造、材料组分、装置、方法或步骤的范围内。此外，每条权利要求构成单独的实施例，并且多个权利要求和实施例的组合在本发明的范围内。

Claims (18)

1.一种形成集成电路结构的方法，包括：
形成衬底上方的凸块下金属UBM层；
形成所述UBM层上方的掩模，其中，所述掩模覆盖所述UBM层的第一部分，而所述UBM层的第二部分通过所述掩模中的开口暴露；
在所述开口中和所述UBM层的所述第二部分上形成金属凸块；
去除所述掩模；以及
执行激光去除来去除所述UBM层的所述第一部分的部分，从而形成UBM。
2.根据权利要求1所述的方法，其中，所述UBM包括钛层以及处在所述钛上方的铜种层，并且在所述激光去除的步骤中被去除的所述UBM层的所述第一部分的所述部分包括所述钛层的部分和所述铜种层的部分。
3.根据权利要求1所述的方法，其中，在所述激光去除的步骤之后，所述UBM层的所述第一部分的部分未被去除，并且其中，所述UBM包括所述UBM层的所述第二部分和所述UBM层的所述第一部分的剩余部分。
4.根据权利要求3所述的方法，其中，所述UBM层的所述第一部分的所述剩余部分形成具有均匀宽度的环。
5.根据权利要求1所述的方法，其中，在10毫秒和1秒之间的持续时间内进行所述激光去除。
6.根据权利要求1所述的方法，其中，使用具有在100nm和400nm之间的波长的激光束执行所述激光去除。
7.根据权利要求1所述的方法，其中，使用具有在300毫焦耳/cm2和1500毫焦耳/cm2之间的能级的激光束执行所述激光去除。
8.一种形成集成电路结构的方法，包括：
在衬底上方形成金属焊盘；
在所述金属焊盘上方形成钝化层；
在所述钝化层上方形成钛阻挡层，并且所述钛阻挡层延伸进入到所述钝化层的开口中，从而电连接所述金属焊盘；
在所述钛阻挡层上方形成铜种层；
在所述铜种层上方形成掩模，其中，所述掩模覆盖所述铜种层的第一部分，并且其中，所述铜种层的第二部分未被所述掩模所覆盖；
在所述铜种层的所述第二部分上形成金属凸块；
去除所述掩模，从而暴露出所述铜种层的所述第一部分；以及
将激光束投射在所述金属凸块和所述铜种层上。
9.根据权利要求8所述的方法，其中，在投射所述激光束的步骤之后，去除暴露于所述激光束的所述铜种层的第一部分的部分。
10.根据权利要求9所述的方法，其中，在投射所述激光束的步骤之后，去除处在所述铜种层的所述第一部分的所述部分正下方的所述钛阻挡层的部分。
11.根据权利要求9所述的方法，其中，在投射所述激光束的步骤之后，不去除所述铜种层的第二部分。
12.根据权利要求11所述的方法，其中，所述铜种层的所述第一部分的剩余部分形成包围所述金属凸块的环，并且整个所述环的所有部分都具有均匀的宽度。
13.根据权利要求8所述的方法，其中，在10毫秒和1秒之间的持续时间内投射所述激光束。
14.根据权利要求8所述的方法，其中，所述激光束具有在100nm和400nm之间的波长。
15.根据权利要求8所述的方法，其中，所述激光束具有在300毫焦耳/cm2和1500毫焦耳/cm2之间的能级。
16.一种集成电路结构，包括：
金属焊盘，处在衬底上方；
钝化层，处在所述金属焊盘上方；
凸块下金属UBM，处在所述钝化层上方并且延伸进入到所述钝化层的开口中，从而电连接至所述金属焊盘，其中，所述UBM包括：
钛阻挡层；以及
铜种层，处在所述钛阻挡层上方；以及
金属凸块，处在所述UBM的第一部分上方并且与其垂直重叠，其中，所述UBM进一步包括不与所述金属凸块垂直重叠的第二部分；
其中，所述UBM的所述第二部分形成包围所述UBM的所述第一部分的环，并且所述UBM的所述第二部分包括所述钛阻挡层的部分和所述铜种层的部分。
17.根据权利要求16所述的集成电路结构，其中，所述环的所有部分具有均匀的宽度。
18.根据权利要求17所述的集成电路结构，其中，所述均匀的宽度在1μm和10μm之间。
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