JPWO2017134799A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2017134799A1 JPWO2017134799A1 JP2017565352A JP2017565352A JPWO2017134799A1 JP WO2017134799 A1 JPWO2017134799 A1 JP WO2017134799A1 JP 2017565352 A JP2017565352 A JP 2017565352A JP 2017565352 A JP2017565352 A JP 2017565352A JP WO2017134799 A1 JPWO2017134799 A1 JP WO2017134799A1
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- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
まず、本発明の前提となる技術(前提技術)について説明する。
図1は、本発明の実施の形態1による半導体装置1の構成の一例を示す図であり、半導体装置1の断面を示している。
図2は、本発明の実施の形態2による半導体装置17の構成の一例を示す図であり、半導体装置17を放熱板18側から見た図である。
図3は、本発明の実施の形態3による半導体装置19の構成の一例を示す図であり、半導体装置19を放熱板20側から見た図である。
図4は、本発明の実施の形態4による半導体装置21の構成の一例を示す図であり、半導体装置21を放熱板22側から見た図である。
Claims (6)
- 半導体素子を内包する筐体と、
前記筐体の底面に配置され、一部が前記筐体を超えて外部に延在するように設けられた放熱板と、
前記半導体素子に電気的に接続され、一部が前記筐体から外部に前記放熱板と平行に突出して設けられた電極と、
前記筐体から突出した前記電極の露出部分と外部端子とを接合するネジと、
を備え、
前記放熱板は、少なくとも前記ネジに対向する部分の前記ネジ側に肉厚欠損部を有することを特徴とする、半導体装置。 - 前記放熱板は、前記ネジに対向する部分を含む前記外部に延在した全ての部分に前記肉厚欠損部を有することを特徴とする、請求項1に記載の半導体装置。
- 前記放熱板は、前記ネジに対向する部分のみに前記肉厚欠損部を有することを特徴とする、請求項1に記載の半導体装置。
- 半導体素子を内包する筐体と、
前記筐体の底面に配置され、一部が前記筐体を超えて外部に延在するように設けられた放熱板と、
前記半導体素子に電気的に接続され、一部が前記筐体から外部に前記放熱板と平行に突出して設けられた電極と、
前記筐体から突出した前記電極の露出部分と外部端子とを接合するネジと、
を備え、
前記放熱板は、前記ネジに対向する部分には設けられないことを特徴とする、半導体装置。 - 前記放熱板は、前記ネジに対向する部分に切り欠き部を有することを特徴とする、請求項4に記載の半導体装置。
- 前記放熱板は、前記ネジに対向する部分を囲む開口部を有することを特徴とする、請求項4に記載の半導体装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/053382 WO2017134799A1 (ja) | 2016-02-04 | 2016-02-04 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017134799A1 true JPWO2017134799A1 (ja) | 2018-04-19 |
JP6362800B2 JP6362800B2 (ja) | 2018-07-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2017565352A Active JP6362800B2 (ja) | 2016-02-04 | 2016-02-04 | 半導体装置 |
Country Status (5)
Country | Link |
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US (1) | US10438865B2 (ja) |
JP (1) | JP6362800B2 (ja) |
CN (1) | CN108604580B (ja) |
DE (1) | DE112016006367B4 (ja) |
WO (1) | WO2017134799A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108695280A (zh) * | 2018-07-09 | 2018-10-23 | 株洲中车奇宏散热技术有限公司 | 一种风冷陶瓷板绝缘散热器及耐高压绝缘散热方法 |
JP7193730B2 (ja) * | 2019-03-26 | 2022-12-21 | 三菱電機株式会社 | 半導体装置 |
USD1012871S1 (en) * | 2020-06-30 | 2024-01-30 | Roche Molecular Systems, Inc. | Circuit board sensor pad |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09153574A (ja) * | 1995-11-30 | 1997-06-10 | Mitsubishi Electric Corp | 半導体装置および半導体モジュール |
JP2003007966A (ja) * | 2001-06-19 | 2003-01-10 | Mitsubishi Electric Corp | 半導体装置 |
DE102006011995B3 (de) * | 2006-03-16 | 2007-11-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit segmentierter Grundplatte |
JP2011009370A (ja) * | 2009-06-24 | 2011-01-13 | Toshiba Corp | 半導体装置の固定具及びその取付構造 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3168901B2 (ja) * | 1996-02-22 | 2001-05-21 | 株式会社日立製作所 | パワー半導体モジュール |
JP3813098B2 (ja) * | 2002-02-14 | 2006-08-23 | 三菱電機株式会社 | 電力用半導体モジュール |
JP4097613B2 (ja) * | 2004-03-09 | 2008-06-11 | 三菱電機株式会社 | 半導体装置 |
JP4453498B2 (ja) * | 2004-09-22 | 2010-04-21 | 富士電機システムズ株式会社 | パワー半導体モジュールおよびその製造方法 |
JP4538359B2 (ja) * | 2005-03-31 | 2010-09-08 | 株式会社日立産機システム | 電気回路モジュール |
JP4760585B2 (ja) * | 2006-07-18 | 2011-08-31 | 三菱電機株式会社 | 電力用半導体装置 |
JP5252819B2 (ja) * | 2007-03-26 | 2013-07-31 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP4634498B2 (ja) * | 2008-11-28 | 2011-02-16 | 三菱電機株式会社 | 電力用半導体モジュール |
CN103314437B (zh) * | 2011-03-24 | 2016-03-30 | 三菱电机株式会社 | 功率半导体模块及电源单元装置 |
EP2840604B1 (en) * | 2012-04-16 | 2017-07-19 | Fuji Electric Co., Ltd. | Semiconductor device and cooler for semiconductor device |
DE112013007390B4 (de) * | 2013-08-29 | 2020-06-25 | Mitsubishi Electric Corporation | Halbleitermodul, Halbleitervorrichtung und Fahrzeug |
-
2016
- 2016-02-04 JP JP2017565352A patent/JP6362800B2/ja active Active
- 2016-02-04 WO PCT/JP2016/053382 patent/WO2017134799A1/ja active Application Filing
- 2016-02-04 CN CN201680080565.2A patent/CN108604580B/zh active Active
- 2016-02-04 DE DE112016006367.9T patent/DE112016006367B4/de active Active
- 2016-02-04 US US15/778,635 patent/US10438865B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09153574A (ja) * | 1995-11-30 | 1997-06-10 | Mitsubishi Electric Corp | 半導体装置および半導体モジュール |
JP2003007966A (ja) * | 2001-06-19 | 2003-01-10 | Mitsubishi Electric Corp | 半導体装置 |
DE102006011995B3 (de) * | 2006-03-16 | 2007-11-08 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit segmentierter Grundplatte |
JP2011009370A (ja) * | 2009-06-24 | 2011-01-13 | Toshiba Corp | 半導体装置の固定具及びその取付構造 |
Also Published As
Publication number | Publication date |
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JP6362800B2 (ja) | 2018-07-25 |
US10438865B2 (en) | 2019-10-08 |
CN108604580B (zh) | 2021-08-13 |
CN108604580A (zh) | 2018-09-28 |
US20180358279A1 (en) | 2018-12-13 |
DE112016006367B4 (de) | 2020-11-19 |
WO2017134799A1 (ja) | 2017-08-10 |
DE112016006367T5 (de) | 2018-10-18 |
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