JPWO2016199926A1 - ポリイミド前駆体組成物、及びポリイミド組成物 - Google Patents
ポリイミド前駆体組成物、及びポリイミド組成物 Download PDFInfo
- Publication number
- JPWO2016199926A1 JPWO2016199926A1 JP2017523736A JP2017523736A JPWO2016199926A1 JP WO2016199926 A1 JPWO2016199926 A1 JP WO2016199926A1 JP 2017523736 A JP2017523736 A JP 2017523736A JP 2017523736 A JP2017523736 A JP 2017523736A JP WO2016199926 A1 JPWO2016199926 A1 JP WO2016199926A1
- Authority
- JP
- Japan
- Prior art keywords
- polyimide
- polyimide precursor
- group
- film
- aromatic ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 531
- 239000004642 Polyimide Substances 0.000 title claims abstract description 383
- 239000000203 mixture Substances 0.000 title claims abstract description 203
- 239000002243 precursor Substances 0.000 title claims abstract description 198
- 239000010419 fine particle Substances 0.000 claims abstract description 144
- 230000003287 optical effect Effects 0.000 claims abstract description 127
- 239000002904 solvent Substances 0.000 claims description 89
- 239000000126 substance Substances 0.000 claims description 78
- 239000006185 dispersion Substances 0.000 claims description 70
- 229920005575 poly(amic acid) Polymers 0.000 claims description 66
- 125000003118 aryl group Chemical group 0.000 claims description 62
- 239000010408 film Substances 0.000 claims description 60
- 125000002723 alicyclic group Chemical group 0.000 claims description 58
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 claims description 49
- 229910000018 strontium carbonate Inorganic materials 0.000 claims description 49
- 238000006243 chemical reaction Methods 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 25
- 125000004432 carbon atom Chemical group C* 0.000 claims description 22
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 125000005103 alkyl silyl group Chemical group 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000000243 solution Substances 0.000 description 128
- 239000000758 substrate Substances 0.000 description 61
- 150000004985 diamines Chemical class 0.000 description 49
- 238000000034 method Methods 0.000 description 44
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 43
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 40
- 239000002966 varnish Substances 0.000 description 35
- 239000010410 layer Substances 0.000 description 33
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 33
- -1 polyethylene terephthalate Polymers 0.000 description 31
- 239000005340 laminated glass Substances 0.000 description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 20
- 239000003795 chemical substances by application Substances 0.000 description 20
- 229910001873 dinitrogen Inorganic materials 0.000 description 20
- 229910052760 oxygen Inorganic materials 0.000 description 20
- 239000001301 oxygen Substances 0.000 description 20
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 239000002270 dispersing agent Substances 0.000 description 17
- 239000012299 nitrogen atmosphere Substances 0.000 description 17
- 238000003756 stirring Methods 0.000 description 14
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 239000007788 liquid Substances 0.000 description 13
- 229920000642 polymer Polymers 0.000 description 13
- OVASAEXSPYGGES-UHFFFAOYSA-N C1C2C(C(OC3=O)=O)C3C1CC2(C1=O)CCC21CC1CC2C2C(=O)OC(=O)C12 Chemical compound C1C2C(C(OC3=O)=O)C3C1CC2(C1=O)CCC21CC1CC2C2C(=O)OC(=O)C12 OVASAEXSPYGGES-UHFFFAOYSA-N 0.000 description 12
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 12
- 239000000178 monomer Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 12
- 125000001153 fluoro group Chemical group F* 0.000 description 11
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 10
- 125000001931 aliphatic group Chemical group 0.000 description 10
- 239000002585 base Substances 0.000 description 10
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 238000004817 gas chromatography Methods 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 238000006358 imidation reaction Methods 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 6
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 6
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- FYYYKXFEKMGYLZ-UHFFFAOYSA-N 4-(1,3-dioxo-2-benzofuran-5-yl)-2-benzofuran-1,3-dione Chemical compound C=1C=C2C(=O)OC(=O)C2=CC=1C1=CC=CC2=C1C(=O)OC2=O FYYYKXFEKMGYLZ-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002952 polymeric resin Substances 0.000 description 5
- 229920003002 synthetic resin Polymers 0.000 description 5
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 4
- 150000005690 diesters Chemical class 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- JBFHTYHTHYHCDJ-UHFFFAOYSA-N gamma-caprolactone Chemical compound CCC1CCC(=O)O1 JBFHTYHTHYHCDJ-UHFFFAOYSA-N 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000001746 injection moulding Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- 239000012788 optical film Substances 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 4
- 238000007363 ring formation reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 150000003457 sulfones Chemical class 0.000 description 4
- 239000012756 surface treatment agent Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005160 1H NMR spectroscopy Methods 0.000 description 3
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical compound C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 description 3
- WVOLTBSCXRRQFR-SJORKVTESA-N Cannabidiolic acid Natural products OC1=C(C(O)=O)C(CCCCC)=CC(O)=C1[C@@H]1[C@@H](C(C)=C)CCC(C)=C1 WVOLTBSCXRRQFR-SJORKVTESA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- WVOLTBSCXRRQFR-DLBZAZTESA-N cannabidiolic acid Chemical compound OC1=C(C(O)=O)C(CCCCC)=CC(O)=C1[C@H]1[C@H](C(C)=C)CCC(C)=C1 WVOLTBSCXRRQFR-DLBZAZTESA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 150000003512 tertiary amines Chemical class 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- UIZIZIPEEWDBCL-UHFFFAOYSA-N (4-aminophenyl) 4-[4-(4-aminophenoxy)carbonylphenyl]benzoate Chemical compound C1=CC(N)=CC=C1OC(=O)C1=CC=C(C=2C=CC(=CC=2)C(=O)OC=2C=CC(N)=CC=2)C=C1 UIZIZIPEEWDBCL-UHFFFAOYSA-N 0.000 description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 2
- HDGLPTVARHLGMV-UHFFFAOYSA-N 2-amino-4-(1,1,1,3,3,3-hexafluoropropan-2-yl)phenol Chemical compound NC1=CC(C(C(F)(F)F)C(F)(F)F)=CC=C1O HDGLPTVARHLGMV-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- HORNXRXVQWOLPJ-UHFFFAOYSA-N 3-chlorophenol Chemical compound OC1=CC=CC(Cl)=C1 HORNXRXVQWOLPJ-UHFFFAOYSA-N 0.000 description 2
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical compound CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 2
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 2
- HHLMWQDRYZAENA-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 HHLMWQDRYZAENA-UHFFFAOYSA-N 0.000 description 2
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 2
- XPAQFJJCWGSXGJ-UHFFFAOYSA-N 4-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(N)C=C1 XPAQFJJCWGSXGJ-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- QGLBZNZGBLRJGS-UHFFFAOYSA-N Dihydro-3-methyl-2(3H)-furanone Chemical compound CC1CCOC1=O QGLBZNZGBLRJGS-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 125000006267 biphenyl group Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000021615 conjugation Effects 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 239000003759 ester based solvent Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- GAEKPEKOJKCEMS-UHFFFAOYSA-N gamma-valerolactone Chemical compound CC1CCC(=O)O1 GAEKPEKOJKCEMS-UHFFFAOYSA-N 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 2
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 2
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- CZRKJHRIILZWRC-UHFFFAOYSA-N methyl acetate;propane-1,2-diol Chemical compound COC(C)=O.CC(O)CO CZRKJHRIILZWRC-UHFFFAOYSA-N 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 235000010755 mineral Nutrition 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- CTSLXHKWHWQRSH-UHFFFAOYSA-N oxalyl chloride Chemical compound ClC(=O)C(Cl)=O CTSLXHKWHWQRSH-UHFFFAOYSA-N 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000000518 rheometry Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 2
- SIOVKLKJSOKLIF-HJWRWDBZSA-N trimethylsilyl (1z)-n-trimethylsilylethanimidate Chemical compound C[Si](C)(C)OC(/C)=N\[Si](C)(C)C SIOVKLKJSOKLIF-HJWRWDBZSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 2
- UGCMFUQMPWJOON-UHFFFAOYSA-N (1-cycloheptylcycloheptyl)methanediamine Chemical compound C1CCCCCC1C1(C(N)N)CCCCCC1 UGCMFUQMPWJOON-UHFFFAOYSA-N 0.000 description 1
- GWNMOARSGRXJMV-UHFFFAOYSA-N (1-cycloheptylcycloheptyl)oxymethanediamine Chemical compound C1CCCCCC1C1(OC(N)N)CCCCCC1 GWNMOARSGRXJMV-UHFFFAOYSA-N 0.000 description 1
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- JDGFELYPUWNNGR-UHFFFAOYSA-N 1,2,3,3a,4,5,6,6a-octahydropentalene-1,3,4,6-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C2C(C(=O)O)CC(C(O)=O)C21 JDGFELYPUWNNGR-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- MNKDMOZTFOSBSA-UHFFFAOYSA-N 1-(1-aminocycloheptyl)cycloheptan-1-amine Chemical compound C1CCCCCC1(N)C1(N)CCCCCC1 MNKDMOZTFOSBSA-UHFFFAOYSA-N 0.000 description 1
- SPJXZYLLLWOSLQ-UHFFFAOYSA-N 1-[(1-aminocyclohexyl)methyl]cyclohexan-1-amine Chemical compound C1CCCCC1(N)CC1(N)CCCCC1 SPJXZYLLLWOSLQ-UHFFFAOYSA-N 0.000 description 1
- RPOHXHHHVSGUMN-UHFFFAOYSA-N 1-n,4-n-bis(4-aminophenyl)benzene-1,4-dicarboxamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=C(C(=O)NC=2C=CC(N)=CC=2)C=C1 RPOHXHHHVSGUMN-UHFFFAOYSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- LHODINBEPHELLZ-UHFFFAOYSA-N 2-(2-carboxybenzoyl)oxysulfonyloxycarbonylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)OS(=O)(=O)OC(=O)C1=CC=CC=C1C(O)=O LHODINBEPHELLZ-UHFFFAOYSA-N 0.000 description 1
- BEBVJSBFUZVWMS-UHFFFAOYSA-N 2-(2-methylpropyl)cyclohexane-1,4-diamine Chemical compound CC(C)CC1CC(N)CCC1N BEBVJSBFUZVWMS-UHFFFAOYSA-N 0.000 description 1
- MXPYJVUYLVNEBB-UHFFFAOYSA-N 2-[2-(2-carboxybenzoyl)oxycarbonylbenzoyl]oxycarbonylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)OC(=O)C1=CC=CC=C1C(=O)OC(=O)C1=CC=CC=C1C(O)=O MXPYJVUYLVNEBB-UHFFFAOYSA-N 0.000 description 1
- IAEVEDMYEYMTSE-UHFFFAOYSA-N 2-butan-2-ylcyclohexane-1,4-diamine Chemical compound CCC(C)C1CC(N)CCC1N IAEVEDMYEYMTSE-UHFFFAOYSA-N 0.000 description 1
- HIEBSORULQQANM-UHFFFAOYSA-N 2-butylcyclohexane-1,4-diamine Chemical compound CCCCC1CC(N)CCC1N HIEBSORULQQANM-UHFFFAOYSA-N 0.000 description 1
- ISPYQTSUDJAMAB-UHFFFAOYSA-N 2-chlorophenol Chemical compound OC1=CC=CC=C1Cl ISPYQTSUDJAMAB-UHFFFAOYSA-N 0.000 description 1
- FMZFBOHWVULQIY-UHFFFAOYSA-N 2-ethylcyclohexane-1,4-diamine Chemical compound CCC1CC(N)CCC1N FMZFBOHWVULQIY-UHFFFAOYSA-N 0.000 description 1
- SFHLLWPKGUSQIK-UHFFFAOYSA-N 2-methylcyclohexane-1,4-diamine Chemical compound CC1CC(N)CCC1N SFHLLWPKGUSQIK-UHFFFAOYSA-N 0.000 description 1
- FTYSULAJAVFRBZ-UHFFFAOYSA-N 2-n,4-n-bis(4-aminophenyl)-1,3,5-triazine-2,4,6-triamine Chemical compound C1=CC(N)=CC=C1NC1=NC(N)=NC(NC=2C=CC(N)=CC=2)=N1 FTYSULAJAVFRBZ-UHFFFAOYSA-N 0.000 description 1
- ZFQAHQFOCBOMRX-UHFFFAOYSA-N 2-n,4-n-bis(4-aminophenyl)-6-ethyl-1,3,5-triazine-2,4-diamine Chemical compound N=1C(NC=2C=CC(N)=CC=2)=NC(CC)=NC=1NC1=CC=C(N)C=C1 ZFQAHQFOCBOMRX-UHFFFAOYSA-N 0.000 description 1
- VVFMZHWAQNSESG-UHFFFAOYSA-N 2-n,4-n-bis(4-aminophenyl)-6-n-methyl-1,3,5-triazine-2,4,6-triamine Chemical compound N=1C(NC=2C=CC(N)=CC=2)=NC(NC)=NC=1NC1=CC=C(N)C=C1 VVFMZHWAQNSESG-UHFFFAOYSA-N 0.000 description 1
- NJHOBWAEBBSZLP-UHFFFAOYSA-N 2-n,4-n-bis(4-aminophenyl)-6-n-phenyl-1,3,5-triazine-2,4,6-triamine Chemical compound C1=CC(N)=CC=C1NC1=NC(NC=2C=CC=CC=2)=NC(NC=2C=CC(N)=CC=2)=N1 NJHOBWAEBBSZLP-UHFFFAOYSA-N 0.000 description 1
- ALBWHZWLFAHNRI-UHFFFAOYSA-N 2-propan-2-ylcyclohexane-1,4-diamine Chemical compound CC(C)C1CC(N)CCC1N ALBWHZWLFAHNRI-UHFFFAOYSA-N 0.000 description 1
- WNRDZWNCHXTBTQ-UHFFFAOYSA-N 2-propylcyclohexane-1,4-diamine Chemical compound CCCC1CC(N)CCC1N WNRDZWNCHXTBTQ-UHFFFAOYSA-N 0.000 description 1
- RKBNPLYPKZRNEF-UHFFFAOYSA-N 2-tert-butylcyclohexane-1,4-diamine Chemical compound CC(C)(C)C1CC(N)CCC1N RKBNPLYPKZRNEF-UHFFFAOYSA-N 0.000 description 1
- HUWXDEQWWKGHRV-UHFFFAOYSA-N 3,3'-Dichlorobenzidine Chemical group C1=C(Cl)C(N)=CC=C1C1=CC=C(N)C(Cl)=C1 HUWXDEQWWKGHRV-UHFFFAOYSA-N 0.000 description 1
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical group C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 1
- GTALYBOAEVNYOZ-UHFFFAOYSA-N 3-(2,3-dicarboxycyclohexyl)cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1C(C(=O)O)CCCC1C1C(C(O)=O)C(C(O)=O)CCC1 GTALYBOAEVNYOZ-UHFFFAOYSA-N 0.000 description 1
- NBAUUNCGSMAPFM-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=CC(C(O)=O)=C1C(O)=O NBAUUNCGSMAPFM-UHFFFAOYSA-N 0.000 description 1
- LXJLFVRAWOOQDR-UHFFFAOYSA-N 3-(3-aminophenoxy)aniline Chemical compound NC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 LXJLFVRAWOOQDR-UHFFFAOYSA-N 0.000 description 1
- NDXGRHCEHPFUSU-UHFFFAOYSA-N 3-(3-aminophenyl)aniline Chemical group NC1=CC=CC(C=2C=C(N)C=CC=2)=C1 NDXGRHCEHPFUSU-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- UCQABCHSIIXVOY-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]phenoxy]aniline Chemical group NC1=CC=CC(OC=2C=CC(=CC=2)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 UCQABCHSIIXVOY-UHFFFAOYSA-N 0.000 description 1
- NDAIXWYBUZNKLJ-UHFFFAOYSA-N 3-[[2',2'-bis(1-aminocyclohexyl)-5'-(3-aminophenoxy)-1,1,1',1'-tetramethyl-2-propan-2-ylidene-3,3'-spirobi[indene]-5-yl]oxy]aniline Chemical compound NC1(CCCCC1)C1(C(C2=CC=C(C=C2C11C(C(C2=CC=C(C=C12)OC1=CC(=CC=C1)N)(C)C)=C(C)C)OC1=CC(=CC=C1)N)(C)C)C1(CCCCC1)N NDAIXWYBUZNKLJ-UHFFFAOYSA-N 0.000 description 1
- UDKYPBUWOIPGDY-UHFFFAOYSA-N 3-amino-n-(4-aminophenyl)benzamide Chemical compound C1=CC(N)=CC=C1NC(=O)C1=CC=CC(N)=C1 UDKYPBUWOIPGDY-UHFFFAOYSA-N 0.000 description 1
- FFKSVVOWOROQIU-UHFFFAOYSA-N 4-(2,5-dioxooxolan-3-yl)-1,2,3,4-tetrahydronaphthalene-1,2-dicarboxylic acid Chemical compound C12=CC=CC=C2C(C(O)=O)C(C(=O)O)CC1C1CC(=O)OC1=O FFKSVVOWOROQIU-UHFFFAOYSA-N 0.000 description 1
- YARZEPAVWOMMHZ-UHFFFAOYSA-N 4-(3,4-dicarboxy-4-phenylcyclohexa-1,5-dien-1-yl)phthalic acid Chemical compound OC(=O)C1C=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)C=CC1(C(O)=O)C1=CC=CC=C1 YARZEPAVWOMMHZ-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- BKQWDTFZUNGWNV-UHFFFAOYSA-N 4-(3,4-dicarboxycyclohexyl)cyclohexane-1,2-dicarboxylic acid Chemical compound C1C(C(O)=O)C(C(=O)O)CCC1C1CC(C(O)=O)C(C(O)=O)CC1 BKQWDTFZUNGWNV-UHFFFAOYSA-N 0.000 description 1
- HLUQDUQCLMLYLO-UHFFFAOYSA-N 4-(3,4-dicarboxycyclohexyl)sulfanylcyclohexane-1,2-dicarboxylic acid Chemical compound C1C(C(O)=O)C(C(=O)O)CCC1SC1CC(C(O)=O)C(C(O)=O)CC1 HLUQDUQCLMLYLO-UHFFFAOYSA-N 0.000 description 1
- GTXJSEDZUCKPLC-UHFFFAOYSA-N 4-(3,4-dicarboxycyclohexyl)sulfonylcyclohexane-1,2-dicarboxylic acid Chemical compound C1C(C(O)=O)C(C(=O)O)CCC1S(=O)(=O)C1CC(C(O)=O)C(C(O)=O)CC1 GTXJSEDZUCKPLC-UHFFFAOYSA-N 0.000 description 1
- AIVVXPSKEVWKMY-UHFFFAOYSA-N 4-(3,4-dicarboxyphenoxy)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 AIVVXPSKEVWKMY-UHFFFAOYSA-N 0.000 description 1
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 1
- QNLCDRXVEPWSBQ-UHFFFAOYSA-N 4-(4,5-dicarboxy-5-phenylcyclohexa-1,3-dien-1-yl)phthalic acid Chemical compound OC(=O)C1=CC=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)CC1(C(O)=O)C1=CC=CC=C1 QNLCDRXVEPWSBQ-UHFFFAOYSA-N 0.000 description 1
- FWOLORXQTIGHFX-UHFFFAOYSA-N 4-(4-amino-2,3,5,6-tetrafluorophenyl)-2,3,5,6-tetrafluoroaniline Chemical compound FC1=C(F)C(N)=C(F)C(F)=C1C1=C(F)C(F)=C(N)C(F)=C1F FWOLORXQTIGHFX-UHFFFAOYSA-N 0.000 description 1
- LVNPGQZSPDFZNC-UHFFFAOYSA-N 4-(4-amino-3-fluorophenyl)-2-fluoroaniline Chemical group C1=C(F)C(N)=CC=C1C1=CC=C(N)C(F)=C1 LVNPGQZSPDFZNC-UHFFFAOYSA-N 0.000 description 1
- NTMNCGZUCLRMHK-UHFFFAOYSA-N 4-[(3,4-dicarboxycyclohexyl)methyl]cyclohexane-1,2-dicarboxylic acid Chemical compound C1C(C(O)=O)C(C(=O)O)CCC1CC1CC(C(O)=O)C(C(O)=O)CC1 NTMNCGZUCLRMHK-UHFFFAOYSA-N 0.000 description 1
- SDUIDNRYFMKHGE-UHFFFAOYSA-N 4-[2-(3,4-dicarboxycyclohexyl)-1,1,1,3-tetrafluoropropan-2-yl]cyclohexane-1,2-dicarboxylic acid Chemical compound C1C(C(O)=O)C(C(=O)O)CCC1C(CF)(C(F)(F)F)C1CC(C(O)=O)C(C(O)=O)CC1 SDUIDNRYFMKHGE-UHFFFAOYSA-N 0.000 description 1
- UFFLFXDNZXTURQ-UHFFFAOYSA-N 4-[2-(3,4-dicarboxycyclohexyl)propan-2-yl]cyclohexane-1,2-dicarboxylic acid Chemical compound C1CC(C(O)=O)C(C(O)=O)CC1C(C)(C)C1CCC(C(O)=O)C(C(O)=O)C1 UFFLFXDNZXTURQ-UHFFFAOYSA-N 0.000 description 1
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- LGTGOCSQAOUUFP-UHFFFAOYSA-N 4-amino-n-[4-[(4-aminobenzoyl)amino]phenyl]benzamide Chemical compound C1=CC(N)=CC=C1C(=O)NC(C=C1)=CC=C1NC(=O)C1=CC=C(N)C=C1 LGTGOCSQAOUUFP-UHFFFAOYSA-N 0.000 description 1
- AKGMGEBXJHRCGH-UHFFFAOYSA-N 4-chlorophenol;phenol Chemical compound OC1=CC=CC=C1.OC1=CC=C(Cl)C=C1 AKGMGEBXJHRCGH-UHFFFAOYSA-N 0.000 description 1
- YGYCECQIOXZODZ-UHFFFAOYSA-N 4415-87-6 Chemical compound O=C1OC(=O)C2C1C1C(=O)OC(=O)C12 YGYCECQIOXZODZ-UHFFFAOYSA-N 0.000 description 1
- VWRKHZDUJPWJKV-UHFFFAOYSA-N 6-(carboxymethyl)bicyclo[2.2.1]heptane-2,3,5-tricarboxylic acid Chemical compound C1C2C(C(O)=O)C(CC(=O)O)C1C(C(O)=O)C2C(O)=O VWRKHZDUJPWJKV-UHFFFAOYSA-N 0.000 description 1
- XRYJJJJNCOBNEY-UHFFFAOYSA-N 9-oxatricyclo[4.2.1.02,5]nonane-3,4,7,8-tetracarboxylic acid Chemical compound O1C2C3C(C(=O)O)C(C(O)=O)C3C1C(C(O)=O)C2C(O)=O XRYJJJJNCOBNEY-UHFFFAOYSA-N 0.000 description 1
- AOCHOTUPNIVNIE-UHFFFAOYSA-N C1CC(CCC1CN)CN.C1C(CC1N)N Chemical compound C1CC(CCC1CN)CN.C1C(CC1N)N AOCHOTUPNIVNIE-UHFFFAOYSA-N 0.000 description 1
- 0 CCC*(CC)CC*(N=O)=C Chemical compound CCC*(CC)CC*(N=O)=C 0.000 description 1
- 229910021532 Calcite Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- ZPAKUZKMGJJMAA-UHFFFAOYSA-N Cyclohexane-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)CC1C(O)=O ZPAKUZKMGJJMAA-UHFFFAOYSA-N 0.000 description 1
- XCOBLONWWXQEBS-KPKJPENVSA-N N,O-bis(trimethylsilyl)trifluoroacetamide Chemical compound C[Si](C)(C)O\C(C(F)(F)F)=N\[Si](C)(C)C XCOBLONWWXQEBS-KPKJPENVSA-N 0.000 description 1
- RPOSPXSNBLIDAZ-UHFFFAOYSA-N NC=1C=C(OC2=CC(=CC=C2)OC2=CC(=CC=C2)N)C=CC1.NC1=CC=C(OC2=CC(=CC=C2)OC2=CC=C(C=C2)N)C=C1 Chemical compound NC=1C=C(OC2=CC(=CC=C2)OC2=CC(=CC=C2)N)C=CC1.NC1=CC=C(OC2=CC(=CC=C2)OC2=CC=C(C=C2)N)C=C1 RPOSPXSNBLIDAZ-UHFFFAOYSA-N 0.000 description 1
- IKGATDHNNVEMQB-UHFFFAOYSA-N O-[1-(1-aminooxycycloheptyl)cycloheptyl]hydroxylamine Chemical compound NOC1(CCCCCC1)C1(CCCCCC1)ON IKGATDHNNVEMQB-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- CJYIPJMCGHGFNN-UHFFFAOYSA-N bicyclo[2.2.1]heptane-2,3,5,6-tetracarboxylic acid Chemical compound C1C2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O CJYIPJMCGHGFNN-UHFFFAOYSA-N 0.000 description 1
- BKDVBBSUAGJUBA-UHFFFAOYSA-N bicyclo[2.2.2]oct-7-ene-2,3,5,6-tetracarboxylic acid Chemical compound C1=CC2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O BKDVBBSUAGJUBA-UHFFFAOYSA-N 0.000 description 1
- XQBSPQLKNWMPMG-UHFFFAOYSA-N bicyclo[2.2.2]octane-2,3,5,6-tetracarboxylic acid Chemical compound C1CC2C(C(O)=O)C(C(=O)O)C1C(C(O)=O)C2C(O)=O XQBSPQLKNWMPMG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CFTXGNJIXHFHTH-UHFFFAOYSA-N bis(4-aminophenyl) benzene-1,4-dicarboxylate Chemical compound C1=CC(N)=CC=C1OC(=O)C1=CC=C(C(=O)OC=2C=CC(N)=CC=2)C=C1 CFTXGNJIXHFHTH-UHFFFAOYSA-N 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012320 chlorinating reagent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 229910021446 cobalt carbonate Inorganic materials 0.000 description 1
- ZOTKGJBKKKVBJZ-UHFFFAOYSA-L cobalt(2+);carbonate Chemical compound [Co+2].[O-]C([O-])=O ZOTKGJBKKKVBJZ-UHFFFAOYSA-L 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- CURBACXRQKTCKZ-UHFFFAOYSA-N cyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)C(C(O)=O)C1C(O)=O CURBACXRQKTCKZ-UHFFFAOYSA-N 0.000 description 1
- SSJXIUAHEKJCMH-UHFFFAOYSA-N cyclohexane-1,2-diamine Chemical compound NC1CCCCC1N SSJXIUAHEKJCMH-UHFFFAOYSA-N 0.000 description 1
- HRYUOPWKEXOLLL-UHFFFAOYSA-N dec-3-ene-1,2,7,8-tetracarboxylic acid Chemical compound CCC(C(O)=O)C(C(O)=O)CCC=CC(C(O)=O)CC(O)=O HRYUOPWKEXOLLL-UHFFFAOYSA-N 0.000 description 1
- GUIAWEJKSYXUFP-UHFFFAOYSA-N decane-2,3,6,7-tetracarboxylic acid Chemical compound CCC(C(CCC(C(CC)C(=O)O)C(=O)O)C(=O)O)C(=O)O GUIAWEJKSYXUFP-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000004128 high performance liquid chromatography Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 150000003949 imides Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N iso-butene Natural products CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 229940093474 manganese carbonate Drugs 0.000 description 1
- 235000006748 manganese carbonate Nutrition 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- SEEYREPSKCQBBF-UHFFFAOYSA-N n-methylmaleimide Chemical compound CN1C(=O)C=CC1=O SEEYREPSKCQBBF-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000013615 primer Substances 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
- C08G73/1078—Partially aromatic polyimides wholly aromatic in the diamino moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/14—Polyamide-imides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/24—Acids; Salts thereof
- C08K3/26—Carbonates; Bicarbonates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0277—Bendability or stretchability details
- H05K1/028—Bending or folding regions of flexible printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/724—Permeability to gases, adsorption
- B32B2307/7242—Non-permeable
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/12—Photovoltaic modules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/208—Touch screens
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2206—Oxides; Hydroxides of metals of calcium, strontium or barium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/24—Acids; Salts thereof
- C08K3/26—Carbonates; Bicarbonates
- C08K2003/262—Alkali metal carbonates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/24—Acids; Salts thereof
- C08K3/26—Carbonates; Bicarbonates
- C08K2003/265—Calcium, strontium or barium carbonate
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0108—Transparent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Human Computer Interaction (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Organic Insulating Materials (AREA)
- Laminated Bodies (AREA)
Abstract
Description
1. ポリイミド前駆体(A1)と、光学異方性を有する微粒子(B)とを含むことを特徴とするポリイミド前駆体組成物。
2. 前記ポリイミド前駆体(A1)が、下記化学式(1)で表される繰り返し単位の少なくとも1種を含むことを特徴とする前記項1に記載のポリイミド前駆体組成物。
(式中、X1は芳香族環または脂環構造を有する4価の基であり、Y1は芳香族環または脂環構造を有する2価の基であり、R1、R2はそれぞれ独立に水素、炭素数1〜6のアルキル基、または炭素数3〜9のアルキルシリル基である。)
3. X1が脂環構造を有する4価の基であり、Y1が脂環構造を有する2価の基である化学式(1)で表される繰り返し単位の含有量が、全繰り返し単位に対して、50モル%以下であることを特徴とする前記項2に記載のポリイミド前駆体組成物。
4. 化学式(1)中のX1が芳香族環を有する4価の基であり、Y1が芳香族環を有する2価の基であることを特徴とする前記項2に記載のポリイミド前駆体組成物。
5. 化学式(1)中のX1が脂環構造を有する4価の基であり、Y1が芳香族環を有する2価の基であることを特徴とする前記項2に記載のポリイミド前駆体組成物。
6. 化学式(1)中のX1が芳香族環を有する4価の基であり、Y1が脂環構造を有する2価の基であることを特徴とする前記項2に記載のポリイミド前駆体組成物。
7. 前記光学異方性を有する微粒子(B)が、炭酸ストロンチウムであることを特徴とする前記項1〜6のいずれかに記載のポリイミド前駆体組成物。
9. 前記ポリイミド(A2)が、下記化学式(7)で表される繰り返し単位の少なくとも1種を含むことを特徴とする前記項8に記載のポリイミド組成物。
(式中、X2は芳香族環または脂環構造を有する4価の基であり、Y2は芳香族環または脂環構造を有する2価の基である。)
10. 前記項1〜7のいずれかに記載のポリイミド前駆体組成物から得られることを特徴とするポリイミド組成物。
11. 前記項1〜7のいずれかに記載のポリイミド前駆体組成物から得られるポリイミド組成物、又は前記項8〜9のいずれかに記載のポリイミド組成物からなることを特徴とするポリイミドフィルム。
13. 前記項11記載のポリイミドフィルムと、少なくとも1層のガスバリヤ層を有することを特徴とするポリイミドフィルム積層体。
14. 前記項11記載のポリイミドフィルムと、少なくとも1層の薄膜トランジスタを有することを特徴とするポリイミドフィルム積層体。
15. 前記項11記載のポリイミドフィルムと、少なくとも1層の導電層を有すること特徴とする前記項12または13に記載のポリイミドフィルム積層体。
17. 前記項16に記載のワニスを用いて得られたことを特徴とするポリイミド組成物。
18. 前記項16に記載のワニスを用いて得られたことを特徴とするポリイミドフィルム。
20. 前記項1〜7のいずれかに記載のポリイミド前駆体組成物から得られるポリイミド組成物、又は前記項8〜9のいずれかに記載のポリイミド組成物を含むことを特徴とする表示デバイス、センサーデバイス、光電変換デバイス、または光学デバイス。
(式中、X3は芳香族環または脂環構造を有する4価の基であり、Y3は芳香族環または脂環構造を有する2価の基である。ただし、式中のカルボキシル基(−COOH)は、塩基と塩を形成していてもよい。)
22. 下記化学式(8)で表される繰り返し単位を含むポリアミック酸(A3)と、光学異方性を有する微粒子(B)と、溶媒(C)とを含む微粒子分散液。
(式中、X1は芳香族環または脂環構造を有する4価の基であり、Y1は芳香族環または脂環構造を有する2価の基であり、R1、R2はそれぞれ独立に水素、炭素数1〜6のアルキル基、または炭素数3〜9のアルキルシリル基である。)
ポリイミド前駆体(A1)は、例えば、前記化学式(1)で表される繰り返し単位の少なくとも1種を含むものである。
(式中、R31〜R36は、それぞれ独立に直接結合、または、2価の有機基である。R41〜R47は、それぞれ独立に 式:−CH2−、−CH=CH−、−CH2CH2−、−O−、−S−で表される基よりなる群から選択される1種を示す。)
(式中、W1は直接結合、または、2価の有機基であり、n11〜n13は、それぞれ独立に0〜4の整数を表し、R51、R52、R53は、それぞれ独立に炭素数1〜6のアルキル基、ハロゲン基、水酸基、カルボキシル基、またはトリフルオロメチル基である。)
(式中、V1、V2は、それぞれ独立に直接結合、または、2価の有機基であり、n21〜n26は、それぞれ独立に0〜4の整数を表し、R81〜R86は、それぞれ独立に炭素数1〜6のアルキル基、ハロゲン基、水酸基、カルボキシル基、またはトリフルオロメチル基であり、R91、R92、R93は、それぞれ独立に 式:−CH2−、−CH=CH−、−CH2CH2−、−O−、−S−で表される基よりなる群から選択される1種である。)
1)ポリアミド酸(R1及びR2が水素)、
2)ポリアミド酸エステル(R1及びR2の少なくとも一部がアルキル基)、
3)4)ポリアミド酸シリルエステル(R1及びR2の少なくとも一部がアルキルシリル基)、
に分類することができる。そして、本発明のポリイミド前駆体(A1)は、この分類ごとに、以下の製造方法により容易に製造することができる。ただし、本発明のポリイミド前駆体(A1)の製造方法は、以下の製造方法に限定されるものではない。
本発明のポリイミド前駆体(A1)は、溶媒中でテトラカルボン酸成分としてのテトラカルボン酸二無水物とジアミン成分とを略等モル、好ましくはテトラカルボン酸成分に対するジアミン成分のモル比[ジアミン成分のモル数/テトラカルボン酸成分のモル数]が好ましくは0.90〜1.10、より好ましくは0.95〜1.05の割合で、例えば120℃以下の比較的低温度でイミド化を抑制しながら反応することによって、ポリイミド前駆体溶液組成物として好適に得ることができる。
テトラカルボン酸二無水物を任意のアルコールと反応させ、ジエステルジカルボン酸を得た後、塩素化試薬(チオニルクロライド、オキサリルクロライドなど)と反応させ、ジエステルジカルボン酸クロライドを得る。このジエステルジカルボン酸クロライドとジアミンを−20〜120℃、好ましくは−5〜80℃の範囲で1〜72時間攪拌することで、ポリイミド前駆体が得られる。80℃以上で反応させる場合、分子量が重合時の温度履歴に依存して変動し、また熱によりイミド化が進行することから、ポリイミド前駆体を安定して製造できなくなる可能性がある。また、ジエステルジカルボン酸とジアミンを、リン系縮合剤や、カルボジイミド縮合剤などを用いて脱水縮合することでも、簡便にポリイミド前駆体が得られる。
あらかじめ、ジアミンとシリル化剤を反応させ、シリル化されたジアミンを得る。必要に応じて、蒸留等により、シリル化されたジアミンの精製を行う。そして、脱水された溶剤中にシリル化されたジアミンを溶解させておき、攪拌しながら、テトラカルボン酸二無水物を徐々に添加し、0〜120℃、好ましくは5〜80℃の範囲で1〜72時間攪拌することで、ポリイミド前駆体が得られる。80℃以上で反応させる場合、分子量が重合時の温度履歴に依存して変動し、また熱によりイミド化が進行することから、ポリイミド前駆体を安定して製造できなくなる可能性がある。
1)の方法で得られたポリアミド酸溶液とシリル化剤を混合し、0〜120℃、好ましくは5〜80℃の範囲で1〜72時間攪拌することで、ポリイミド前駆体が得られる。80℃以上で反応させる場合、分子量が重合時の温度履歴に依存して変動し、また熱によりイミド化が進行することから、ポリイミド前駆体を安定して製造できなくなる可能性がある。
ポリイミド(A2)は、特に限定されるわけではないが、ポリイミド前駆体(A1)から得られ、例えば、前記化学式(7)で表される繰り返し単位の少なくとも1種を含むものである。
光学異方性を有する微粒子(B)は、光学異方性を有するものであれば特に限定されず使用することができる。
本発明のある実施態様においては、用いる炭酸ストロンチウム微粒子等の光学異方性を有する微粒子(B)は、下記化学式(8)で表される繰り返し単位を含むポリアミック酸(A3)で表面処理されている光学異方性を有する微粒子粉末であることが好ましい。
本発明のある実施態様においては、用いる光学異方性を有する微粒子(B)の分散液は、前記化学式(8)で表される繰り返し単位を含むポリアミック酸(A3)と、光学異方性を有する微粒子(B)と、溶媒とを含む微粒子分散液であることが好ましい。
本発明のポリイミド前駆体組成物は、少なくとも1種のポリイミド前駆体(A1)と、少なくとも1種の光学異方性を有する微粒子(B)とを含むものである。本発明のポリイミド組成物は、少なくとも1種のポリイミド(A2)と、少なくとも1種の光学異方性を有する微粒子(B)とを含むものである。ポリイミドに光学異方性を有する微粒子(B)を加えることにより、ポリイミド本来の特性を保ちつつ、厚み方向及び面内方向の位相差を低下させることができる。
[フィルムの面内方向位相差(Re)、厚み方向位相差(Rth)]
膜厚10μmのポリイミドフィルムを試験片とし、王子計測器社製 位相差測定装置(KOBRA−WR)を用い、Re、Rthを測定した。Rth入射角を40°としてフィルムの位相差測定を行った。得られた位相差より、膜厚10μmのフィルムの厚み方向の位相差を求めた。
紫外可視分光光度計/V−650DS(日本分光製)を用いて、膜厚10μmのポリイミドフィルムの全光透過率(380nm〜780nmにおける平均透過率)における光透過率を測定した。
ポリイミドフィルムをIEC−540(S)規格のダンベル形状に打ち抜いて試験片(幅:4mm)とし、ORIENTEC社製TENSILONを用いて、チャック間長30mm、引張速度2mm/分で、初期の引張弾性率、破断点伸度、破断点強度を測定した。
ポリイミドフィルムを幅4mmの短冊状に切り取って試験片とし、TMA/SS6100 (エスアイアイ・ナノテクノロジー株式会社製)を用い、チャック間長15mm、荷重2g、昇温速度20℃/分で500℃まで昇温した。得られたTMA曲線から、100℃から250℃までの線熱膨張係数を求めた。
ポリイミドフィルムを試験片とし、TAインスツルメント社製 熱重量測定装置(Q5000IR)を用い、窒素気流中、昇温速度10℃/分で25℃から600℃まで昇温した。得られた重量曲線から、5%重量減少温度を求めた。
BAPB: 4,4’−ビス(4−アミノフェノキシ)ビフェニル〔純度:99.93%(HPLC分析)〕
PPD: p−フェニレンジアミン〔純度:99.9%(GC分析)〕
DABAN: 4,4’−ジアミノベンズアニリド〔純度:99.90%(GC分析)〕
1,4−tra−DACH:トランス−1,4−ジアミノシクロヘキサン〔純度:99.1%(GC分析)〕
4,4’−ODA: 4,4’−オキシジアニリン〔純度:99.9%(GC分析)〕
TFMB: 2,2’−ビス(トリフルオロメチル)ベンジジン〔純度:99.83%(GC分析)〕
m−TD: 2,2’−ジメチル−4,4’−ジアミノビフェニル〔純度:99.85%(GC分析)〕
[テトラカルボン酸成分]
CpODA: ノルボルナン−2−スピロ−α−シクロペンタノン−α’−スピロ−2’’−ノルボルナン−5,5’’,6,6’’−テトラカルボン酸二無水物
s−BPDA: 3,3’,4,4’−ビフェニルテトラカルボン酸二無水物〔純度99.9%(H−NMR分析)〕
a−BPDA: 2,3,3’,4’−ビフェニルテトラカルボン酸二無水物〔純度99.6%(H−NMR分析)〕
H−PMDA: 1R,2S,4S,5R−シクロヘキサンテトラカルボン酸二無水物〔純度:99.9%(GC分析)〕
6FDA: 4,4’−(2,2−ヘキサフルオロイソプロピレン)ジフタル酸二無水物〔純度:99.77%(H−NMR分析)〕
CBDA: 1,2,3,4−シクロブタンテトラカルボン酸二無水物〔純度:99.9%(GC分析)〕
[溶媒]
NMP: N−メチル−2−ピロリドン
水: 純水
炭酸ストロンチウム分散液(1): 炭酸ストロンチウム分散液(1)として、特開2014−80360号公報に記載の炭酸ストロンチウムを用いた分散液(溶媒:NMP)を用意した。分散液(1)は、炭酸ストロンチウムの含有量:10質量%、平均長径36.7nm、平均アスペクト比2.3、長径200nm以上の粒子の含有率 0%であった。
窒素ガスで置換した反応容器中にDABAN 9.09g(0.04モル)とPPD 5.41g(0.05モル)とBAPB 3.68g(0.01モル)を入れ、N−メチル−2−ピロリドンを、仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 10質量%となる量の509.58gを加え、室温で1時間攪拌した。この溶液にCpODA 38.44g(0.10モル)を徐々に加えた。室温で12時間撹拌し、均一で粘稠なポリイミド前駆体(ポリアミック酸)溶液を得た。得られたポリイミド前駆体溶液 10gと炭酸ストロンチウム分散液(2) 40gをフリッチュ社の遊星型ボールミル(プレミアムラインP−7)を用いて、0.3mmのZrO2 50gを用いて、90分間処理し、炭酸ストロンチウム分散液(4)を得た。
窒素ガスで置換した反応容器中に1,4−tra−DACH 11.42g(0.100モル)を入れ、水を仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 15質量%となる量の231.37gを加え、室温で1時間攪拌した。この溶液に1,2−ジメチルイミダゾール 21.15g(0.220モル)を加え、室温で1時間攪拌した。この溶液にs−BPDA 28.67g(0.0975モル)とa−BPDA 0.74g(0.0025モル)を徐々に加えた。室温で12時間撹拌し、均一で粘稠なポリイミド前駆体(ポリアミック酸)溶液を得た。得られたポリイミド前駆体溶液 15gを分散剤として使用し、炭酸ストロンチウム分散液(3) 300gを分散させ、炭酸ストロンチウム分散液(5)(粒子径D50 79nm、D90 130nm、レーザ回折粒度分布測定装置測定)を得た。
窒素ガスで置換した反応容器中にDABAN 0.91g(0.004モル)とPPD 0.54g(0.005モル)とBAPB 0.37g(0.001モル)を入れ、N−メチル−2−ピロリドンを、仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 19質量%となる量の24.13gを加え、室温で1時間攪拌した。この溶液にCpODA 3.84g(0.010モル)を徐々に加えた。室温で12時間撹拌し、均一で粘稠なポリイミド前駆体溶液を得た。得られたポリイミド前駆体溶液に炭酸ストロンチウム分散液(1) 5.66gを加え、室温で1時間攪拌した。
窒素ガスで置換した反応容器中に炭酸ストロンチウム分散液(1) 2.83gとN−メチル−2−ピロリドン 25.08gを加え、室温で1時間攪拌した。この溶液にDABAN 0.91g(0.004モル)とPPD 0.54g(0.005モル)とBAPB 0.37g(0.001モル)を入れ、室温で1時間攪拌した。この溶液にCpODA 3.84g(0.010モル)を徐々に加えた。室温で12時間撹拌し、粘稠なポリイミド前駆体溶液を得た。
窒素ガスで置換した反応容器中に炭酸ストロンチウム分散液(1) 11.32gとN−メチル−2−ピロリドン 17.44gを加え、室温で1時間攪拌した。この溶液にDABAN 0.91g(0.004モル)とPPD 0.54g(0.005モル)とBAPB 0.37g(0.001モル)を入れ、室温で1時間攪拌した。この溶液にCpODA 3.84g(0.010モル)を徐々に加えた。室温で12時間撹拌し、粘稠なポリイミド前駆体溶液を得た。
〔実施例4〕
窒素ガスで置換した反応容器中に炭酸ストロンチウム分散液(1) 28.3gとN−メチル−2−ピロリドン 2.16gを加え、室温で1時間攪拌した。この溶液にDABAN 0.91g(0.004モル)とPPD 0.54g(0.005モル)とBAPB 0.37g(0.001モル)を入れ、室温で1時間攪拌した。この溶液にCpODA 3.84g(0.010モル)を徐々に加えた。室温で12時間撹拌し、粘稠なポリイミド前駆体溶液を得た。
窒素ガスで置換した反応容器中に炭酸ストロンチウム分散液(2) 2.83gとN−メチル−2−ピロリドン 25.08gを加え、室温で1時間攪拌した。この溶液にDABAN 0.91g(0.004モル)とPPD 0.54g(0.005モル)とBAPB 0.37g(0.001モル)を入れ、室温で1時間攪拌した。この溶液にCpODA 3.84g(0.010モル)を徐々に加えた。室温で12時間撹拌し、粘稠なポリイミド前駆体溶液を得た。
窒素ガスで置換した反応容器中にDABAN 0.91g(0.004モル)とPPD 0.54g(0.005モル)とBAPB 0.37g(0.001モル)を入れ、N−メチル−2−ピロリドンを、仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 19質量%となる量の24.13gを加え、室温で1時間攪拌した。この溶液にCpODA 3.84g(0.010モル)を徐々に加えた。室温で12時間撹拌し、均一で粘稠なポリイミド前駆体溶液を得た。得られたポリイミド前駆体溶液に炭酸ストロンチウム分散液(4)を 7.08gを加え、室温で1時間攪拌した。
窒素ガスで置換した反応容器中に炭酸ストロンチウム分散液(4) 7.08gとN−メチル−2−ピロリドン 24.13gを加え、室温で1時間攪拌した。この溶液にDABAN 0.91g(0.004モル)とPPD 0.54g(0.005モル)とBAPB 0.37g(0.001モル)を入れ、室温で1時間攪拌した。この溶液にCpODA 3.84g(0.010モル)を徐々に加えた。室温で12時間撹拌し、粘稠なポリイミド前駆体溶液を得た。
窒素ガスで置換した反応容器中にDABAN 0.91g(0.004モル)とPPD 0.54g(0.005モル)とBAPB 0.37g(0.001モル)を入れ、N−メチル−2−ピロリドンを、仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 19質量%となる量の24.13gを加え、室温で1時間攪拌した。この溶液にCpODA 3.84g(0.010モル)を徐々に加えた。室温で12時間撹拌し、均一で粘稠なポリイミド前駆体溶液を得た。
窒素ガスで置換した反応容器中に炭酸ストロンチウム分散液(5) 5.1gと水 18.54g と1,2−ジメチルイミダゾール 2.11g(0.0220モル)を加え、室温で1時間攪拌した。この溶液に1,4−tra−DACH 1.14g(0.0100モル)を入れ、室温で1時間攪拌した。この溶液にs−BPDA 2.87g(0.00975モル)とa−BPDA 0.07g(0.00025モル)を徐々に加えた。室温で12時間撹拌し、粘稠なポリイミド前駆体溶液を得た。
窒素ガスで置換した反応容器中に1,4−tra−DACH 11.42g(0.100モル)を入れ、水を仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 15質量%となる量の231.37gを加え、室温で1時間攪拌した。この溶液に1,2−ジメチルイミダゾール 21.15g(0.220モル)を加え、室温で1時間攪拌した。この溶液にs−BPDA 28.67g(0.0975モル)とa−BPDA 0.74g(0.0025モル)を徐々に加えた。50℃で12時間撹拌し、均一で粘稠なポリイミド前駆体溶液を得た。
窒素ガスで置換した反応容器中に4,4’−ODA 20.02g(0.100モル)を入れ、N,N−ジメチルアセトアミドを、仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 17質量%となる量の207.21gを加え、室温で1時間攪拌した。この溶液にPMDA−HS 22.41g(0.100ミリモル)を徐々に加えた。室温で12時間撹拌した。この溶液にトルエン30g加え、180℃で8時間加熱し、イミド化を行った。この溶液を大量の水に再沈殿させ、ろ過、乾燥した。得られた固体(ポリイミド) 10gをN−メチル−2−ピロリドン 40gに加え、室温で3時間攪拌し、均一で粘稠なポリイミド溶液を得た。この溶液に炭酸ストロンチウム分散液(2) 5.0gを加え、室温で1時間攪拌し、ポリイミド溶液を得た。
窒素ガスで置換した反応容器中に4,4’−ODA 20.02g(0.100モル)を入れ、N,N−ジメチルアセトアミドを、仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 17質量%となる量の207.21gを加え、室温で1時間攪拌した。この溶液にPMDA−HS 22.41g(0.100ミリモル)を徐々に加えた。室温で12時間撹拌した。この溶液にトルエン30g加え、180℃で8時間加熱し、イミド化を行った。この溶液を大量の水に再沈殿させ、ろ過、乾燥した。得られた固体(ポリイミド) 10gをN−メチル−2−ピロリドン 25gに加え、室温で3時間攪拌し、均一で粘稠なポリイミド溶液を得た。この溶液に炭酸ストロンチウム分散液(2) 20.0gを加え、室温で1時間攪拌し、ポリイミド溶液を得た。
窒素ガスで置換した反応容器中に4,4’−ODA 20.02g(0.100モル)を入れ、N,N−ジメチルアセトアミドを、仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 17質量%となる量の207.21gを加え、室温で1時間攪拌した。この溶液にPMDA−HS 22.41g(0.100ミリモル)を徐々に加えた。室温で12時間撹拌した。この溶液にトルエン30g加え、180℃で8時間加熱し、イミド化を行った。この溶液を大量の水に再沈殿させ、ろ過、乾燥した。得られた固体(ポリイミド) 10gをN−メチル−2−ピロリドン 40gに加え、室温で3時間攪拌し、均一で粘稠なポリイミド溶液を得た。
窒素ガスで置換した反応容器中に炭酸ストロンチウム分散液(1) 7.20gとN−メチル−2−ピロリドン 22.30gを加え、室温で1時間攪拌した。窒素ガスで置換した反応容器中にTFMB 3.20g(0.010モル)を入れ、室温で1時間攪拌した。この溶液にs−BPDA 0.88g(0.0030モル)と6FDA 3.11(0.0070モル)を徐々に加えた。室温で12時間撹拌した。この溶液に1,2−ジメチルイミダゾール 0.96g(0.010モル)を加え、室温で1時間攪拌し、均一で粘稠なポリイミド前駆体溶液を得た。
窒素ガスで置換した反応容器中にTFMB 32.02g(0.100モル)を入れ、N−メチル−2−ピロリドンを、仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 20質量%となる量の287.79gを加え、室温で1時間攪拌した。この溶液にs−BPDA 8.83g(0.030モル)と6FDA 31.10(0.070モル)を徐々に加えた。室温で12時間撹拌した。この溶液に1,2−ジメチルイミダゾール 0.96g(0.010モル)を加え、室温で1時間攪拌し、均一で粘稠なポリイミド前駆体溶液を得た。
窒素ガスで置換した反応容器中に炭酸ストロンチウム分散液(1) 2.13gとN−メチル−2−ピロリドン 31.24gを加え、室温で1時間攪拌した。この溶液にm−TD 2.12g(0.01モル)を入れ、室温で1時間攪拌した。この溶液にCpODA 0.38g(0.001モル)とCBDA 1.76g(0.009モル)を徐々に加えた。室温で12時間撹拌した。この溶液に1,2−ジメチルイミダゾール 0.10g(0.001モル)を加え、室温で1時間攪拌し、粘稠なポリイミド前駆体溶液を得た。
窒素ガスで置換した反応容器中にm−TD 2.12g(0.010モル)を入れ、DMAcを、仕込みモノマー総質量(ジアミン成分とカルボン酸成分の総和)が 12質量%となる量の31.24gを加え、室温で1時間攪拌した。この溶液にCBDA 1.76g(0.009モル)とCpODA 0.38g(0.001モル)を徐々に加えた。室温で12時間撹拌した。この溶液に、1,2−ジメチルイミダゾール 0.1g(0.001モル)を加え、室温で1時間攪拌し均一で粘稠なポリイミド前駆体溶液を得た。
Claims (19)
- ポリイミド前駆体(A1)と、光学異方性を有する微粒子(B)とを含むことを特徴とするポリイミド前駆体組成物。
- X1が脂環構造を有する4価の基であり、Y1が脂環構造を有する2価の基である化学式(1)で表される繰り返し単位の含有量が、全繰り返し単位に対して、50モル%以下であることを特徴とする請求項2に記載のポリイミド前駆体組成物。
- 化学式(1)中のX1が芳香族環を有する4価の基であり、Y1が芳香族環を有する2価の基であることを特徴とする請求項2に記載のポリイミド前駆体組成物。
- 化学式(1)中のX1が脂環構造を有する4価の基であり、Y1が芳香族環を有する2価の基であることを特徴とする請求項2に記載のポリイミド前駆体組成物。
- 化学式(1)中のX1が芳香族環を有する4価の基であり、Y1が脂環構造を有する2価の基であることを特徴とする請求項2に記載のポリイミド前駆体組成物。
- 前記光学異方性を有する微粒子(B)が、炭酸ストロンチウムであることを特徴とする請求項1〜6のいずれかに記載のポリイミド前駆体組成物。
- ポリイミド(A2)と、光学異方性を有する微粒子(B)とを含むことを特徴とするポリイミド組成物。
- 請求項1〜7のいずれかに記載のポリイミド前駆体組成物から得られることを特徴とするポリイミド組成物。
- 請求項1〜7のいずれかに記載のポリイミド前駆体組成物から得られるポリイミド組成物、又は請求項8〜9のいずれかに記載のポリイミド組成物からなることを特徴とするポリイミドフィルム。
- 請求項11記載のポリイミドフィルムと、少なくとも1層のガラス層を有することを特徴とするポリイミドフィルム積層体。
- 請求項11記載のポリイミドフィルムと、少なくとも1層のガスバリヤ層を有することを特徴とするポリイミドフィルム積層体。
- 請求項11記載のポリイミドフィルムと、少なくとも1層の薄膜トランジスタを有することを特徴とするポリイミドフィルム積層体。
- 請求項11記載のポリイミドフィルムと、少なくとも1層の導電層を有すること特徴とする請求項12または13に記載のポリイミドフィルム積層体。
- 請求項1〜7のいずれかに記載のポリイミド前駆体組成物から得られるポリイミド組成物、又は請求項8〜9のいずれかに記載のポリイミド組成物を含むことを特徴とするディスプレイ用、タッチパネル用、または太陽電池用のフィルム。
- 請求項1〜7のいずれかに記載のポリイミド前駆体組成物から得られるポリイミド組成物、又は請求項8〜9のいずれかに記載のポリイミド組成物を含むことを特徴とする表示デバイス、センサーデバイス、光電変換デバイス、または光学デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015119719 | 2015-06-12 | ||
JP2015119719 | 2015-06-12 | ||
PCT/JP2016/067453 WO2016199926A1 (ja) | 2015-06-12 | 2016-06-10 | ポリイミド前駆体組成物、及びポリイミド組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016199926A1 true JPWO2016199926A1 (ja) | 2018-04-05 |
JP6919564B2 JP6919564B2 (ja) | 2021-08-18 |
Family
ID=57503249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017523736A Active JP6919564B2 (ja) | 2015-06-12 | 2016-06-10 | ポリイミド前駆体組成物、及びポリイミド組成物 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180171077A1 (ja) |
JP (1) | JP6919564B2 (ja) |
KR (1) | KR20180018667A (ja) |
CN (1) | CN107849352B (ja) |
TW (1) | TWI772260B (ja) |
WO (1) | WO2016199926A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6672667B2 (ja) * | 2015-09-24 | 2020-03-25 | 富士ゼロックス株式会社 | ポリイミド前駆体組成物、ポリイミド前駆体組成物の製造方法、及びポリイミド成形体の製造方法。 |
US20190092913A1 (en) * | 2016-03-03 | 2019-03-28 | Dai Nippon Printing Co., Ltd. | Polyimide film, method for producing polyimide film, and polyimide precursor resin composition |
TWI609897B (zh) * | 2017-02-15 | 2018-01-01 | 律勝科技股份有限公司 | 聚醯亞胺樹脂及其製造方法與薄膜 |
JP6926566B2 (ja) * | 2017-03-23 | 2021-08-25 | 宇部興産株式会社 | ポリイミドフィルムとハードコート層とを含む積層体 |
JP7088173B2 (ja) * | 2017-04-10 | 2022-06-21 | 大日本印刷株式会社 | フレキシブルディスプレイ用表面材 |
JP2019027623A (ja) * | 2017-07-26 | 2019-02-21 | 株式会社Screenホールディングス | 加熱装置および加熱方法 |
JP7196384B2 (ja) * | 2017-09-06 | 2022-12-27 | 大日本印刷株式会社 | ポリイミドフィルム、光学フィルムおよび画像表示装置 |
KR102264420B1 (ko) | 2017-11-03 | 2021-06-11 | 주식회사 엘지화학 | 디스플레이 기판용 폴리이미드 필름 |
JP7371621B2 (ja) * | 2018-04-10 | 2023-10-31 | 三菱瓦斯化学株式会社 | ポリイミド樹脂、ポリイミドワニス及びポリイミドフィルム |
KR102147342B1 (ko) * | 2019-09-30 | 2020-08-24 | 에스케이이노베이션 주식회사 | 폴리이미드계 필름 및 이를 이용한 윈도우 커버 필름 |
WO2022133722A1 (zh) * | 2020-12-22 | 2022-06-30 | 宁波长阳科技股份有限公司 | 聚酰亚胺材料及其制备方法和应用 |
CN114213790A (zh) * | 2021-12-31 | 2022-03-22 | 南京清研新材料研究院有限公司 | 一种光配向聚酰亚胺组合物及其制备工艺 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000080271A (ja) * | 1998-09-04 | 2000-03-21 | Unitika Ltd | 誘電体ペースト及びそれから得られる誘電体膜 |
JP2003315541A (ja) * | 2002-04-23 | 2003-11-06 | Nitto Denko Corp | 複屈折性フィルムの製造方法、光学補償偏光板及び表示装置 |
JP2004035347A (ja) * | 2002-07-04 | 2004-02-05 | Japan Science & Technology Corp | 炭酸ストロンチウムの製造方法、非複屈折性光学樹脂材料並びに光学素子 |
JP2005156863A (ja) * | 2003-11-25 | 2005-06-16 | Tosoh Corp | ディスプレイ用光学フィルム |
JP2007140011A (ja) * | 2005-11-17 | 2007-06-07 | Tosoh Corp | 光学フィルムの製造方法 |
JP2008101176A (ja) * | 2005-11-10 | 2008-05-01 | Fujifilm Corp | 組成物及び該組成物からなるフィルム、偏光板保護フィルム、光学補償フィルムならびに液晶表示装置 |
JP2008274043A (ja) * | 2007-04-26 | 2008-11-13 | Asahi Kasei Corp | 膜及びその製造方法 |
JP2008280404A (ja) * | 2007-05-09 | 2008-11-20 | Fujifilm Corp | 組成物、フィルム、及びレターデーション制御剤 |
JP2008280403A (ja) * | 2007-05-09 | 2008-11-20 | Fujifilm Corp | 組成物及び該組成物からなるフィルム、偏光板保護フィルム、光学補償フィルムならびに液晶表示装置 |
WO2011129311A1 (ja) * | 2010-04-12 | 2011-10-20 | 日東電工株式会社 | 粒子、粒子分散液、粒子分散樹脂組成物、その製造方法、樹脂成形体、その製造方法、触媒粒子、触媒液、触媒組成物、触媒成形体、チタン錯体、酸化チタン粒子およびその製造方法 |
JP2013182053A (ja) * | 2012-02-29 | 2013-09-12 | Tosoh Corp | 位相差フィルムの製造方法 |
WO2015080158A1 (ja) * | 2013-11-27 | 2015-06-04 | 宇部興産株式会社 | ポリイミド前駆体組成物、ポリイミドの製造方法、ポリイミド、ポリイミドフィルム、及び基板 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1180350A (ja) * | 1997-09-12 | 1999-03-26 | Hitachi Chem Co Ltd | 光部品用ポリイミド及びこれを用いた光部品 |
JP2008003358A (ja) * | 2006-06-23 | 2008-01-10 | Konica Minolta Holdings Inc | 光学フィルムの製造方法、光学フィルム及び光学素子 |
TWI491649B (zh) * | 2007-04-13 | 2015-07-11 | Ube Industries | Polyimide film with smoothness |
TWI435902B (zh) * | 2007-08-20 | 2014-05-01 | Kolon Inc | 聚亞醯胺膜 |
EP2218754B1 (en) * | 2007-11-30 | 2018-06-20 | Mitsui Chemicals, Inc. | Polyimide composite material and film of the same |
JP5612953B2 (ja) * | 2010-04-12 | 2014-10-22 | 日東電工株式会社 | 粒子、粒子分散液、粒子分散樹脂組成物および樹脂成形体 |
JP6158020B2 (ja) * | 2012-09-28 | 2017-07-05 | 宇部マテリアルズ株式会社 | 針状炭酸ストロンチウム微粉末 |
-
2016
- 2016-06-10 US US15/735,287 patent/US20180171077A1/en not_active Abandoned
- 2016-06-10 WO PCT/JP2016/067453 patent/WO2016199926A1/ja active Application Filing
- 2016-06-10 JP JP2017523736A patent/JP6919564B2/ja active Active
- 2016-06-10 CN CN201680044684.2A patent/CN107849352B/zh active Active
- 2016-06-10 KR KR1020187000676A patent/KR20180018667A/ko not_active IP Right Cessation
- 2016-06-13 TW TW105118340A patent/TWI772260B/zh active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000080271A (ja) * | 1998-09-04 | 2000-03-21 | Unitika Ltd | 誘電体ペースト及びそれから得られる誘電体膜 |
JP2003315541A (ja) * | 2002-04-23 | 2003-11-06 | Nitto Denko Corp | 複屈折性フィルムの製造方法、光学補償偏光板及び表示装置 |
JP2004035347A (ja) * | 2002-07-04 | 2004-02-05 | Japan Science & Technology Corp | 炭酸ストロンチウムの製造方法、非複屈折性光学樹脂材料並びに光学素子 |
JP2005156863A (ja) * | 2003-11-25 | 2005-06-16 | Tosoh Corp | ディスプレイ用光学フィルム |
JP2008101176A (ja) * | 2005-11-10 | 2008-05-01 | Fujifilm Corp | 組成物及び該組成物からなるフィルム、偏光板保護フィルム、光学補償フィルムならびに液晶表示装置 |
JP2007140011A (ja) * | 2005-11-17 | 2007-06-07 | Tosoh Corp | 光学フィルムの製造方法 |
JP2008274043A (ja) * | 2007-04-26 | 2008-11-13 | Asahi Kasei Corp | 膜及びその製造方法 |
JP2008280404A (ja) * | 2007-05-09 | 2008-11-20 | Fujifilm Corp | 組成物、フィルム、及びレターデーション制御剤 |
JP2008280403A (ja) * | 2007-05-09 | 2008-11-20 | Fujifilm Corp | 組成物及び該組成物からなるフィルム、偏光板保護フィルム、光学補償フィルムならびに液晶表示装置 |
WO2011129311A1 (ja) * | 2010-04-12 | 2011-10-20 | 日東電工株式会社 | 粒子、粒子分散液、粒子分散樹脂組成物、その製造方法、樹脂成形体、その製造方法、触媒粒子、触媒液、触媒組成物、触媒成形体、チタン錯体、酸化チタン粒子およびその製造方法 |
JP2013182053A (ja) * | 2012-02-29 | 2013-09-12 | Tosoh Corp | 位相差フィルムの製造方法 |
WO2015080158A1 (ja) * | 2013-11-27 | 2015-06-04 | 宇部興産株式会社 | ポリイミド前駆体組成物、ポリイミドの製造方法、ポリイミド、ポリイミドフィルム、及び基板 |
Also Published As
Publication number | Publication date |
---|---|
CN107849352B (zh) | 2021-05-28 |
US20180171077A1 (en) | 2018-06-21 |
TWI772260B (zh) | 2022-08-01 |
KR20180018667A (ko) | 2018-02-21 |
JP6919564B2 (ja) | 2021-08-18 |
TW201710321A (zh) | 2017-03-16 |
WO2016199926A1 (ja) | 2016-12-15 |
CN107849352A (zh) | 2018-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6919564B2 (ja) | ポリイミド前駆体組成物、及びポリイミド組成物 | |
JP6531812B2 (ja) | ポリイミド前駆体及びポリイミド | |
KR102073449B1 (ko) | 폴리이미드 전구체, 폴리이미드, 폴리이미드 필름, 바니시, 및 기판 | |
JP6485358B2 (ja) | ポリイミド前駆体組成物、ポリイミドの製造方法、ポリイミド、ポリイミドフィルム、及び基板 | |
JP6283954B2 (ja) | ポリイミド前駆体、ポリイミド、ワニス、ポリイミドフィルム、及び基板 | |
JP6607193B2 (ja) | ポリイミド前駆体、ポリイミド、及びポリイミドフィルム | |
JPWO2017115818A1 (ja) | ポリイミド材料、その製造方法およびその製造に用いられるポリイミド前駆体組成物 | |
KR20170072929A (ko) | 폴리이미드 필름, 폴리이미드 전구체 및 폴리이미드 | |
US10174166B2 (en) | Polyimide precursor, polyimide, varnish, polyimide film, and substrate | |
JP7047852B2 (ja) | ポリイミド前駆体、ポリイミド、ポリイミドフィルム、ワニス、及び基板 | |
JPWO2015053312A1 (ja) | ポリイミド前駆体、ポリイミド、ポリイミドフィルム、ワニス、及び基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20180525 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190409 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200121 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200323 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200804 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201002 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210224 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210423 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210622 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210705 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6919564 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |