JPWO2016152938A1 - めっき品の製造方法 - Google Patents
めっき品の製造方法 Download PDFInfo
- Publication number
- JPWO2016152938A1 JPWO2016152938A1 JP2017508399A JP2017508399A JPWO2016152938A1 JP WO2016152938 A1 JPWO2016152938 A1 JP WO2016152938A1 JP 2017508399 A JP2017508399 A JP 2017508399A JP 2017508399 A JP2017508399 A JP 2017508399A JP WO2016152938 A1 JPWO2016152938 A1 JP WO2016152938A1
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- Prior art keywords
- catalyst
- glass substrate
- compound
- plating
- glass
- Prior art date
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- Granted
Links
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Abstract
Description
[レーザー照射]
(ガラス基材)
ガラス基材として縦76mm×横26mm×厚さ1.1mmのソーダライムガラス(「松波スライドグラス S7213」)を準備した。
コヒレント・ジャパン株式会社製のパルス発振全固体レーザー「Talisker HE」を用いた。
波長:355nm
平均出力:2W
加工点での平均出力:0.8W
パルス幅:20ピコ秒
周波数:50kHz
(前処理)
レーザー加工されたガラス基材を、50℃に保温した水酸化カリウム水溶液(濃度:50g/L)に5分間浸した。その後、ガラス基材をイオン交換水で洗浄した。次いで、ガラス基材を、50℃に保温したコンディショニング液(濃度:50mL/L、上村工業株式会社製「スルカップ THRU−CUP MTE−1−A」)に5分間浸した。その後、ガラス基材をイオン交換水で洗浄した。
前処理されたガラス基材を、室温のパラジウム触媒液(濃度:50mL/L、上村工業株式会社製「アクチベーター A−10X」)に1分間浸した。その後、ガラス基材をイオン交換水で3回洗浄した。
パラジウム触媒を付着させたガラス基材を、50℃に保温した次亜リン酸ナトリウム水溶液(濃度:0.27M)に30秒間浸漬し、パラジウム触媒を活性化させた。その後、ガラス基材をイオン交換水で洗浄した。
活性化処理されたガラス基材を、50℃に保温したチオ尿素水溶液(濃度:0.1ppm)に1分間浸して、パルスレーザーが照射されていない箇所に付着したパラジウム触媒を選択的に失活させた。その後、ガラス基材をイオン交換水で3回洗浄した。
ガラス基材を、75℃に保温したpH4.4の無電解Niめっき液に35分間浸漬して、無電解Niめっき処理をして、ガラス基材の表面に膜厚5μmの無電解Niめっき層を形成した。その後、基材をイオン交換水で3回洗浄した。無電解Niめっき液の組成は下記の通りである。
・日本エレクトロプレイティング・エンジニヤース株式会社(EEJA)製「ELN240 M2」:150mL/L
・日本エレクトロプレイティング・エンジニヤース株式会社(EEJA)製「ELN240 M1」:50mL/L
・日本エレクトロプレイティング・エンジニヤース株式会社(EEJA)製「ELN240 R3」:6mL/L
Niめっき層が形成されたガラス基材を、55℃に保温した金めっき液(EEJA製「PRECIOUSFAB IGS8000SPF」)に10分間浸漬して、Niめっき層の上に、厚さ0.05μmの置換Auめっき層を形成してめっき品を得た。
(表面観察)
得られためっき品の表面をマイクロスコープで観察した。得られた画像を図2に示す。図2の1はガラス基材であり、2は置換金めっき皮膜である。図2に示されるように、「触媒失活処理」を行うことにより、パルスレーザーを照射した領域にのみ選択的にめっき皮膜が形成された。
密着性試験はJIS H8504に記載されているはんだ付け試験方法に従い行った。このときのL形金具は板厚0.5mmの無酸素銅板であった。そして、はんだ付け部の面積が5mm×5mになるように、指定された形状にプレス成型した後、下地として膜厚3μmのニッケルめっきを施し、膜厚0.05μm金めっきを施した。一方、めっき品の表面にはんだを塗布(φ8mm×t0.2mm)した後、300℃で1分間加熱した。そして、L形金具とめっき品とをはんだ付けをして試験片を得た。得られた試験片をインストロン社製引張試験機「3382床置き型試験システム」に取り付けて、密着性試験を行った。はんだは、Tarutin Kester社製の鉛フリーはんだペースト「TSC-254-5042SF 12-1」を用いた。図3に引張試験後の画像を示す。図3に示すように、めっき皮膜はガラスとともに剥がれた。
「無電解めっき触媒付着処理」において、パラジウム触媒液に浸漬させる時間を2分に変更し、「触媒失活処理」の代わりに「触媒除去処理」を行った。「触媒除去処理」では、室温のグリシン水溶液(濃度:0.05M)に活性化処理されたガラス基材を30秒間浸漬させた以外は実施例1と同様にしてめっき品を得て、その表面をマイクロスコープで観察した。得られた画像を図4に示す。図4の1はガラス基材であり、2は置換Auめっき皮膜である。図4に示されるように、「触媒除去処理」を行うことにより、パルスレーザーを照射した領域にのみ選択的にめっき皮膜が形成された。そして、実施例1と同様にして密着性試験を行った。その結果、めっき皮膜はガラスとともに剥がれた。
ガラス基材を、76mm×26mm×1.1mmのホウケイ酸ガラス(「松波スライドグラス S1127」)に変えた以外は実施例1と同様にしてめっき品を得た。そして、実施例1と同様にして密着性試験を行った。その結果、めっき皮膜はガラスとともに剥がれた。
ガラス基材を縦70mm×横30mm×厚さ0.55mmの強化ガラス(AGC旭硝子製「Dragontrail(ドラゴントレイル)」)に変え、パルスレーザーの照射において、加工点での平均出力を1.1W、y方向への移動距離を6μm、走査速度を300mm/秒に変えた以外は実施例1と同様にガラス基材にパルスレーザーを照射した。「Dragontrail」は化学強化されたガラスであり、ガラス表面のNa+をK+に交換したものである。
パルスレーザーの照射において、加工点での平均出力を1.1W、y方向への移動距離を10μm、走査速度を50mm/秒に変えた以外は実施例4と同様にしてガラス基材にパルスレーザーを照射した。そして、実施例4と同様にしてパルスレーザーが照射された箇所の算術平均粗さ(Ra)を測定した。その結果、Raは2.81μmであった。
「触媒失活処理」及び「置換Auめっき処理」を行わなかった以外は実施例1と同様にしてめっき品を得て、その表面をマイクロスコープで観察した。得られた画像を図5に示す。図5の31はパルスレーザーを照射した箇所に形成されたNiめっき皮膜であり、32はガラス基材表面のパルスレーザーを照射していない箇所に形成されたNiめっき皮膜である。図5に示されるように、「触媒失活処理」又は「触媒除去処理」のいずれかを行わなければガラス基材の全面にめっき皮膜が形成された。また、パルスレーザーを照射していない箇所に形成されたNiめっき皮膜は、セロハンテープで容易に剥がれた。
パルスレーザーの照射において、加工点での平均出力を1W、y方向への移動距離を10μm、走査速度を300mm/秒に変えた以外は実施例4と同様にしてガラス基材にパルスレーザーを照射した。そして、実施例4と同様にしてレーザーが照射された箇所の算術平均粗さ(Ra)を測定した。その結果、Raは0.03μmであった。
2 置換Auめっき皮膜
31 パルスレーザーを照射した箇所に形成されたNiめっき皮膜
32 ガラス基材表面のパルスレーザーを照射していない箇所に形成されたNiめっき皮膜
Claims (8)
- ガラス基材の表面にめっき皮膜パターンが形成されためっき品の製造方法であって;
前記ガラス基材の表面の一部の領域にパルスレーザーを照射する第1工程と、
前記ガラス基材の表面に無電解めっき触媒を付着させる第2工程と、
前記ガラス基材において、前記パルスレーザーが照射されていない箇所に付着した前記触媒を選択的に失活させるか、又は前記触媒を選択的に除去する第3工程と、
第3工程の後に無電解めっきを行い、前記パルスレーザーを照射した領域にのみ選択的にめっき皮膜を形成する第4工程とを備えることを特徴とするめっき品の製造方法。 - 前記パルスレーザーのパルス幅が1×10−18〜1×10−4秒である請求項1に記載の製造方法。
- 前記めっき皮膜が、ニッケル、銅、銀、金、パラジウム、白金、ロジウム、ルテニウム、スズ、鉄、コバルト及びこれらの合金からなる群から選択される少なくとも1種である請求項1又は2に記載の製造方法。
- 第3工程において、前記触媒を失活させる化合物又は前記触媒を除去する化合物を含有する液にガラス基材を接触させる請求項1〜3のいずれかに記載の製造方法。
- 第3工程において、前記触媒を失活させる化合物が硫黄化合物である請求項1〜4のいずれかに記載の製造方法。
- 前記硫黄化合物が、チオカルボニル基、チオール基、スルフィド基からなる群から選択される少なくとも1種の官能基を有する化合物である請求項5に記載の製造方法。
- 第3工程において、前記触媒を除去する化合物がキレート化合物又はシアン化物である請求項1〜4のいずれかに記載の製造方法。
- 前記触媒を除去する化合物が、アミノ酸、アミノアルコール、ポリアミン、ポリカルボン酸、ポリケトンからなる群から選択される少なくとも1種のキレート化合物である請求項7に記載の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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JP2015061779 | 2015-03-24 | ||
JP2015061779 | 2015-03-24 | ||
PCT/JP2016/059264 WO2016152938A1 (ja) | 2015-03-24 | 2016-03-23 | めっき品の製造方法 |
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JPWO2016152938A1 true JPWO2016152938A1 (ja) | 2017-10-12 |
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JP6458285B2 (ja) * | 2015-03-24 | 2019-01-30 | オーエム産業株式会社 | デバイスの製造方法 |
JP2019026879A (ja) * | 2017-07-27 | 2019-02-21 | 株式会社クオルテック | 電子部品の製造方法及び電子部品 |
WO2019102701A1 (ja) * | 2017-11-21 | 2019-05-31 | 株式会社クオルテック | 電子部品の製造方法及び電子部品 |
CN110306213B (zh) * | 2019-07-08 | 2020-08-04 | 广州三孚新材料科技股份有限公司 | 一种太阳能电池用镀锡液及其制备方法 |
JP6745560B1 (ja) * | 2020-03-25 | 2020-08-26 | 株式会社イオックス | パターン形状の無電解めっき層を有するめっき物 |
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EP0501095A1 (fr) * | 1991-03-01 | 1992-09-02 | Lucien Diégo Laude | Procédé de métallisation de surfaces diélectriques contenant un métal |
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- 2016-03-23 EP EP16768841.5A patent/EP3276042B1/en active Active
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JPH0681153A (ja) * | 1992-03-10 | 1994-03-22 | Internatl Business Mach Corp <Ibm> | レーザによる金属の析出方法 |
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JP2003013242A (ja) * | 2001-07-05 | 2003-01-15 | Japan Science & Technology Corp | 光固定された微粒子を触媒とする無電解メッキ法 |
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JP2011017069A (ja) * | 2009-07-10 | 2011-01-27 | Sankyo Kasei Co Ltd | 成形回路部品の製造方法 |
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WO2016152938A1 (ja) | 2016-09-29 |
EP3276042A1 (en) | 2018-01-31 |
EP3276042A4 (en) | 2018-11-07 |
CN106460177A (zh) | 2017-02-22 |
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JP6264596B2 (ja) | 2018-01-24 |
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