JP7171059B2 - 電子部品の製造方法 - Google Patents
電子部品の製造方法 Download PDFInfo
- Publication number
- JP7171059B2 JP7171059B2 JP2019556114A JP2019556114A JP7171059B2 JP 7171059 B2 JP7171059 B2 JP 7171059B2 JP 2019556114 A JP2019556114 A JP 2019556114A JP 2019556114 A JP2019556114 A JP 2019556114A JP 7171059 B2 JP7171059 B2 JP 7171059B2
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- JP
- Japan
- Prior art keywords
- plated
- electronic component
- plating
- manufacturing
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 52
- 238000007747 plating Methods 0.000 claims description 110
- 239000010949 copper Substances 0.000 claims description 103
- 239000000463 material Substances 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 22
- 239000004925 Acrylic resin Substances 0.000 claims description 21
- 229920000178 Acrylic resin Polymers 0.000 claims description 21
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 19
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 19
- 239000003054 catalyst Substances 0.000 claims description 18
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 18
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 18
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 15
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 15
- 239000003822 epoxy resin Substances 0.000 claims description 15
- 229920000647 polyepoxide Polymers 0.000 claims description 15
- 229910002855 Sn-Pd Inorganic materials 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 239000009719 polyimide resin Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 239000012670 alkaline solution Substances 0.000 claims description 4
- 229920000058 polyacrylate Polymers 0.000 claims description 4
- 239000002585 base Substances 0.000 description 51
- 239000000243 solution Substances 0.000 description 24
- 238000012360 testing method Methods 0.000 description 17
- 239000000126 substance Substances 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000003638 chemical reducing agent Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- 239000002738 chelating agent Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 3
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005237 degreasing agent Methods 0.000 description 2
- 239000013527 degreasing agent Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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- C23C18/1605—Process or apparatus coating on selected surface areas by masking
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C18/1689—After-treatment
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
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- C25D5/56—Electroplating of non-metallic surfaces of plastics
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Description
(実施形態の概要)
実施形態の電子部品の製造方法は、パルス幅の単位がピコ秒であるピコ秒レーザ光、又はフェムト秒であるフェムト秒レーザ光を被めっき層の表面に照射して該表面を粗化し、粗化した該表面上にめっき部を形成する。
上記のように、ピコ秒レーザ光又はフェムト秒レーザ光により、表面を粗化した上でめっきを行う。ピコ秒レーザ光又はフェムト秒レーザ光は、パルス幅がピコ秒オーダー又はフェムト秒オーダーであり、非常に短く、熱拡散する前に融点を超える温度に被めっき層が加熱され、蒸発が起こる。レーザ光が照射された部分はアブレーションが生じて除去される。熱影響の少ない加工ができ、被めっき層の表面に微細で鋭い多角錐形状の凹凸が形成される。従って、アンカー効果により、めっき部の被めっき層への密着性が良好である。被めっき層が、めっき部との間で化学結合が得られにくい、又は表面に凹凸が得られにくい難めっき材料からなる場合であっても、良好な密着性が得られる。
上記構成によれば、熱影響の少ない加工ができ、被めっき層の表面に微細で鋭い多角錐形状の凹凸が形成される。アンカー効果により、めっき部の被めっき層への密着性が良好である。被めっき層が、めっき部との間で化学結合が得られにくい、又は表面に凹凸が得られにくい難めっき材料からなる場合であっても、良好な密着性が得られる。
そして、非配線パターン部分がマスクにより保護された状態で、配線パターンが形成される。配線のパターニングの精度が良好である。工程数が多く、煩雑であるフォトリソグラフィの手法を用いて配線を設ける場合と比較して、少ない工程数で、容易に配線を設けることができる。
上記構成によれば、表面を粗化するときにマスクを除去することができ、非配線パターン部分がマスクにより保護された状態で、配線パターンが容易に形成される。
上記構成によれば、粗化部分のみに触媒を残存させて銅めっきを行うので、一度に所望の厚みの銅めっき部を形成することができる。
上記構成によれば、被めっき層の全面に第1銅めっき部を形成しているので、給電パターンを設けることなく、電解銅めっきを行って、第2銅めっき部を形成することができる。
電解銅めっきによりめっき部の厚みを厚くすることができ、被めっき層の表面からめっき部を平面視で長方形状又は台形状に突出させることができる。無電解Cuめっきは、自己触媒めっきであるのが好ましい。
上記構成によれば、表面粗化に用いるピコ秒レーザ光、又は前記フェムト秒レーザ光を用いて、効率良く、マスクを開口することができる。
銅めっきの場合、酸性又は中性の溶液を用いる複数の工程を有するが、上記構成によれば、これらの工程でマスクが反応により減じることがなく、アルカリ溶液を用いるマスクの除去工程においてのみ、マスクが除去される。
フェムト秒グリーンレーザは、第二高調波であるため、比較的高出力を取り出すことができ、被めっき層が合成樹脂製等であっても、被めっき層への吸収が良好である。
フェムト秒グリーンレーザが出射する光の波長は500nm~530nmであるのが好ましい。パルス幅は、1フェムト秒~1000フェムト秒であるのが好ましい。
また、ピコ秒レーザを用いる場合、ピコ秒レーザが出射する光の波長は500nm~530nmであるのが好ましい。パルス幅は、1ピコ秒~10ピコ秒であるのが好ましい。
本実施の形態の電子部品の製造方法によれば、アクリル樹脂、PET、PTFE、スライドガラス等のガラス、エポキシ樹脂、液晶ポリマー、及びポリイミド樹脂等の難めっき性材料の被めっき層にも密着性良好にめっき部を設けることができる。
上記構成によれば、電子部品のめっき部の被めっき層への密着性が良好である。
ピール強度は、アクリル樹脂の場合、0.2N/mm以上、0.3N/mm以上の順により好ましい。PETの場合、0.2N/mm以上であるのがより好ましい。スライドガラスの場合、0.3N/mm以上であるのがより好ましい。PTFE、エポキシ樹脂、及び液晶ポリマーの場合、0.7N/mm以上、0.8N/mm以上の順により好ましい。
上記構成によれば、めっき部の被めっき層に対する密着性が良好である。算術平均粗さRaは、0.3μm以上、0.4μm以上、0.5μm以上の順により好ましい。
上記構成によれば、電子部品の銅めっき部の被めっき層への密着性が良好である。
ピール強度は、アクリル樹脂の場合、0.2N/mm以上、0.3N/mm以上の順により好ましい。PETの場合、0.2N/mm以上であるのがより好ましい。スライドガラスの場合、0.3N/mm以上であるのがより好ましい。PTFE、エポキシ樹脂、及び液晶ポリマーの場合、0.7N/mm以上、0.8N/mm以上の順により好ましい。
上記構成によれば、銅めっき部の被めっき層に対する密着性が良好である。算術平均粗さRaは、0.3μm以上、0.4μm以上、0.5μm以上の順により好ましい。
(実施の形態1)
図1は、実施の形態1に係る電子部品1の配線部分を示す模式的断面図である。
電子部品1は、表面に複数の凹部20が設けられた基層2を有する。各凹部20の表面には、Cuからなる配線部5が設けられている。配線部5は、凹部20の底面及び側面に設けられた第1Cuめっき部3と、第1Cuめっき部3の表面に、凹部20を充填するように設けられた第2Cuめっき部4とを有する。第1Cuめっき部3と第2Cuめっき部4とは一体化されている。
図2はめっき処理を示すフローチャート、図3A~Eは電子部品の製造を説明するための模式的断面図である。
基層2は、アクリル樹脂、PET、PTFE、スライドガラス等のガラス、エポキシ樹脂、液晶ポリマー、又はポリイミド樹脂等の材料からなる(図3A)。
まず、基層2の表面を粗化する(S1、図3B)。フェムト秒レーザ光又はピコ秒レーザ光を照射し、基層2の表面の、配線パターンに対応する部分を除去して角溝状の凹部20を形成し、かつ凹部20の底面及び側面を粗化する。
<電解Cuめっき液組成>
硫酸銅・五水和物:100g/L
硫酸:190g/L
塩素:50mg/L
光沢剤:適量
<電解Cuめっき条件>
液温:室温
電流密度:2A/dm2
最後に、例えば80~200℃で、30分間~1時間ベーキングを行う(S5)。なお、基層2がPETからなる場合、ベーキングを省略することができる。
凹部20上に第1Cuめっき部3が形成される(図4C)。アンカー効果により、密着性が顕著に向上する。
図5A~Cに示すように、基層2-Cuめっき層33間の化学結合に乏しく、また、基層2の表面に凹凸がないので密着性が悪く、Cuめっき層33は容易に剥離する。
図6は、実施の形態2に係る電子部品11の配線部分を示す模式的断面図である。
電子部品11は、表面に複数の凹部21が設けられた基層2を有する。各凹部21の表面には、Cuからなる配線部12が設けられている。
図7はめっき処理を示すフローチャート、図8A~Fは電子部品11の製造方法を説明するための模式的断面図である。
基層2は、アクリル樹脂、PET、PTFE、スライドガラス等のガラス、エポキシ樹脂、液晶ポリマー、又はポリイミド樹脂等の材料からなる(図8A)。
まず、基層2の表面にマスク13を塗布する(S11、図8B)。)マスクとしては、アルカリ可溶タイプのアクリルポリマーを含むのが好ましい。
塩酸系水溶液を用いてプリディップ処理を行う(S14)。保持時間は、例えば2分である。
活性化を行う(S16)。Sn-Pd触媒14を付与した基層2を塩酸系の溶液に浸漬することでSnの層が除去され、内部のPd触媒が露出する。Pd触媒が露出するので、Sn-Pd触媒14が存在する部分において、後述する無電解Cuめっき液による反応が生じる。
そして、基層2の表面に無電解Cuめっきを行い、配線部12が形成される(S18、図8F)。無電解Cuめっき液としては、上述の強アルカリ領域でホルマリンを還元剤とする還元析出型の無電解Cuめっき液を用いることができる。キレート剤としては、EDTA又はロッシェル塩を用いることができる。無電解Cuめっき液中の還元剤が基層2上で電子を放出するように触媒として機能するPdが付与されている。従って、無電解Cuめっき液中のCuイオンが、還元剤の酸化反応で放出される電子によって還元され、基層2の表面に析出し、配線部12が形成される。
図9は、実施の形態3に係る電子部品15の配線部分を示す模式的断面図である。
電子部品15は、表面に複数の凹部22が設けられた基層2を有する。各凹部22の表面には、Cuからなる配線部16が設けられている。配線部16は、凹部22の底面及び側面に設けられた第1Cuめっき部17と、第1Cuめっき部17の表面に、凹部22を充填するように設けられた第2Cuめっき部18とを有する。第2Cuめっき部18は基層2の表面から側面視で長方形状又は台形状に突出している。第1Cuめっき部17と第2Cuめっき部18とは一体化されている。
図10はめっき処理を示すフローチャート、図11A~Hは電子部品15の製造方法を説明するための模式的断面図である。
基層2は、アクリル樹脂、PET、PTFE、スライドガラス等のガラス、エポキシ樹脂、液晶ポリマー、又はポリイミド樹脂等の材料からなる(図11A)。
塩酸系水溶液を用いてプリディップ処理を行う(S23)。保持時間は、例えば2分である。
Sn-Pd触媒を基層2の表面に付与する(S24)。Sn-Pd触媒はコロイド状の粒子であり、Pd-Snの核部の表面にSn-rich層、及びSn2+層が順に形成されている。
活性化を行う(S25)。Sn-Pd触媒14を付与した基層2を塩酸系の溶液に浸漬することでSnの層が除去され、内部のPd触媒が露出する。
表面を乾燥させる(S28)。乾燥は、例えば温度20℃~80℃で行う。
露出しためっき膜30をエッチングにより除去する(S32、図11H)。エッチング液はCuを溶かすことができる液を用いる。めっき膜30の厚みは0.1μm~1μm程度であり、第2Cuめっき部18の表面からの突出量は例えば十数μmであり、オーダーが異なる。エッチングによりめっき膜30は除去されるが、第2Cuめっき部18の厚みが減少しないような時間、電子部品15をエッチング液に浸漬する。
以上より、第1Cuめっき部17と第2Cuめっき部18とを有する配線部16が形成される。
実施の形態1においては、図3Dに示すように、配線パターンが電気的に接続されていないので、電解Cuめっきを行うために、給電パターンを要する。
本実施形態においては、上述したように全面にめっき膜30が形成されているので、給電パターンを設けることなく、電解Cuめっきを行って第2Cuめっき部18を形成することができる。配線パターンを接続するための給電パターンが不要であるので、工程数を減らすことができる。
アクリル樹脂、PET、PTFE、スライドガラス、エポキシ樹脂、又は液晶ポリマーからなる基材上に、上述のようにして、フェムト秒グリーンレーザを用いて実施の形態1の製造方法によりCu箔を設け、ピール(銅箔引き剥がし)試験を行ってピール強度を求めた。
試験条件は以下の通りである。
・試験装置 引張圧縮試験機(株式会社島津製作所製「EZ TEST」)
・引き剥がし速度 50mm/min
・引き剥がし方向 90°
・引き剥がし長さ 30mm
・銅箔寸法 幅5mm×長さ90mm
・引き剥がし速度 54mm/min
その結果を下記の表1及び図12に示す。図12の横軸のaはアクリル樹脂、bはPET、cはPTFE、dはスライドガラス、eはエポキシ樹脂、fは液晶ポリマーである。図12の縦軸は、ピール強度(N/mm)である。
図13及び図14より、アクリル樹脂の基材の表面が粗化されていることが分かる。
いずれの場合も、基材とCuめっき層との間に微細な凹凸があり、アンカー効果により強固に接合されていることが分かる。
表6より、最大高さ粗さRz(μm)は2μm以上である場合、Cuめっき部の密着性が良好であることが分かる。最大高さ粗さRz(μm)は、3μm以上、4μm以上、5μm以上の順により好ましい。
本実施の形態の製造方法により得られた電子部品のピール強度は、0.1N/mm以上である。
例えば電子部品はプリント配線板に限定されない。めっきも配線部分に行う場合に限定されない。めっきの種類もCuめっきに限定されず、Niめっき等を行うことができる。
フェムト秒レーザの照射条件も実施の形態において説明した場合に限定されない。
2 基層
20、21、22 凹部
3、17 第1Cuめっき部
30 めっき膜
4、18 第2Cuめっき部
5、12、16 配線部
13 マスク
14 Sn-Pd触媒
Claims (6)
- 基材に配線が形成された電子部品の製造方法であって、
パルス幅の単位がピコ秒であるピコ秒レーザ光、又はフェムト秒であるフェムト秒レーザ光を前記基材表面に照射して配線パターンを形成する第1の工程と、
Sn-Pd触媒を前記基材の表面に付与した後、前記基材の表面に第1の銅めっき層を形成する第2の工程と、
前記第1の銅めっき層上にマスクを形成する第3の工程と、
レーザ光を前記配線パターンに対応する前記マスクの表面に照射し、前記マスクを開口させる第4の工程と、
第2の銅めっき層を、前記配線パターン部の前記第1の銅めっき層に形成する第5の工程と、
前記マスクを剥離する第6の工程と、
前記マスクの剥離により露出した前記第1の銅めっき層を、除去する第7の工程を行うことを特徴とする電子部品の製造方法。 - 前記基材は、アクリル樹脂、PET、PTFE、ガラス、エポキシ樹脂、液晶ポリマー、及びポリイミド樹脂からなる群から選択される材料を含むことを特徴とする請求項1記載の電子部品の製造方法。
- 前記第1の銅めっき層は、無電解銅めっき層であり、
前記第2の銅めっき層は、電解銅めっき層であることを特徴とする請求項1記載の電子部品の製造方法。 - 前記フェムト秒レーザ光のパルス幅は、1フェムト秒~1000フェムト秒であり、
前記ピコ秒レーザ光のパルス幅は、1ピコ秒~10ピコ秒であることを特徴とする請求項1記載の電子部品の製造方法。 - 前記第1の工程において、前記レーザ光の照射により前記基材の表面を粗化し、
粗化された前記基材の表面の算術平均粗さRaが0.2μm以上であることを特徴とする請求項1記載の電子部品の製造方法。 - 前記マスクは、アルカリ溶液で可溶するアクリルポリマーを含み、
前記マスクは、染料を含んでいることを特徴とする請求項1記載の電子部品の製造方法。
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