JPWO2016017076A1 - 半導体実装品とその製造方法 - Google Patents
半導体実装品とその製造方法 Download PDFInfo
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Abstract
Description
図1Aは本発明の実施の形態1による半導体部品110の断面図である。図1Bは図1Aに示す半導体部品110の斜視図である。
以下のように、サンプルE1〜サンプルE4に係る半導体実装品を作製し、半田接合強度を評価をしている。
次に、サンプルC1、サンプルC2について図10を参照しながら説明する。図10は、サンプルC2の半導体部品の実装手順を説明する断面図である。サンプルC1は以下のようにして作製している。半導体パッケージ120となるBGAのバンプ130の表面には、被覆部を形成しない。すなわちバンプの表面には半田ペーストAを付着させない状態のBGAを使用する。すなわち、図10に示す半導体部品400を用いる。一方、メタルマスク印刷用に、市販の半田ペーストBを用意する。半田ペーストBは、フラックスを含んでいるが、第1バインダ160を含まない。そして配線基板240の配線250の電極に半田ペーストBを印刷する。一方、バンプ130の表面には、何も形成しない。それ以外はサンプルE1〜4と同様にして、BGAを配線基板240に実装する。このようにしてサンプルC1の半導体実装品を作製している。
次にサンプルE1〜E4と、サンプルC1、C2について行った信頼性評価の内容と結果を説明する。
サンプルE1〜サンプルE4の半導体実装品310と、サンプルC1、C2の半導体実装品について、電気的な検査を行い、良品、課題品等を分別する。そして良品について、−40℃の液槽に5分、80℃の液槽に5分交互に浸漬するヒートサイクル試験を1000サイクルまで行っている。
サンプルE1〜サンプルE4の半導体実装品310と、サンプルC1、C2の半導体実装品について、電気的な検査を行い、良品、課題品等を分別する。そして良品について、衝撃加速度1500G/0.5msの条件で、半導体実装品の回路に瞬断が発生するまでの落下回数を評価している。落下回数は最大1000回としている。
以下に、サンプルC2において発生した問題やその発生原因について、図10〜図12を参照しながら検討する。図11、図12はそれぞれ、サンプルC2において、リフローする前後の状態を示す断面図である。
次に、本実施の形態による他の例であるサンプルE5〜サンプルE10について説明する。
図13は本発明の実施の形態2による半導体部品110の断面図である。本実施の形態による半導体部品110では、被覆部140が半導体パッケージ120の実装面150に至るまで形成されている。それ以外の構成は実施の形態1と同様である。
図17は、本発明の実施の形態3による半導体部品110の要部断面図である。図18は、本実施の形態による半導体実装品310の半田接合構造を拡大して模式的に説明する断面図である。
実施の形態1で図8を参照しながら説明したように、樹脂補強部290の高さ(樹脂補強部290の配線250から最も離れた部分の高さ)は配線250を基準とする半田接合部270の高さの40%以上、100%以下であることが好ましい。しかしながら、図8の右側に示すように、半田接合部270の全周に亘って樹脂補強部290の高さが半田接合部270の高さの100%であると、信頼性に関わる他の問題を生じる場合がある。
120 半導体パッケージ
130 バンプ
140 被覆部
140a 被覆部
140b 被覆部
150 実装面
160 第1熱硬化性樹脂バインダ(第1バインダ)
160a 第1熱硬化性樹脂バインダ(第1バインダ)
160b 第1熱硬化性樹脂バインダ(第1バインダ)
170 半田粉
170a 半田粉
170b 半田粉
180 一点鎖線(先端部)
190 補助線
190a 補助線
190b 補助線
200 矢印
200a 矢印
200b 矢印
200c 矢印
200d 矢印
210 部品保持ツール
220 転写テーブル
230 第1組成物
230a 第1組成物
230b 第1組成物
240 配線基板
250 配線
260 半田ペースト
270 半田接合部
280 高さ
290 樹脂補強部
300 高さ
310 半導体実装品
320 フィル材
330 濡れ面
340 第1半田領域
350 第2半田領域
360 第1治具
370 点線
380 第2治具
390 第2組成物
400 半導体部品
410 樹脂硬化部
420 クラック
430 第2熱硬化性樹脂バインダ(第2バインダ)
440 補助被覆部
Claims (11)
- 半導体パッケージと、
表面に配線が形成され、前記半導体パッケージを実装する配線基板と、
前記半導体パッケージと前記配線とを電気的に接続する半田接合部と、
前記半田接合部の側面に形成された樹脂補強部と、を備え、
前記半田接合部は、前記配線基板よりも前記半導体パッケージの近くに形成された第1半田領域と、前記半導体パッケージよりも前記配線基板の近くに形成された第2半田領域とを有し、
前記半田接合部の一部が前記樹脂補強部から露出している、
半導体実装品。 - 前記第1半田領域は、Sn−Ag−Cu系の第1半田を主とし、
前記第2半田領域は、Sn−Bi系またはSn−Bi−Ag−Cu系の第2半田を主としている、
請求項1に記載の半導体実装品。 - 前記樹脂補強部の、前記配線から最も離れた部分の高さは、前記配線を基準とする前記半田接合部の高さの40%以上、100%以下である、
請求項1、2のいずれか一項に記載の半導体実装品。 - 前記第2半田領域がBiを含み、前記樹脂補強部は少なくとも前記第2半田領域の側面を覆っている、
請求項1から3のいずれか一項に記載の半導体実装品。 - 前記樹脂補強部は前記第2半田領域の側面を覆うとともに、前記第2半田領域の側面から前記第1半田領域の側面へと跨り、前記第1半田領域の側面を覆っている、
請求項1から4のいずれか一項に記載の半導体実装品。 - 前記樹脂補強部の一部は、前記配線基板の上から、前記半田接合部の側面を介して前記半導体パッケージの実装面までの部分を連続的に被覆している、
請求項1から5のいずれか一項に記載の半導体実装品。 - 前記半導体パッケージの周縁部で、前記半導体パッケージと前記配線基板とを繋ぐ絶縁性のフィル材をさらに備えた、
請求項1から6のいずれか一項に記載の半導体実装品。 - 実装面を有する半導体パッケージと、第1半田で構成され前記実装面に形成されたバンプとを有する半導体部品の前記バンプに、第2半田で構成された半田粉とフラックス成分とを含有する第1熱硬化性樹脂バインダを供給するステップと、
基板の表面に形成された電極に、印刷または塗布によって半田ペーストを供給するステップと、
前記第1熱硬化性樹脂バインダが前記バンプに供給された前記半導体部品を、前記半田ペーストが前記電極に供給された前記基板に搭載するステップと、
前記半導体部品を搭載した前記基板を所定の加熱プロファイルにしたがって加熱することにより、前記バンプを溶融固化し、かつ前記半田粉を溶融一体化させ、前記電極と前記半導体部品とを接続する半田接合部を形成し、かつ前記第1熱硬化性樹脂バインダを硬化させて前記半田接合部を周囲から補強するとともに、前記半田接合部の一部が露出するように樹脂補強部を形成するステップと、を備えた、
半導体実装品の製造方法。 - 前記半田ペーストが、前記半田粉と同様の半田粉と、前記フラックス成分と同様のフラックス成分とを含有する、前記第1熱硬化性樹脂バインダと同様の熱硬化性樹脂バインダで形成されている、
請求項8に記載の半導体実装品の製造方法。 - 前記第1熱硬化性樹脂バインダの中心が前記バンプの中心とずれるように、前記バンプに前記第1熱硬化性樹脂バインダを供給する、
請求項8に記載の半導体実装品の製造方法。 - 前記第1熱硬化性樹脂バインダの外周の一部が欠落した形状で、前記バンプに前記第1熱硬化性樹脂バインダを供給する、
請求項8に記載の半導体実装品の製造方法。
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