JPWO2012160880A1 - 発光素子の製造方法および発光素子 - Google Patents

発光素子の製造方法および発光素子 Download PDF

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Publication number
JPWO2012160880A1
JPWO2012160880A1 JP2013516243A JP2013516243A JPWO2012160880A1 JP WO2012160880 A1 JPWO2012160880 A1 JP WO2012160880A1 JP 2013516243 A JP2013516243 A JP 2013516243A JP 2013516243 A JP2013516243 A JP 2013516243A JP WO2012160880 A1 JPWO2012160880 A1 JP WO2012160880A1
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JP
Japan
Prior art keywords
emitting element
light emitting
single crystal
crystal substrate
vertical hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013516243A
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English (en)
Japanese (ja)
Inventor
英雄 会田
英雄 会田
奈津子 青田
奈津子 青田
秀俊 武田
秀俊 武田
慶司 本庄
慶司 本庄
仁志 星野
仁志 星野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Namiki Precision Jewel Co Ltd
Disco Corp
Adamant Namiki Precision Jewel Co Ltd
Original Assignee
Namiki Precision Jewel Co Ltd
Disco Corp
Adamant Namiki Precision Jewel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Namiki Precision Jewel Co Ltd, Disco Corp, Adamant Namiki Precision Jewel Co Ltd filed Critical Namiki Precision Jewel Co Ltd
Publication of JPWO2012160880A1 publication Critical patent/JPWO2012160880A1/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP2013516243A 2011-05-23 2012-04-03 発光素子の製造方法および発光素子 Pending JPWO2012160880A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011114636 2011-05-23
JP2011114636 2011-05-23
PCT/JP2012/059067 WO2012160880A1 (ja) 2011-05-23 2012-04-03 発光素子の製造方法および発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015113820A Division JP6023270B2 (ja) 2011-05-23 2015-06-04 発光素子の製造方法および発光素子

Publications (1)

Publication Number Publication Date
JPWO2012160880A1 true JPWO2012160880A1 (ja) 2014-07-31

Family

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Family Applications (2)

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JP2013516243A Pending JPWO2012160880A1 (ja) 2011-05-23 2012-04-03 発光素子の製造方法および発光素子
JP2015113820A Expired - Fee Related JP6023270B2 (ja) 2011-05-23 2015-06-04 発光素子の製造方法および発光素子

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Country Status (7)

Country Link
US (1) US9065032B2 (enExample)
EP (1) EP2717335A4 (enExample)
JP (2) JPWO2012160880A1 (enExample)
KR (1) KR101516609B1 (enExample)
CN (1) CN103548158B (enExample)
TW (1) TWI495148B (enExample)
WO (1) WO2012160880A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150114486A (ko) * 2013-01-30 2015-10-12 프라운호퍼-게젤샤프트 추르 푀르데룽 데어 안제반텐 포르슝 에 파우 에피택셜 반도체층을 제조하기 위한 방법
FR3011383B1 (fr) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes
JP6704699B2 (ja) * 2015-09-11 2020-06-03 アルパッド株式会社 半導体発光素子及びその製造方法
CN108732652A (zh) * 2018-05-25 2018-11-02 厦门大学 一种氮化物光子晶体及其制备方法
DE102020114195A1 (de) * 2020-05-27 2021-12-02 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zum Einbringen einer Ausnehmung in ein Substrat

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1084167A (ja) * 1996-06-17 1998-03-31 Toshiba Corp 窒化ガリウム系化合物半導体発光デバイス及びその製造方法
JPH1145892A (ja) * 1997-05-28 1999-02-16 Sony Corp 半導体装置およびその製造方法
JP2002210730A (ja) * 2001-01-19 2002-07-30 Tokyo Instruments Inc レーザ支援加工方法
JP2004272014A (ja) * 2003-03-10 2004-09-30 Seiko Epson Corp 光通信モジュールの製造方法、光通信モジュール、及び電子機器
JP2005074663A (ja) * 2003-08-28 2005-03-24 Seiko Epson Corp 単結晶基板の加工方法
WO2007089077A1 (en) * 2006-02-01 2007-08-09 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device and method of manufacturing the same
JP2008021887A (ja) * 2006-07-14 2008-01-31 Eudyna Devices Inc 発光素子の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883929A (ja) 1994-09-14 1996-03-26 Rohm Co Ltd 半導体発光素子、およびその製造方法
JP3706448B2 (ja) 1996-12-06 2005-10-12 ローム株式会社 半導体発光素子
JPH10308640A (ja) * 1997-05-07 1998-11-17 Matsushita Electric Ind Co Ltd 圧電デバイスの製造方法
US6239033B1 (en) * 1998-05-28 2001-05-29 Sony Corporation Manufacturing method of semiconductor device
JP3362836B2 (ja) * 1997-12-26 2003-01-07 日亜化学工業株式会社 光半導体素子の製造方法
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
US7276742B2 (en) * 2001-11-19 2007-10-02 Sanyo Electric Co., Ltd. Compound semiconductor light emitting device and its manufacturing method
JP2004104100A (ja) 2002-09-10 2004-04-02 Arima Optoelectronics Corp 発光ダイオード及びその製造方法
JP2004288839A (ja) 2003-03-20 2004-10-14 Fujikura Ltd 反応性イオンエッチング装置
US7202181B2 (en) * 2004-03-26 2007-04-10 Cres, Inc. Etching of substrates of light emitting devices
JP4766966B2 (ja) 2005-09-07 2011-09-07 京セラ株式会社 発光素子
KR100716790B1 (ko) 2005-09-26 2007-05-14 삼성전기주식회사 질화갈륨계 반도체 발광소자 및 그 제조방법
JP5386177B2 (ja) * 2006-01-10 2014-01-15 クリー インコーポレイテッド 炭化珪素ディンプル基板
JP5232375B2 (ja) * 2006-10-13 2013-07-10 アイシン精機株式会社 半導体発光素子の分離方法
KR101364718B1 (ko) * 2007-02-15 2014-02-19 서울바이오시스 주식회사 발광 소자 및 그 제조 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1084167A (ja) * 1996-06-17 1998-03-31 Toshiba Corp 窒化ガリウム系化合物半導体発光デバイス及びその製造方法
JPH1145892A (ja) * 1997-05-28 1999-02-16 Sony Corp 半導体装置およびその製造方法
JP2002210730A (ja) * 2001-01-19 2002-07-30 Tokyo Instruments Inc レーザ支援加工方法
JP2004272014A (ja) * 2003-03-10 2004-09-30 Seiko Epson Corp 光通信モジュールの製造方法、光通信モジュール、及び電子機器
JP2005074663A (ja) * 2003-08-28 2005-03-24 Seiko Epson Corp 単結晶基板の加工方法
WO2007089077A1 (en) * 2006-02-01 2007-08-09 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device and method of manufacturing the same
JP2008021887A (ja) * 2006-07-14 2008-01-31 Eudyna Devices Inc 発光素子の製造方法

Also Published As

Publication number Publication date
JP2015173293A (ja) 2015-10-01
EP2717335A1 (en) 2014-04-09
US9065032B2 (en) 2015-06-23
KR101516609B1 (ko) 2015-05-04
US20140217458A1 (en) 2014-08-07
EP2717335A4 (en) 2014-12-03
WO2012160880A1 (ja) 2012-11-29
CN103548158B (zh) 2016-10-19
TWI495148B (zh) 2015-08-01
TW201251106A (en) 2012-12-16
JP6023270B2 (ja) 2016-11-09
KR20140006986A (ko) 2014-01-16
CN103548158A (zh) 2014-01-29

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