JP2008021887A - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
- Publication number
- JP2008021887A JP2008021887A JP2006193512A JP2006193512A JP2008021887A JP 2008021887 A JP2008021887 A JP 2008021887A JP 2006193512 A JP2006193512 A JP 2006193512A JP 2006193512 A JP2006193512 A JP 2006193512A JP 2008021887 A JP2008021887 A JP 2008021887A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- substrate
- emitting element
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000002344 surface layer Substances 0.000 claims abstract description 16
- 238000000926 separation method Methods 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 43
- 239000010980 sapphire Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 41
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 abstract description 45
- 230000007423 decrease Effects 0.000 abstract description 5
- 238000005422 blasting Methods 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005253 cladding Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000005337 ground glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Dicing (AREA)
Abstract
【解決手段】本発明は、基板(10)上に形成された発光素子を分離するための分離領域にレーザ光を照射する工程と、基板(10)を分離領域で物理的に分離する工程と、基板(10)を分離する工程により露出された基板の少なくとも1つの側面の表面層を除去する工程と、を有することを特徴とする発光素子の製造方法である。
【選択図】図7
Description
20 溝
22 変質層
30 発光部
36 表面層
38 研磨剤
39 プラズマ
40 拡張シート
42 サファイア板
45 保護膜
S1 発光面
S2、S3 側面
Claims (6)
- 基板上に形成された発光素子を分離するための分離領域にレーザ光を照射する工程と、
前記基板を前記分離領域で物理的に分離する工程と、
前記基板を分離する工程により露出された前記基板の少なくとも1つの側面の表面層を除去する工程と、を有することを特徴とする発光素子の製造方法。 - 前記基板はサファイア基板であることを特徴とする請求項1記載の発光素子の製造方法。
- 前記表面層を除去する工程は、前記露出された基板の全側面の表面層を除去する工程であることを特徴とする請求項1記載の発光素子の製造方法。
- 前記表面層を除去する工程は、ブラスト法を用いることを特徴とする請求項1記載の発光素子の製造方法。
- 前記表面層を除去する工程は、エッチング法を用いることを特徴とする請求項1記載の発光素子の製造方法。
- 前記基板を分離する工程の前に、前記基板の前記レーザを照射した側の面に保護膜を形成する工程を有することを特徴とする請求項1記載の発光素子の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006193512A JP4142699B2 (ja) | 2006-07-14 | 2006-07-14 | 発光素子の製造方法 |
EP07111687A EP1879237A2 (en) | 2006-07-14 | 2007-07-03 | Manufacturing method of light-emitting element |
TW096125222A TW200812123A (en) | 2006-07-14 | 2007-07-11 | Manufacturing method of light-emitting element |
CNA2007101362512A CN101106103A (zh) | 2006-07-14 | 2007-07-12 | 发光元件的制造方法 |
US11/826,085 US7745240B2 (en) | 2006-07-14 | 2007-07-12 | Manufacturing method of light-emitting element with surface layer removal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006193512A JP4142699B2 (ja) | 2006-07-14 | 2006-07-14 | 発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008021887A true JP2008021887A (ja) | 2008-01-31 |
JP4142699B2 JP4142699B2 (ja) | 2008-09-03 |
Family
ID=38476979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006193512A Expired - Fee Related JP4142699B2 (ja) | 2006-07-14 | 2006-07-14 | 発光素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7745240B2 (ja) |
EP (1) | EP1879237A2 (ja) |
JP (1) | JP4142699B2 (ja) |
CN (1) | CN101106103A (ja) |
TW (1) | TW200812123A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010045288A (ja) * | 2008-08-18 | 2010-02-25 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
JP2011222806A (ja) * | 2010-04-12 | 2011-11-04 | Disco Abrasive Syst Ltd | 光デバイスウエーハの加工方法 |
JPWO2012160880A1 (ja) * | 2011-05-23 | 2014-07-31 | 並木精密宝石株式会社 | 発光素子の製造方法および発光素子 |
JP2015170712A (ja) * | 2014-03-06 | 2015-09-28 | 旭化成株式会社 | 窒化物半導体素子、AlNxO1.5y(0<(x+y)<1、0<x<1、0≦y<1)の生成方法、窒化物半導体素子の製造方法、および窒化物半導体素子の駆動確認方法 |
JP2015185744A (ja) * | 2014-03-25 | 2015-10-22 | 旭化成株式会社 | 半導体発光素子の製造方法および半導体発光素子 |
JP2016035976A (ja) * | 2014-08-04 | 2016-03-17 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016143735A (ja) * | 2015-01-30 | 2016-08-08 | 日亜化学工業株式会社 | 発光装置の製造方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009032970A (ja) * | 2007-07-27 | 2009-02-12 | Rohm Co Ltd | 窒化物半導体素子の製造方法 |
TWI470823B (zh) | 2009-02-11 | 2015-01-21 | Epistar Corp | 發光元件及其製造方法 |
US8878210B2 (en) | 2009-07-01 | 2014-11-04 | Epistar Corporation | Light-emitting device |
TWI488334B (zh) | 2009-07-01 | 2015-06-11 | Epistar Corp | 發光元件及其製造方法 |
CN101958374B (zh) * | 2009-07-17 | 2014-06-11 | 晶元光电股份有限公司 | 发光元件及其制造方法 |
CN101814565A (zh) * | 2010-03-02 | 2010-08-25 | 上海蓝光科技有限公司 | 一种发光二极管芯片的结构及其制造方法 |
JP5495876B2 (ja) * | 2010-03-23 | 2014-05-21 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
JP5770446B2 (ja) * | 2010-09-30 | 2015-08-26 | 株式会社ディスコ | 分割方法 |
JP2012089709A (ja) * | 2010-10-20 | 2012-05-10 | Disco Abrasive Syst Ltd | ワークの分割方法 |
US20130234149A1 (en) * | 2012-03-09 | 2013-09-12 | Electro Scientific Industries, Inc. | Sidewall texturing of light emitting diode structures |
KR20130117474A (ko) * | 2012-04-18 | 2013-10-28 | 서울바이오시스 주식회사 | 배면에 패턴을 갖는 기판을 구비하는 발광다이오드 및 그의 제조방법 |
CN102962773A (zh) * | 2012-09-21 | 2013-03-13 | 沈李豪 | 去除led衬底的方法及以其方法制得的led芯片 |
CN102861994B (zh) * | 2012-09-28 | 2015-04-01 | 合肥彩虹蓝光科技有限公司 | 一种发光原件的切割方法 |
US9601437B2 (en) * | 2014-09-09 | 2017-03-21 | Nxp B.V. | Plasma etching and stealth dicing laser process |
US10938372B2 (en) | 2018-05-17 | 2021-03-02 | Taiyo Yuden Co., Ltd. | Acoustic wave resonator, acoustic wave device, and filter |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3550651B2 (ja) | 1999-09-14 | 2004-08-04 | 日本電気株式会社 | トランスコードの高速化方法及び装置 |
JP2001274458A (ja) | 2000-03-27 | 2001-10-05 | Toshiba Electronic Engineering Corp | 半導体発光装置及びその製造方法 |
JP2002368263A (ja) * | 2001-06-06 | 2002-12-20 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP2004165226A (ja) | 2002-11-08 | 2004-06-10 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子の製造方法 |
JP4669216B2 (ja) | 2003-11-25 | 2011-04-13 | パナソニック電工株式会社 | 半導体発光素子の製造方法 |
JP2006086516A (ja) | 2004-08-20 | 2006-03-30 | Showa Denko Kk | 半導体発光素子の製造方法 |
JP4901117B2 (ja) | 2005-03-04 | 2012-03-21 | 株式会社東芝 | 半導体発光素子及び半導体発光素子の製造方法 |
-
2006
- 2006-07-14 JP JP2006193512A patent/JP4142699B2/ja not_active Expired - Fee Related
-
2007
- 2007-07-03 EP EP07111687A patent/EP1879237A2/en not_active Withdrawn
- 2007-07-11 TW TW096125222A patent/TW200812123A/zh unknown
- 2007-07-12 CN CNA2007101362512A patent/CN101106103A/zh active Pending
- 2007-07-12 US US11/826,085 patent/US7745240B2/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010045288A (ja) * | 2008-08-18 | 2010-02-25 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
WO2010021212A1 (ja) * | 2008-08-18 | 2010-02-25 | 信越半導体株式会社 | 発光素子及びその製造方法 |
JP2011222806A (ja) * | 2010-04-12 | 2011-11-04 | Disco Abrasive Syst Ltd | 光デバイスウエーハの加工方法 |
JPWO2012160880A1 (ja) * | 2011-05-23 | 2014-07-31 | 並木精密宝石株式会社 | 発光素子の製造方法および発光素子 |
US9065032B2 (en) | 2011-05-23 | 2015-06-23 | Namiki Seimitsu Houseki Kabushikikaisha | Method for manufacturing light-emitting element, and light-emitting element |
JP2015170712A (ja) * | 2014-03-06 | 2015-09-28 | 旭化成株式会社 | 窒化物半導体素子、AlNxO1.5y(0<(x+y)<1、0<x<1、0≦y<1)の生成方法、窒化物半導体素子の製造方法、および窒化物半導体素子の駆動確認方法 |
JP2015185744A (ja) * | 2014-03-25 | 2015-10-22 | 旭化成株式会社 | 半導体発光素子の製造方法および半導体発光素子 |
JP2016035976A (ja) * | 2014-08-04 | 2016-03-17 | 株式会社ディスコ | ウエーハの加工方法 |
JP2016143735A (ja) * | 2015-01-30 | 2016-08-08 | 日亜化学工業株式会社 | 発光装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4142699B2 (ja) | 2008-09-03 |
US20080026497A1 (en) | 2008-01-31 |
TW200812123A (en) | 2008-03-01 |
CN101106103A (zh) | 2008-01-16 |
EP1879237A2 (en) | 2008-01-16 |
US7745240B2 (en) | 2010-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4142699B2 (ja) | 発光素子の製造方法 | |
JP4753628B2 (ja) | 化合物半導体素子ウェハーの製造方法 | |
JP3904585B2 (ja) | 半導体素子の製造方法 | |
JP2006086516A (ja) | 半導体発光素子の製造方法 | |
KR20150089931A (ko) | 광디바이스 및 광디바이스의 가공 방법 | |
JP2009032970A (ja) | 窒化物半導体素子の製造方法 | |
JP2001284292A (ja) | 半導体ウエハーのチップ分割方法 | |
WO2009002129A2 (en) | Semiconductor light emitting device and method of manufacturing the same | |
CN108461396B (zh) | 光器件晶片的加工方法 | |
JP2003151921A (ja) | 化合物半導体とその製造方法 | |
JP2010056485A (ja) | 発光素子、発光装置およびサファイア基板の加工方法 | |
JP4992220B2 (ja) | 半導体素子の製造方法 | |
JP2006245066A (ja) | 発光ダイオード及び発光ダイオードの製造方法 | |
JP5988600B2 (ja) | サファイアウェーハの分割方法 | |
JP2005158971A (ja) | 半導体発光素子の製造方法およびその半導体発光素子 | |
JPH05166923A (ja) | 窒化ガリウム系化合物半導体ウエハーの切断方法 | |
JP2006203251A (ja) | 半導体素子の製造方法 | |
JP2001284290A (ja) | 半導体ウエハーのチップ分割方法 | |
JP2005286098A (ja) | Iii族窒化物系化合物半導体素子のおよびその製造方法 | |
KR102501898B1 (ko) | GaN 기판의 분단 방법 | |
JP2009032795A (ja) | 窒化物半導体発光素子の製造方法 | |
JP2007258321A (ja) | 発光素子の製造方法 | |
KR20150077212A (ko) | 광 디바이스 웨이퍼의 분할 방법 | |
KR101140660B1 (ko) | 3족 질화물 반도체 발광소자의 제조방법 | |
JP2013258231A (ja) | 光デバイスの加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080411 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080610 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080612 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110620 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |